K
Konstantin S. Novoselov
Researcher at University of Manchester
Publications - 102
Citations - 15096
Konstantin S. Novoselov is an academic researcher from University of Manchester. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 47, co-authored 102 publications receiving 12517 citations. Previous affiliations of Konstantin S. Novoselov include National University of Singapore.
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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Andrea C. Ferrari,Francesco Bonaccorso,Francesco Bonaccorso,Vladimir I. Fal'ko,Konstantin S. Novoselov,Stephan Roche,Peter Bøggild,Stefano Borini,Frank H. L. Koppens,Vincenzo Palermo,Nicola M. Pugno,Nicola M. Pugno,Nicola M. Pugno,Jose A. Garrido,Roman Sordan,Alberto Bianco,Laura Ballerini,Maurizio Prato,Elefterios Lidorikis,Jani Kivioja,Claudio Marinelli,Tapani Ryhänen,Alberto F. Morpurgo,Jonathan N. Coleman,Valeria Nicolosi,Luigi Colombo,Albert Fert,Albert Fert,Mar García-Hernández,Adrian Bachtold,Grégory F. Schneider,Francisco Guinea,Cees Dekker,Matteo Barbone,Zhipei Sun,Costas Galiotis,Alexander N. Grigorenko,Gerasimos Konstantatos,Andras Kis,Mikhail I. Katsnelson,Lieven M. K. Vandersypen,A. Loiseau,Vittorio Morandi,Daniel Neumaier,Emanuele Treossi,Vittorio Pellegrini,Vittorio Pellegrini,Marco Polini,Alessandro Tredicucci,Gareth M. Williams,Byung Hee Hong,Jong Hyun Ahn,Jong Min Kim,Herbert Zirath,Bart J. van Wees,Herre S. J. van der Zant,Luigi Occhipinti,Andrea di Matteo,Ian A. Kinloch,Thomas Seyller,Etienne Quesnel,Xinliang Feng,K.B.K. Teo,Nalin Rupesinghe,Pertti Hakonen,Simon R. T. Neil,Quentin Tannock,Tomas Löfwander,Jari M. Kinaret +68 more
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
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Vertical field-effect transistor based on graphene?WS2 heterostructures for flexible and transparent electronics
Thanasis Georgiou,Rashid Jalil,Branson D. Belle,L. Britnell,Roman V. Gorbachev,Sergey V. Morozov,Yong-Jin Kim,Yong-Jin Kim,Ali Gholinia,Sarah J. Haigh,Oleg Makarovsky,Laurence Eaves,Laurence Eaves,Leonid Ponomarenko,Andre K. Geim,Konstantin S. Novoselov,Artem Mishchenko +16 more
TL;DR: A new generation of field-effect vertical tunnelling transistors where two-dimensional tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or chemical vapour deposition-grown graphene are described.
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High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Denis A. Bandurin,Anastasia V. Tyurnina,Anastasia V. Tyurnina,Geliang Yu,Artem Mishchenko,Viktor Zólyomi,Sergey V. Morozov,Roshan Krishna Kumar,Roman V. Gorbachev,Zakhar R. Kudrynskyi,Sergio Pezzini,Zakhar D. Kovalyuk,Uli Zeitler,Konstantin S. Novoselov,Amalia Patanè,Laurence Eaves,Irina V. Grigorieva,Vladimir I. Fal'ko,Andre K. Geim,Yang Cao +19 more
TL;DR: Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.
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Commensurate-incommensurate transition in graphene on hexagonal boron nitride
Colin R. Woods,L. Britnell,Axel Eckmann,Ruisong Ma,Jianchen Lu,Haiming Guo,Xiao Lin,Geliang Yu,Yang Cao,Roman V. Gorbachev,Andrey V. Kretinin,Jaesung Park,Jaesung Park,Leonid Ponomarenko,Mikhail I. Katsnelson,Yu. N. Gornostyrev,Kenji Watanabe,Takashi Taniguchi,Cinzia Casiraghi,Hong-Jun Gao,Andre K. Geim,Konstantin S. Novoselov +21 more
TL;DR: In this article, the authors reported a commensurate-incommensurate transition for graphene on top of hexagonal boron nitride (hBN), where areas with matching lattice constants are separated by domain walls that accumulate the generated strain.
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Interfacial stress transfer in a graphene monolayer nanocomposite
TL;DR: It is demonstrated from stress-induced Raman bands shifts that stress can be transferred from a polymer matrix to a graphene monolayer in a model nanocomposite.