Journal ArticleDOI
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
Bikramjit Chatterjee,Canberk Dundar,Thomas E. Beechem,Eric R. Heller,Dustin Kendig,Hyungtak Kim,Nazli Donmezer,Sukwon Choi +7 more
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TLDR
In this article, the authors examined self-heating in GaN-on-Si HEMTs via measurements of channel temperature using above-bandgap UV thermoreflectance imaging in combination with fully coupled electrothermal modeling.Abstract:
Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts device performance and reliability. Under nominal operating conditions, a hot-spot in the device channel develops under the drain side corner of the gate due to a concentration of volumetric heat generation leading to nonequilibrium carrier interactions and non-Fourier heat conduction. These subcontinuum effects obscure identification of the most salient processes impacting heating. In response, we examine self-heating in GaN-on-Si HEMTs via measurements of channel temperature using above-bandgap UV thermoreflectance imaging in combination with fully coupled electrothermal modeling. The methods together highlight the interplay of heat concentration and subcontinuum thermal transport showing that channel temperature cannot be determined solely by continuum scale heat transfer principles. Under conditions of equal power dissipation (PDISS = VDS × IDS = 250 mW), for example, a higher VDS bias (∼23 V) resulted in an ∼44% larger rise in peak junction temperature compared to that for a lower VDS (∼7.5 V) condition. The difference arises primarily due to reduction in the heat generating volume when operating under partially pinched-off (i.e., high VDS) conditions. Self-heating amplifies with this reduction as heating now takes place primarily over length scales less than the mean free path of the phonons tasked with energy dissipation. Being less efficient, the subcontinuum transport restricts thermal transport away from the device hot-spot causing a net increase in channel temperature. Taken together, even purely thermally driven device mean-time-to-failure is not, therefore, based on power dissipation alone as both bias dependence and subcontinuum thermal transport influence device lifetime.read more
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β-Gallium oxide power electronics
Andrew J. Green,James A. Speck,Grace Xing,Peter Moens,Fredrik Allerstam,Krister Gumaelius,Thomas Neyer,Andrea Arias-Purdue,Vivek Mehrotra,Akito Kuramata,Kohei Sasaki,Shinya Watanabe,Kimiyoshi Koshi,John D. Blevins,Oliver Bierwagen,Sriram Krishnamoorthy,Kevin Lee,Aaron R. Arehart,Adam T. Neal,Shin Mou,Steven A. Ringel,Avinash Kumar,Ankit Sharma,Krishnendu Ghosh,Uttam Singisetti,Wenshen Li,Kelson D. Chabak,Kyle J. Liddy,Ahmad E. Islam,Siddharth Rajan,Samuel Graham,Sukwon Choi,Zhen Chen,Masataka Higashiwaki +33 more
TL;DR: This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community to enhance the state-ofthe-art device performance and allow for efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform.
Journal ArticleDOI
Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging
Ronald J. Warzoha,Adam A. Wilson,Brian F. Donovan,Nazli Donmezer,Ashutosh Giri,Patrick E. Hopkins,Sukwon Choi,Darshan G. Pahinkar,Jingjing Shi,Samuel Graham,Zhiting Tian,Laura B. Ruppalt +11 more
TL;DR: In this paper, the authors highlight the importance of nanoscale thermal transport mechanisms at each layer in material hierarchies that make up modern electronic devices, including those mechanisms that impact thermal transport through: substrates, interfaces and two-dimensional materials, and heat spreading materials.
Journal ArticleDOI
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
TL;DR: In this article, the authors present a pedagogical presentation of the models of electronic states, their effects on device performance, and the presently accepted approaches to minimize their effects such as surface passivation and insulated gate technologies.
Journal ArticleDOI
Electro-thermal co-design of β-(AlxGa1-x)2O3/Ga2O3 modulation doped field effect transistors
Bikramjit Chatterjee,Yiwen Song,James Spencer Lundh,Yuewei Zhang,Zhanbo Xia,Zahabul Islam,Jacob H. Leach,Craig D. McGray,Praneeth Ranga,Sriram Krishnamoorthy,Aman Haque,Siddharth Rajan,Sukwon Choi +12 more
TL;DR: In this article, a thermal imaging was used to characterize the self-heating behavior of (Al 0.18Ga 0.82)2O3/Ga 2O3 modulation-doped field effect transistors (MODFETs) from a thermal perspective.
Journal ArticleDOI
A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Sukwon Choi,Samuel Graham,Srabanti Chowdhury,Eric R. Heller,Marko J. Tadjer,Gilberto Moreno,Sreekant Narumanchi +6 more
TL;DR: In this article, the need and process for the "electro-thermal co-design" of laterally configured ultra-wide bandgap (UWBG) electronic devices and thermal characterization methods, device thermal modeling practices, and both device and package-level thermal management solutions are discussed.
References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
AlGaN/GaN HEMTs-an overview of device operation and applications
TL;DR: This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems of the AlGaN/GaN high-electron mobility transistor.
Journal ArticleDOI
Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
C. J. Glassbrenner,Glen A. Slack +1 more
TL;DR: The thermal conductivity of single crystals of silicon has been measured from 3 to 1580\ifmmode^\circ\else\text degree\fi{}K and of single crystal of germanium with a radial flow technique as mentioned in this paper.
Journal ArticleDOI
Optical constants of epitaxial AlGaN films and their temperature dependence
D. Brunner,H. Angerer,E. Bustarret,F. Freudenberg,R. Höpler,Roman Dimitrov,Oliver Ambacher,Martin Stutzmann +7 more
TL;DR: In this paper, the authors studied the dependence of the absorption edge and the refractive index of wurtzite AlxGa1−xN films on temperature and composition using transmission and photothermal deflection spectroscopy.
Journal ArticleDOI
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Gaudenzio Meneghesso,Giovanni Verzellesi,F. Danesin,Fabiana Rampazzo,Franco Zanon,Augusto Tazzoli,Matteo Meneghini,Enrico Zanoni +7 more
TL;DR: In this article, failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed, and data from three de-accelerated tests are presented, which demonstrate a close correlation between failure mode and bias point.