J
J. Wüstenfeld
Researcher at Technical University of Dortmund
Publications - 11
Citations - 832
J. Wüstenfeld is an academic researcher from Technical University of Dortmund. The author has contributed to research in topics: Silicon & Radiation hardening. The author has an hindex of 8, co-authored 11 publications receiving 804 citations.
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Journal ArticleDOI
Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration
G. Lindström,M. Ahmed,Sebastiano Albergo,Phillip Allport,D.F. Anderson,Ladislav Andricek,M. Angarano,Vincenzo Augelli,N. Bacchetta,P. Bartalini,Richard Bates,U. Biggeri,G. M. Bilei,Dario Bisello,D. Boemi,E. Borchi,T. Botila,T. J. Brodbeck,Mara Bruzzi,T. Budzyński,P. Burger,Francesca Campabadal,Gianluigi Casse,E. Catacchini,A. Chilingarov,Paolo Ciampolini,Vladimir Cindro,M. J. Costa,Donato Creanza,Paul Clauws,C. Da Via,Gavin Davies,W. De Boer,Roberto Dell'Orso,M. De Palma,B. Dezillie,V. K. Eremin,O. Evrard,Giorgio Fallica,Georgios Fanourakis,H. Feick,Ettore Focardi,Luis Fonseca,E. Fretwurst,J. Fuster,K. Gabathuler,Maurice Glaser,Piotr Grabiec,E. Grigoriev,Geoffrey Hall,M. Hanlon,F. Hauler,S. Heising,A. Holmes-Siedle,Roland Horisberger,G. Hughes,Mika Huhtinen,I. Ilyashenko,Andrew Ivanov,B.K. Jones,L. Jungermann,A. Kaminsky,Z. Kohout,Gregor Kramberger,M Kuhnke,Simon Kwan,F. Lemeilleur,Claude Leroy,M. Letheren,Z. Li,Teresa Ligonzo,Vladimír Linhart,P.G. Litovchenko,Demetrios Loukas,Manuel Lozano,Z. Luczynski,Gerhard Lutz,B. C. MacEvoy,S. Manolopoulos,A. Markou,C Martinez,Alberto Messineo,M. Mikuž,Michael Moll,E. Nossarzewska,G. Ottaviani,Val O'Shea,G. Parrini,Daniele Passeri,D. Petre,A. Pickford,Ioana Pintilie,Lucian Pintilie,Stanislav Pospisil,Renato Potenza,C. Raine,Joan Marc Rafi,P. N. Ratoff,Robert Richter,Petra Riedler,Shaun Roe,P. Roy,Arie Ruzin,A.I. Ryazanov,A. Santocchia,Luigi Schiavulli,P. Sicho,I. Siotis,T. J. Sloan,W. Slysz,Kristine M. Smith,M. Solanky,B. Sopko,K. Stolze,B. Sundby Avset,B. G. Svensson,C. Tivarus,Guido Tonelli,Alessia Tricomi,Spyros Tzamarias,Giusy Valvo,A. Vasilescu,A. Vayaki,E. M. Verbitskaya,Piero Giorgio Verdini,Vaclav Vrba,Stephen Watts,Eicke R. Weber,M. Wegrzecki,I. Węgrzecka,P. Weilhammer,R. Wheadon,C.D. Wilburn,I. Wilhelm,R. Wunstorf,J. Wüstenfeld,J. Wyss,K. Zankel,P. Zabierowski,D. Žontar +139 more
TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.
Journal ArticleDOI
Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration
G. Lindström,M. Ahmed,Sebastiano Albergo,Phillip Allport,D.F. Anderson,Ladislav Andricek,M. Angarano,Vincenzo Augelli,N. Bacchetta,P. Bartalini,Richard Bates,U. Biggeri,G. M. Bilei,Dario Bisello,D. Boemi,E. Borchi,T. Botila,T. J. Brodbeck,Mara Bruzzi,T. Budzyński,P. Burger,Francesca Campabadal,Gianluigi Casse,E. Catacchini,A. Chilingarov,Paolo Ciampolini,Vladimir Cindro,M. J. Costa,Donato Creanza,Paul Clauws,C. Da Via,Gavin Davies,W. De Boer,Roberto Dell'Orso,M. De Palma,B. Dezillie,V. K. Eremin,O. Evrard,Giorgio Fallica,Georgios Fanourakis,H. Feick,Ettore Focardi,Luis Fonseca,Eckhart Fretwurst,J. Fuster,K. Gabathuler,Maurice Glaser,Piotr Grabiec,E. Grigoriev,Geoffrey Hall,M. Hanlon,F. Hauler,S. Heising,A. Holmes-Siedle,Roland Horisberger,G. Hughes,Mika Huhtinen,I. Ilyashenko,Andrew Ivanov,B.K. Jones,L. Jungermann,A. Kaminsky,Z. Kohout,Gregor Kramberger,M Kuhnke,Simon Kwan,F. Lemeilleur,C. Leroy,M. Letheren,Z. Li,Teresa Ligonzo,Vladimír Linhart,P.G. Litovchenko,Demetrios Loukas,Manuel Lozano,Z. Luczynski,G. Lutz,B. C. MacEvoy,S. Manolopoulos,A. Markou,C Martinez,Alberto Messineo,M. Miku,Michael Moll,E. Nossarzewska,G. Ottaviani,Val O'Shea,G. Parrini,Daniele Passeri,D. Petre,A. Pickford,Ioana Pintilie,Lucian Pintilie,Stanislav Pospisil,Renato Potenza,V. Radicci,C. Raine,Joan Marc Rafi,P. N. Ratoff,Robert Richter,Petra Riedler,Shaun Roe,P. Roy,Arie Ruzin,A.I. Ryazanov,A. Santocchia,Luigi Schiavulli,P. Sicho,I. Siotis,T. J. Sloan,W. Slysz,Kevin M. Smith,M. Solanky,B. Sopko,K. Stolze,B. Sundby Avset,B. G. Svensson,C. Tivarus,Guido Tonelli,Alessia Tricomi,S. Tzamarias,Giusy Valvo,A. Vasilescu,A. Vayaki,E. M. Verbitskaya,Piero Giorgio Verdini,Vaclav Vrba,Stephen Watts,Eicke R. Weber,M. Wegrzecki,I. Węgrzecka,P. Weilhammer,R. Wheadon,C.D. Wilburn,I. Wilhelm,R. Wunstorf,J. Wüstenfeld,J. Wyss,K. Zankel,P. Zabierowski,D. Zontar +140 more
TL;DR: In this paper, the authors summarized the final results obtained by the RD48 collaboration, focusing on the more practical aspects directly relevant for LHC applications, including the changes of the effective doping concentration (depletion voltage) and the dependence of radiation effects on fluence, temperature and operational time.
ATLAS pixel detector: Technical design report
Alam,Christoph Geich-Gimbel,R. Marchesini,J. Drees,C Troncon,Kevin Einsweiler,B. Van Eijk,Massimo Caccia,C. Del Papa,Sally Seidel,J.D. Richardson,S.C. Timm,Alessandra Ciocio,M. Dameri,William Trischuk,F. Pengg,Sonia González,D. Calvet,G. Meddeler,O. Milgrome,A.A. Grillo,D. Cauz,Claudia Gemme,G. Vegni,G. Zizka,Horst Severini,I. M. Gregor,I. Valin,R. Potheau,Richard C. Jared,Susanne Kersten,S. Pier,J. Snow,K. Neriyanuri,L. Tomášek,D. P. Stoker,B. Sopko,B. Schofer,G. Sette,Guido Gagliardi,Claus Gössling,F. Hügging,J. Thadome,M. Aleppo,Rupert Leitner,Paolo Musico,P. Sicho,W. Ockenfels,A. De Angelis,J. Emes,Giovanni Darbo,L. Blanquart,M. Holder,P. Skubic,L. Santi,R. Boyd,O.J. Hayes,Fabrizio Scuri,M. Ackers,B. De Lotto,A. Joshi,T. Mouthuy,Y. Gally,J. C. Clemens,E. Vigeolas,T. Kuhl,G. Cabras,H. Zobernig,J. Treis,Saverio D'Auria,P. Polevin,K. H. Becks,Dario Barberis,L. Stupka,P.A. Fischer,E. Piotto,D. Cobai,Bianca Osculati,Z. Kohout,D. Bintinger,Phillip Gutierrez,N. Palaio,A. Seiden,A. Andreazza,Leonardo Paolo Rossi,D.E. Dorfan,J. Wüstenfeld,P. Gerlach,F McCormack,Michael A. Strauss,R. Kluit,Jane Nachtman,Vaclav Vrba,C. Caso,Chiara Meroni,Hartmut Sadrozinski,Norbert Wermes,P. Sinervo,Alexandre N. Rozanov,C. Linder,G. Gorfine,F. Parodi,P. Morettini,S. Meuser,M. J. Kobel,Z. Ling,T. Fahland,Y. B. Pan,G. Lenzen,A. Brandl,Martin Hoeferkamp,E.N. Spencer,R. Wunstorf,K. W. Glitza,S. Kleinfelder,Vic Vacek,F. Waldner,J. Dailing,A. H. Mahmood,S. B. Athar,R. Beccherle,Sau Lan Wu,M. G. D. Gilchriese,A. J. Lankford,E. Charles,G. Ridolfi,E. Anderssen,M. Keil,M. Olcese,J. A. Matthews,Francesco Ragusa,F. R. Wappler,G. Comes,P A. Delpierre,Ingrid U. Scott,G. D. Hallewell,C. Becker,A. Pozzo,T. Dubbs,D. Fasching,T.R. McMahon,M. Ziolkowski +141 more
Journal ArticleDOI
The ATLAS silicon pixel sensors
M.S Alam,Alessandra Ciocio,Kevin Einsweiler,J. Emes,Murdock Gilchriese,A. Joshi,S. Kleinfelder,R. Marchesini,F McCormack,O. Milgrome,N. Palaio,F Pengg,J. Richardson,G. Zizka,M. Ackers,A Andreazza,G. Comes,Peter Fischer,M Keil,V Klasen,T Kuhl,S. Meuser,W. Ockenfels,B. Raith,J. Treis,Norbert Wermes,Claus Gößling,F. Hügging,J. Wüstenfeld,R. Wunstorf,Dario Barberis,R. Beccherle,Giovanni Darbo,Guido Gagliardi,Claudia Gemme,P. Morettini,P. Musico,B. Osculati,F. Parodi,Leonardo Paolo Rossi,L. Blanquart,P. Breugnon,David Calvet,J. C. Clemens,P A. Delpierre,Gregory David Hallewell,D Laugier,T. Mouthuy,Alexandre Rozanov,I. Valin,M. Aleppo,Massimo Caccia,Francesco Ragusa,C Troncon,G. Lutz,Robert Richter,T. Rohe,A. Brandl,Grant Gorfine,Martin Hoeferkamp,Sally Seidel,G. Boyd,P. Skubic,Petr Sicho,L Tomasek,Vaclav Vrba,M. Holder,Michael Ziolkowski,Saverio D'Auria,C. Del Papa,E. Charles,D. Fasching,K. H. Becks,G. Lenzen,C. Linder +74 more
TL;DR: In this article, prototype sensors for the ATLAS silicon pixel detector have been developed, guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering.
Journal ArticleDOI
A measurement of Lorentz angle and spatial resolution of radiation hard silicon pixel sensors
I. V. Gorelov,Grant Gorfine,Martin Hoeferkamp,Sally Seidel,Alessandra Ciocio,Kevin Einsweiler,Murdock Gilchriese,A. Joshi,S. Kleinfelder,R. Marchesini,O. Milgrome,N. Palaio,F Pengg,J. Richardson,G. Zizka,M. Ackers,Peter Fischer,M Keil,S. Meuser,T. Stockmanns,J. Treis,Norbert Wermes,Claus Gößling,F. Hügging,J. Wüstenfeld,R. Wunstorf,Dario Barberis,R. Beccherle,M. Cervetto,Giovanni Darbo,Guido Gagliardi,C. Gemme,Paolo Morettini,P. Netchaeva,Bianca Osculati,F. Parodi,Leonardo Paolo Rossi,K. Dao,D. Fasching,L. Blanquart,P. Breugnon,David Calvet,J.C. Clemens,P A. Delpierre,Gregory David Hallewell,D Laugier,T. Mouthuy,Alexandre Rozanov,C. Trouilleau,I. Valin,M. Aleppo,A. Andreazza,Massimo Caccia,T. Lari,Chiara Meroni,Francesco Ragusa,Clara Troncon,G. Vegni,T. Rohe,G. Boyd,Horst Severini,P. Skubic,J. Snow,P. Sicho,L Tomasek,Vaclav Vrba,M. Holder,D. Lipka,Michael Ziolkowski,D. Cauz,S. D'Auria,C. Del Papa,H. Grassman,L. Santi,K. H. Becks,P. Gerlach,C. Grah,I. M. Gregor,Torsten Harenberg,C. Linder +79 more
TL;DR: In this article, the effect due to magnetic field variation was explained by the variation of the electric field inside the detectors arising from the different bias conditions, and the depletion depths of irradiated sensors at various bias voltages were also measured.