W
W. Wang
Researcher at IBM
Publications - 5
Citations - 171
W. Wang is an academic researcher from IBM. The author has contributed to research in topics: Titanium nitride & CMOS. The author has an hindex of 3, co-authored 5 publications receiving 142 citations.
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Proceedings ArticleDOI
High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization
C-H. Lin,Brian J. Greene,Shreesh Narasimha,J. Cai,A. Bryant,Carl J. Radens,Vijay Narayanan,Barry Linder,Herbert L. Ho,A. Aiyar,E. Alptekin,J-J. An,Michael V. Aquilino,Ruqiang Bao,V. Basker,Nicolas Breil,MaryJane Brodsky,William Y. Chang,Clevenger Leigh Anne H,Dureseti Chidambarrao,Cathryn Christiansen,D. Conklin,C. DeWan,H. Dong,L. Economikos,Bernard A. Engel,Sunfei Fang,D. Ferrer,A. Friedman,Allen H. Gabor,Fernando Guarin,Ximeng Guan,M. Hasanuzzaman,J. Hong,D. Hoyos,Basanth Jagannathan,S. Jain,S.-J. Jeng,J. Johnson,B. Kannan,Y. Ke,Babar A. Khan,Byeong Y. Kim,Siyuranga O. Koswatta,Amit Kumar,T. Kwon,Unoh Kwon,L. Lanzerotti,H-K Lee,W-H. Lee,A. Levesque,Wai-kin Li,Zhengwen Li,Wei Liu,S. Mahajan,Kevin McStay,Hasan M. Nayfeh,W. Nicoll,G. Northrop,A. Ogino,Chengwen Pei,S. Polvino,Ravikumar Ramachandran,Z. Ren,Robert R. Robison,Saraf Iqbal Rashid,Viraj Y. Sardesai,S. Saudari,Dominic J. Schepis,Christopher D. Sheraw,Shariq Siddiqui,Liyang Song,Kenneth J. Stein,C. Tran,Henry K. Utomo,Reinaldo A. Vega,Geng Wang,Han Wang,W. Wang,X. Wang,D. Wehelle-Gamage,E. Woodard,Yongan Xu,Y. Yang,N. Zhan,Kai Zhao,C. Zhu,K. Boyd,E. Engbrecht,K. Henson,E. Kaste,Siddarth A. Krishnan,Edward P. Maciejewski,Huiling Shang,Noah Zamdmer,R. Divakaruni,J. Rice,Scott R. Stiffler,Paul D. Agnello +98 more
TL;DR: In this article, the authors present a fully integrated 14nm CMOS technology featuring fin-FET architecture on an SOI substrate for a diverse set of SoC applications including HP server microprocessors and LP ASICs.
Proceedings ArticleDOI
Parasitic Resistance Reduction Strategies for Advanced CMOS FinFETs Beyond 7nm
Heng Wu,Oleg Gluschenkov,Gen Tsutsui,Chengyu Niu,Kevin W. Brew,Curtis Durfee,Christopher Prindle,Vimal Kamineni,Shogo Mochizuki,Christian Lavoie,Edward J. Nowak,Zuoguang Liu,Jie Yang,Samuel S. Choi,James J. Demarest,Lan Yu,Adra Carr,W. Wang,Jay W. Strane,Stan D. Tsai,Y. Liang,H. P. Amanapu,Saraf Iqbal Rashid,Ryan Kevin J,F. Lie,Walter Kleemeier,Kisik Choi,Cave Nigel,Tenko Yamashita,Andreas Knorr,Dinesh Gupta,Balasubramanian S. Pranatharthi Haran,Dechao Guo,Huiming Bu,Mukesh Khare +34 more
TL;DR: In this paper, the external parasitic resistance in advanced FinFET technology is investigated in terms of source/drain epi resistance, contact resistance and middle of line metal stud resistance, and various resistance reduction knobs have been experimentally explored in these three aspects.
Proceedings ArticleDOI
Integrated dual SPE processes with low contact resistivity for future CMOS technologies
Heng Wu,Soon-Cheon Seo,Chengyu Niu,W. Wang,Gen Tsutsui,Oleg Gluschenkov,Zuoguang Liu,A. Petrescu,Adra Carr,Sam Choi,Stan D. Tsai,Chanro Park,Indira Seshadri,Anuja DeSilva,Abraham Arceo,George Yang,Muthumanickam Sankarapandian,Chris M. Prindle,Kerem Akarvardar,Curtis Durfee,Jie Yang,Praneet Adusumilli,Bruce Miao,Jay W. Strane,Walter Kleemeier,Mark Raymond,Kisik Choi,F. Lie,Tenko Yamashita,Andreas Knorr,Dinesh Gupta,Dechao Guo,Rama Divakaruni,Huiming Bu,Mukesh Khare +34 more
TL;DR: In this article, a manufacturable CMOS dual solid phase epitaxy (SPE) process with pc < 22×10−9 Q-cm2 on both NFET and PFET is demonstrated on the hardware with 7nm ground rule.
Journal ArticleDOI
Study of TiN and TaN Underlayer Properties and Their Influence on W Growth
Shanti Pancharatnam,Gabriel Rodriguez,W. Wang,Gauri Karve,Jean E. Wynne,Brock Mendoza,Scott DeVries,R. N. Pujari,Mary Breton,Adra Carr,L. White +10 more
TL;DR: In this paper, the changes in tungsten (W) film growth and resistance are studied using different titanium nitride and tantalum nitride (TaN) underlayer films, using surface characterization techniques to obtain the differences in surface morphology and grain sizes that influence the growth of W on these films.
Proceedings ArticleDOI
Study of titanium nitride underlayer properties and its influence on tungsten growth
Shanti Pancharatnam,Jean E. Wynne,Gauri Karve,Adra Carr,Brock Mendoza,Lisamarie White,Gabriel Rodriguez,Scott De Vries,W. Wang +8 more
TL;DR: In this paper, the changes in tungsten (W) film growth and resistance are studied using different titanium nitride (TiN) underlayer films, and different precursors and processes used for TiN deposition affect the W growth and film properties.