Journal ArticleDOI
A Black Phosphorus Carbide Infrared Phototransistor
Wee Chong Tan,Li Huang,Rui Jie Ng,Lin Wang,Dihan Hasan,T. Duffin,Karuppannan Senthil Kumar,Christian A. Nijhuis,Chengkuo Lee,Kah-Wee Ang +9 more
TLDR
A novel 2DM, black phosphorous carbide (b-PC) with a wide absorption spectrum up to 8000 nm is synthesized and a b-PC phototransistor with a tunable responsivity and response time at an excitation wavelength of 2004 nm is demonstrated.Abstract:
Photodetectors with broadband detection capability are desirable for sensing applications in the coming age of the internet-of-things. Although 2D layered materials (2DMs) have been actively pursued due to their unique optical properties, by far only graphene and black arsenic phosphorus have the wide absorption spectrum that covers most molecular vibrational fingerprints. However, their reported responsivity and response time are falling short of the requirements needed for enabling simultaneous weak-signal and high-speed detections. Here, a novel 2DM, black phosphorous carbide (b-PC) with a wide absorption spectrum up to 8000 nm is synthesized and a b-PC phototransistor with a tunable responsivity and response time at an excitation wavelength of 2004 nm is demonstrated. The b-PC phototransistor achieves a peak responsivity of 2163 A W-1 and a shot noise equivalent power of 1.3 fW Hz-1/2 at 2004 nm. In addition, it is shown that a response time of 0.7 ns is tunable by the gating effect, which renders it versatile for high-speed applications. Under the same signal strength (i.e., excitation power), its performance in responsivity and detectivity in room temperature condition is currently ahead of recent top-performing photodetectors based on 2DMs that operate with a small bias voltage of 0.2 V.read more
Citations
More filters
Journal ArticleDOI
Progress, Challenges, and Opportunities for 2D Material Based Photodetectors
TL;DR: A review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented in this paper, where a brief insight into the detection mechanisms of 2D material photodeterceptors as well as introducing the figure-of-merits which are key factors for a reasonable comparison between different photoderectors is provided.
Journal ArticleDOI
New Frontiers on van der Waals Layered Metal Phosphorous Trichalcogenides
Journal ArticleDOI
Recent Advances in the Functional 2D Photonic and Optoelectronic Devices
Journal ArticleDOI
High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region.
Feng Wu,Qing Li,Peng Wang,Hui Xia,Zhen Wang,Yang Wang,Man Luo,Long Chen,Fansheng Chen,Jinshui Miao,Jinshui Miao,Xiaoshuang Chen,Wei Lu,Chongxin Shan,Anlian Pan,Xing Wu,Wencai Ren,Deep Jariwala,Weida Hu +18 more
TL;DR: The authors design photovoltaic detectors and photodiodes based on MoS2 and doped AsP heterojunction with unilateral depletion region reporting high external quantum efficiency of 71% under zero applied bias.
Journal ArticleDOI
2D material broadband photodetectors
Jiandong Yao,Guowei Yang +1 more
TL;DR: This review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs) and provides several viewpoints for the future development of this burgeoning field.
References
More filters
Journal ArticleDOI
Ultrasensitive photodetectors based on monolayer MoS2.
TL;DR: Ultraensitive monolayer MoS2 phototransistors with improved device mobility and ON current are demonstrated, showing important potential for applications in MoS 2-based integrated optoelectronic circuits, light sensing, biomedical imaging, video recording and spectroscopy.
Journal ArticleDOI
Direct observation of a widely tunable bandgap in bilayer graphene
Yuanbo Zhang,Tsung-Ta Tang,Tsung-Ta Tang,Caglar Girit,Zhao Hao,Michael C. Martin,Alex Zettl,Alex Zettl,Michael F. Crommie,Michael F. Crommie,Y. Ron Shen,Y. Ron Shen,Feng Wang,Feng Wang +13 more
TL;DR: This work demonstrates a gate-controlled, continuously tunable bandgap of up to 250 meV and suggests novel nanoelectronic and nanophotonic device applications based on graphene that have eluded previous attempts.
Journal ArticleDOI
Ultrafast graphene photodetector
TL;DR: This work demonstrates ultrafast transistor-based photodetectors made from single- and few-layer graphene that do not degrade for optical intensity modulations up to 40 GHz and suggests that the intrinsic bandwidth may exceed 500 GHz.
Journal ArticleDOI
ZnO Nanowire UV Photodetectors with High Internal Gain
Cesare Soci,Arthur Zhang,Bin Xiang,Shadi A. Dayeh,David P. R. Aplin,Jeongwon Park,Xinyu Bao,Yu-Hwa Lo,Deli Wang +8 more
TL;DR: Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products higher than approximately 10 GHz, which promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.
Journal ArticleDOI
Hybrid graphene-quantum dot phototransistors with ultrahigh gain
Gerasimos Konstantatos,Michela Badioli,Louis Gaudreau,Johann Osmond,Maria Bernechea,F. Pelayo García de Arquer,Fabio Gatti,Frank H. L. Koppens +7 more
TL;DR: A gain of ∼10(8) electrons per photon and a responsivity of ∼ 10(7) A W(-1) in a hybrid photodetector that consists of monolayer or bilayer graphene covered with a thin film of colloidal quantum dots is demonstrated.
Related Papers (5)
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
Fengnian Xia,Han Wang,Yichen Jia +2 more
Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction
Hongtao Yuan,Xiaoge Liu,Farzaneh Afshinmanesh,Wei Li,Gang Xu,Jie Sun,Biao Lian,Alberto G. Curto,G. J. Ye,Yasuyuki Hikita,Yasuyuki Hikita,Zhi-Xun Shen,Zhi-Xun Shen,Shou-Cheng Zhang,Shou-Cheng Zhang,Xianhui Chen,Mark L. Brongersma,Mark L. Brongersma,Harold Y. Hwang,Harold Y. Hwang,Yi Cui,Yi Cui +21 more