M
M. Hanlon
Researcher at University of Liverpool
Publications - 8
Citations - 628
M. Hanlon is an academic researcher from University of Liverpool. The author has contributed to research in topics: Silicon & Radiation hardening. The author has an hindex of 6, co-authored 8 publications receiving 605 citations.
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Journal ArticleDOI
Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration
G. Lindström,M. Ahmed,Sebastiano Albergo,Phillip Allport,D.F. Anderson,Ladislav Andricek,M. Angarano,Vincenzo Augelli,N. Bacchetta,P. Bartalini,Richard Bates,U. Biggeri,G. M. Bilei,Dario Bisello,D. Boemi,E. Borchi,T. Botila,T. J. Brodbeck,Mara Bruzzi,T. Budzyński,P. Burger,Francesca Campabadal,Gianluigi Casse,E. Catacchini,A. Chilingarov,Paolo Ciampolini,Vladimir Cindro,M. J. Costa,Donato Creanza,Paul Clauws,C. Da Via,Gavin Davies,W. De Boer,Roberto Dell'Orso,M. De Palma,B. Dezillie,V. K. Eremin,O. Evrard,Giorgio Fallica,Georgios Fanourakis,H. Feick,Ettore Focardi,Luis Fonseca,E. Fretwurst,J. Fuster,K. Gabathuler,Maurice Glaser,Piotr Grabiec,E. Grigoriev,Geoffrey Hall,M. Hanlon,F. Hauler,S. Heising,A. Holmes-Siedle,Roland Horisberger,G. Hughes,Mika Huhtinen,I. Ilyashenko,Andrew Ivanov,B.K. Jones,L. Jungermann,A. Kaminsky,Z. Kohout,Gregor Kramberger,M Kuhnke,Simon Kwan,F. Lemeilleur,Claude Leroy,M. Letheren,Z. Li,Teresa Ligonzo,Vladimír Linhart,P.G. Litovchenko,Demetrios Loukas,Manuel Lozano,Z. Luczynski,Gerhard Lutz,B. C. MacEvoy,S. Manolopoulos,A. Markou,C Martinez,Alberto Messineo,M. Mikuž,Michael Moll,E. Nossarzewska,G. Ottaviani,Val O'Shea,G. Parrini,Daniele Passeri,D. Petre,A. Pickford,Ioana Pintilie,Lucian Pintilie,Stanislav Pospisil,Renato Potenza,C. Raine,Joan Marc Rafi,P. N. Ratoff,Robert Richter,Petra Riedler,Shaun Roe,P. Roy,Arie Ruzin,A.I. Ryazanov,A. Santocchia,Luigi Schiavulli,P. Sicho,I. Siotis,T. J. Sloan,W. Slysz,Kristine M. Smith,M. Solanky,B. Sopko,K. Stolze,B. Sundby Avset,B. G. Svensson,C. Tivarus,Guido Tonelli,Alessia Tricomi,Spyros Tzamarias,Giusy Valvo,A. Vasilescu,A. Vayaki,E. M. Verbitskaya,Piero Giorgio Verdini,Vaclav Vrba,Stephen Watts,Eicke R. Weber,M. Wegrzecki,I. Węgrzecka,P. Weilhammer,R. Wheadon,C.D. Wilburn,I. Wilhelm,R. Wunstorf,J. Wüstenfeld,J. Wyss,K. Zankel,P. Zabierowski,D. Žontar +139 more
TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.
Journal ArticleDOI
Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration
G. Lindström,M. Ahmed,Sebastiano Albergo,Phillip Allport,D.F. Anderson,Ladislav Andricek,M. Angarano,Vincenzo Augelli,N. Bacchetta,P. Bartalini,Richard Bates,U. Biggeri,G. M. Bilei,Dario Bisello,D. Boemi,E. Borchi,T. Botila,T. J. Brodbeck,Mara Bruzzi,T. Budzyński,P. Burger,Francesca Campabadal,Gianluigi Casse,E. Catacchini,A. Chilingarov,Paolo Ciampolini,Vladimir Cindro,M. J. Costa,Donato Creanza,Paul Clauws,C. Da Via,Gavin Davies,W. De Boer,Roberto Dell'Orso,M. De Palma,B. Dezillie,V. K. Eremin,O. Evrard,Giorgio Fallica,Georgios Fanourakis,H. Feick,Ettore Focardi,Luis Fonseca,Eckhart Fretwurst,J. Fuster,K. Gabathuler,Maurice Glaser,Piotr Grabiec,E. Grigoriev,Geoffrey Hall,M. Hanlon,F. Hauler,S. Heising,A. Holmes-Siedle,Roland Horisberger,G. Hughes,Mika Huhtinen,I. Ilyashenko,Andrew Ivanov,B.K. Jones,L. Jungermann,A. Kaminsky,Z. Kohout,Gregor Kramberger,M Kuhnke,Simon Kwan,F. Lemeilleur,C. Leroy,M. Letheren,Z. Li,Teresa Ligonzo,Vladimír Linhart,P.G. Litovchenko,Demetrios Loukas,Manuel Lozano,Z. Luczynski,G. Lutz,B. C. MacEvoy,S. Manolopoulos,A. Markou,C Martinez,Alberto Messineo,M. Miku,Michael Moll,E. Nossarzewska,G. Ottaviani,Val O'Shea,G. Parrini,Daniele Passeri,D. Petre,A. Pickford,Ioana Pintilie,Lucian Pintilie,Stanislav Pospisil,Renato Potenza,V. Radicci,C. Raine,Joan Marc Rafi,P. N. Ratoff,Robert Richter,Petra Riedler,Shaun Roe,P. Roy,Arie Ruzin,A.I. Ryazanov,A. Santocchia,Luigi Schiavulli,P. Sicho,I. Siotis,T. J. Sloan,W. Slysz,Kevin M. Smith,M. Solanky,B. Sopko,K. Stolze,B. Sundby Avset,B. G. Svensson,C. Tivarus,Guido Tonelli,Alessia Tricomi,S. Tzamarias,Giusy Valvo,A. Vasilescu,A. Vayaki,E. M. Verbitskaya,Piero Giorgio Verdini,Vaclav Vrba,Stephen Watts,Eicke R. Weber,M. Wegrzecki,I. Węgrzecka,P. Weilhammer,R. Wheadon,C.D. Wilburn,I. Wilhelm,R. Wunstorf,J. Wüstenfeld,J. Wyss,K. Zankel,P. Zabierowski,D. Zontar +140 more
TL;DR: In this paper, the authors summarized the final results obtained by the RD48 collaboration, focusing on the more practical aspects directly relevant for LHC applications, including the changes of the effective doping concentration (depletion voltage) and the dependence of radiation effects on fluence, temperature and operational time.
Journal ArticleDOI
First results on the charge collection properties of segmented detectors made with p-type bulk silicon
TL;DR: In this paper, a large area capacitively coupled 80mm pitch detectors using polysilicon bias resistors have been fabricated on p-type substrates (n-in-p diode structure) and irradiated with 24 GeV/c protons to an integrated fluence of 3 10 14 cm 2 and kept for 7 days at 251C to reach the broad minimum of the annealing curve.
Journal ArticleDOI
Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon
TL;DR: In this paper, the degradation of the electrical properties of silicon detectors exposed to 24 GeV/c protons were studied using pad diodes made from different silicon materials, including high-grade p-type and n-type substrates.
Journal ArticleDOI
Radiation tests of ATLAS full-sized n-in-n prototype detectors
Phillip Allport,R. J. Apsimon,C. Becker,J.P. Bizzell,R. Bonino,P.S.L. Booth,B. Boulter,A. A. Carter,J. R. Carter,Allan G Clark,C. Couyoumtzelis,M. J. Goodrick,C. Green,A. Greenall,M. Hanlon,John Hill,J. N. Jackson,Tim Jones,R. Kowalewski,D. Macina,S. Marti i Garcia,D. J. Munday,D. Newman-Coburn,E. Orme,Val O'Shea,E. Perrin,J.D. Richardson,Petra Riedler,D. Robinson,Shaun Roe,N. A. Smith,R. Thüne,P.R. Turner,M. Tyndel,B. Vuaridel,M. Wormald,R. Wunstorf,J. Wüstenfeld,K.H. Wyllie +38 more
TL;DR: The ATLAS inner detector has been used in the CERN PS beam for runs of two weeks giving an integrated dose over the full surface of 2×10 14 p/cm 2, which corresponds to the highest charged hadron fluence expected in 10 years of operation in ATLAS.