Journal ArticleDOI
Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes
Basanta Roul,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,Neeraj Sinha,A. T. Kalghatgi,S. B. Krupanidhi +6 more
TLDR
In this article, the effect of N/Ga flux ratio on structural, morphological, and optical properties of GaN films on c-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE) was studied.Abstract:
GaN films were grown on c-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE). The effect of N/Ga flux ratio on structural, morphological, and optical properties was studied. The dislocation density found to increase with increasing the N/Ga ratio. The surface morphology of the films as seen by scanning electron microscopy shows pits on the surface and found that the pit density on the surface increases with N/Ga ratio. The room temperature photoluminescence study reveals the shift in band-edge emission toward the lower energy with increase in N/Ga ratio. This is believed to arise from the reduction in compressive stress in the films as is evidenced by room temperature Raman study. The transport studied on the Pt/GaN Schottky diodes showed a significant increase in leakage current with an increase in N/Ga ratio and was found to be caused by the increase in pit density as well as increase in dislocation density in the GaN films.read more
Citations
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Journal ArticleDOI
Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices
TL;DR: In this paper, structural, electrical, and transport properties of high quality CVD-fabricated n-GaN nanorods (NRs)/p-Si heterojunction diodes were reported.
Journal ArticleDOI
Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,A. T. Kalghatgi,S. B. Krupanidhi +7 more
TL;DR: In this paper, the influence of carrier concentration on the electrical transport behavior of InN/GaN heterostructure based Schottky junctions is discussed, and the position of the Fermi-level in InN films was modulated by the carrier concentration.
References
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Journal ArticleDOI
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
Journal ArticleDOI
Recent advances in Schottky barrier concepts
TL;DR: Theoretical models of Schottky-barrier height formation are reviewed in this paper, with a particular emphasis on the examination of how these models agree with general physical principles, and new concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.