Z
Zhengwen Li
Researcher at IBM
Publications - 97
Citations - 1481
Zhengwen Li is an academic researcher from IBM. The author has contributed to research in topics: Layer (electronics) & Gate dielectric. The author has an hindex of 20, co-authored 97 publications receiving 1421 citations. Previous affiliations of Zhengwen Li include Air Products & Chemicals & Carleton University.
Papers
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Journal ArticleDOI
Atomic Layer Deposition of Ultrathin Copper Metal Films from a Liquid Copper(I) Amidinate Precursor
TL;DR: In this article, a method for producing thin, completely continuous and highly conductive copper films conformally inside very narrow holes with aspect ratios over 35:1 by atomic layer deposition (ALD) is described.
Journal ArticleDOI
Synthesis and characterization of copper(I) amidinates as precursors for atomic layer deposition (ALD) of copper metal.
TL;DR: These compounds are planar dimers, bridged by nearly linear N-Cu-N bonds that are well-suited for atomic layer deposition (ALD) of copper metal films that are pure, highly conductive, conformal, and strongly adherent to substrates.
Proceedings ArticleDOI
High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization
C-H. Lin,Brian J. Greene,Shreesh Narasimha,J. Cai,A. Bryant,Carl J. Radens,Vijay Narayanan,Barry Linder,Herbert L. Ho,A. Aiyar,E. Alptekin,J-J. An,Michael V. Aquilino,Ruqiang Bao,V. Basker,Nicolas Breil,MaryJane Brodsky,William Y. Chang,Clevenger Leigh Anne H,Dureseti Chidambarrao,Cathryn Christiansen,D. Conklin,C. DeWan,H. Dong,L. Economikos,Bernard A. Engel,Sunfei Fang,D. Ferrer,A. Friedman,Allen H. Gabor,Fernando Guarin,Ximeng Guan,M. Hasanuzzaman,J. Hong,D. Hoyos,Basanth Jagannathan,S. Jain,S.-J. Jeng,J. Johnson,B. Kannan,Y. Ke,Babar A. Khan,Byeong Y. Kim,Siyuranga O. Koswatta,Amit Kumar,T. Kwon,Unoh Kwon,L. Lanzerotti,H-K Lee,W-H. Lee,A. Levesque,Wai-kin Li,Zhengwen Li,Wei Liu,S. Mahajan,Kevin McStay,Hasan M. Nayfeh,W. Nicoll,G. Northrop,A. Ogino,Chengwen Pei,S. Polvino,Ravikumar Ramachandran,Z. Ren,Robert R. Robison,Saraf Iqbal Rashid,Viraj Y. Sardesai,S. Saudari,Dominic J. Schepis,Christopher D. Sheraw,Shariq Siddiqui,Liyang Song,Kenneth J. Stein,C. Tran,Henry K. Utomo,Reinaldo A. Vega,Geng Wang,Han Wang,W. Wang,X. Wang,D. Wehelle-Gamage,E. Woodard,Yongan Xu,Y. Yang,N. Zhan,Kai Zhao,C. Zhu,K. Boyd,E. Engbrecht,K. Henson,E. Kaste,Siddarth A. Krishnan,Edward P. Maciejewski,Huiling Shang,Noah Zamdmer,R. Divakaruni,J. Rice,Scott R. Stiffler,Paul D. Agnello +98 more
TL;DR: In this article, the authors present a fully integrated 14nm CMOS technology featuring fin-FET architecture on an SOI substrate for a diverse set of SoC applications including HP server microprocessors and LP ASICs.
Journal ArticleDOI
Nucleation and Adhesion of ALD Copper on Cobalt Adhesion Layers and Tungsten Nitride Diffusion Barriers
TL;DR: In this paper, an adhesion-enhancing layer of sputtered tantalum metal is placed between the TaNx and the copper, which serves as the seed for electroplating of the bulk of the copper interconnections.
Journal ArticleDOI
Thin, Continuous, and Conformal Copper Films by Reduction of Atomic Layer Deposited Copper Nitride†
Zhengwen Li,Roy G. Gordon +1 more
TL;DR: In this article, a method for producing thin, completely continuous, and highly conductive copper films conformally inside very narrow holes with aspect ratios of over 40:1 is described, and the first step in the process is atomic layer deposition (ALD) of copper(I) nitride, Cu3N, by the alternating reactions of copper N,N′-di-sec-butylacetamidinate vapor and ammonia on surfaces heated to approximately 160 °C.