D. Boemi

TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.

TL;DR: In this paper, the authors summarized the final results obtained by the RD48 collaboration, focusing on the more practical aspects directly relevant for LHC applications, including the changes of the effective doping concentration (depletion voltage) and the dependence of radiation effects on fluence, temperature and operational time.

TL;DR: The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a 〈1 0 0 0〉 substrate as discussed by the authors.

TL;DR: The results of two beam tests performed in July and September 1995 at CERN using silicon microstrip detectors of various types: single-sided, double-sided with small angle stereo strips, double sided with orthogonal strips and doublesided with pads are reported in this article.

TL;DR: In this paper, the authors used two identical modules, each consisting of two crystals bonded together, to detect minimum ionizing particles with a signal-to-noise ratio ranging from 9.3 for the irradiated detector up to 20.5 for the non-irradiated detector.