Proceedings ArticleDOI
High-temperature passive components for extreme environments
Juan Colmenares,Saleh Kargarrazi,Hossein Elahipanah,Hans-Peter Nee,Carl-Mikael Zetterling +4 more
- pp 271-274
TLDR
In this paper, the high-temperature performances of different passive components have been studied, including capacitors in bipolar SiC technology up to 300°C and inductors up to 700°C.Abstract:
Silicon carbide is an excellent candidate when high temperature power electronics applications are considered. Integrated circuits as well as several power devices have been tested at high temperature. However, little attention has been paid to high temperature passive components that could enable the full SiC potential. In this work, the high-temperature performances of different passive components have been studied. Integrated capacitors in bipolar SiC technology have been tested up to 300° C and, three different designs of inductors have been tested up to 700° C.read more
Citations
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High Temperature Electronics.
TL;DR: In this paper, the fabrication of a silicon carbide (SiC) junction field effect transistor (J-FET) was shown to be feasible and a simplified building block amplifier was constructed and tested.
Journal ArticleDOI
500 $^\circ$ C SiC PWM Integrated Circuit
Saleh Kargarrazi,Hossein Elahipanah,Stefano Saggini,Debbie G. Senesky,Carl-Mikael Zetterling +4 more
TL;DR: In this paper, a high-temperature pulsewidth modulation (PWM) integrated circuit microfabricated in 4H-SiC bipolar process technology that features an on-chip integrated ramp generator is presented.
High Temperature Bipolar SiC Power Integrated Circuits
TL;DR: In the recent decade, integrated electronics in wide bandgap semiconductor technologies such as Gallium Nitride (GaN) and Silicon Carbide (SiC) have been shown to be viable candidates in extreme en...
Proceedings ArticleDOI
500°C SiC-based driver IC for SiC power MOSFETs
TL;DR: In this article, a SiC BJT-based IC for driving SiC power MOSFETs operational from room temperature up to 500° C. The driver features design simplicity, smaller chip size, smaller propagation delay, and relatively high driving currents compared to similar SiC-based drivers.
Journal ArticleDOI
Multilayer ferrite inductors for the use at high temperatures
Heike Bartsch,Sebastian Thiele,Jens Mueller,Dirk Schabbel,Beate Capraro,Timmy Reimann,Steffen Grund,Jörg Töpfer +7 more
TL;DR: In this article, the authors investigated the usability of the nickel copper zinc ferrite with the composition Ni0.4Cu0.2Zn0.98O3.99 for the realization of high-temperature multilayer coils as discrete components and integrated, buried function units in low temperature co-fired ceramics (LTCC).
References
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Journal ArticleDOI
The changing automotive environment: high-temperature electronics
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Journal ArticleDOI
Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated
TL;DR: In this paper, it is shown that silicon carbide (SiC) power electronics may have higher voltage ratings, lower voltage drops, higher maximum temperatures, and higher thermal conductivities.
Journal ArticleDOI
Power Conversion With SiC Devices at Extremely High Ambient Temperatures
Tsuyoshi Funaki,Juan Carlos Balda,J. Junghans,Avinash Srikrishnan Kashyap,Homer Alan Mantooth,Fred Barlow,Tsunenobu Kimoto,Takashi Hikihara +7 more
TL;DR: In this article, the capability of SiC power semiconductor devices, in particular JFET and Schottky barrier diodes (SBDs), for application in high-temperature power electronics was evaluated.
Journal ArticleDOI
Silicon carbide and diamond for high temperature device applications
TL;DR: The physical and chemical properties of wide bandgap semiconductors silicon carbide and diamond make these materials an ideal choice for device fabrication for applications in many different areas, e.g. light emitters, high temperature and high power electronics, high power microwave devices, micro-electromechanical system (MEMS) technology, and substrates as mentioned in this paper.
Journal ArticleDOI
Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments
TL;DR: In this paper, time-dependent dielectric-breakdown measurements are performed on state-of-the-art 4H-SiC MOS capacitors and double-implanted MOS field effect transistors (DMOSFET) with stress temperatures between 225°C and 375°C, and stress electric fields between 6 and 10 MV/cm.