Journal ArticleDOI
Highly responsive and low-cost ultraviolet sensor based on ZnS/p-Si heterojunction grown by chemical bath deposition
Arun Kumar,Manjeet Kumar,Vishwa Bhatt,Samrat Mukherjee,Sunil Kumar,Himanshu Sharma,Monu Yadav,S.K. Tomar,S.K. Tomar,Ju-Hyung Yun,Ravi Kant Choubey +10 more
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TLDR
In this paper, nanocrystalline ZnS thin films were deposited on p-Si substrates, and the crystalline quality of the as-deposited thin films was studied using X-ray diffraction and scanning transmission electron microscopy (STEM).Abstract:
The chemical bath deposition method has been widely used to synthesize low-cost and large scalable UV light photodetectors. Herein, nanocrystalline ZnS thin films were deposited on p-Si substrates. The crystalline quality of the as-deposited ZnS thin films was studied using X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). It was found that ZnS films showed good crystallinity with the growth direction along the (111) planes of a cubic zinc blend structure, as confirmed by both XRD and STEM analysis. The crystallite size was calculated to be 2.49 nm which is very close to the Bohr radius. Optical measurements revealed a blue shift of 5 nm which indicates quantum confinement effects in the as-deposited ZnS films. Furthermore, the morphology and grain size of ZnS film was estimated from scanning electron microscopy (SEM). Photoluminescence (PL) measurements showed evidence of multiple emissions in the as-deposited ZnS films, indicating the presence of commonly known intrinsic defects, for instance, Zn and S vacancies. The fabricated heterojunction ZnS/p-Si yields a high sensitivity (1.98 × 10 4 ), fast response and high peak detectivity (4.29 × 1012). The device showed a good responsivity of (68.98 mA/W) without biasing towards the UV light (350 nm) regime. Moreover, the linear Dynamic Range of 85.92 dB and the External Quantum Efficiency (EQE) of 23.42 % was obtained that can be utilized for UV photodetectors applications.read more
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Journal Article
An Efficient Way to Assemble ZnS Nanobelts as Ultraviolet-Light Sensors with Enhanced Photocurrent and Stability
Xiaosheng Fang,Yoshio Bando,Meiyong Liao,Tianyou Zhai,Ujjal K. Gautam,Liang Li,Yasuo Koide,Dmitri Golberg +7 more
TL;DR: In this paper, an efficient and low-cost method to achieve high-performance "visible-blind" microscale ZnS nanobelt-based ultraviolet (UV)-light sensors without using a lithography technique, by increasing the surface areas exposed to light, is reported.
Journal Article
Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors
Xiaosheng Fang,Yoshio Bando,Meiyong Liao,Ujjal K. Gautam,Chunyi Zhi,Benjamin Dierre,Baodan Liu,Tianyou Zhai,Takashi Sekiguchi,Yasuo Koide,Dmitri Golberg +10 more
TL;DR: Fang et al. as discussed by the authors proposed a method to solve the problem of nano-architectural nanoarchitectures by using a sensor-based approach based on NIMS Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan).
Journal ArticleDOI
Role of deposition parameters on the properties of the fabricated heterojunction ZnS/p-Si Schottky diode
Arun Kumar,Samrat Mukherjee,Himanshu Sharma,Umesh Kumar Dwivedi,Sunil Kumar,Rajesh K. Gangwar,Ravi Kant Choubey +6 more
TL;DR: In this paper , the Schottky diodes of ZnS/p-Si have been fabricated using the chemical bath deposition (CBD) technique at two different deposition durations under both stirring and non-stirring conditions.
Journal ArticleDOI
Fabrication of low-cost and fast-response visible photodetector based on ZnS:Mn/p-Si heterojunction
Arun Kumar,Samrat Mukherjee,Himanshu Sharma,Devendra Kumar Rana,Arvind Kumar,Rajesh Kumar,Ravi Kant Choubey +6 more
TL;DR: In this paper , a visible sensor based on ZnS:Mn/p-Si heterostructure has been fabricated for optical and electrochemical applications using Commission International DeI’Eclairage (CIE).
References
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