Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
Highly scalable resistive switching memory in metal nanowire crossbar arrays fabricated by electron beam lithography
TL;DR: In this article, maskless electron beam lithography (EBL) was used to fabricate very small structures in the electron beam resist layer, which were subsequently transferred to a metal and oxide film by the lift-off process.
Proceedings ArticleDOI
A floating memristor emulator circuit using operational transconductance amplifiers
TL;DR: In this paper, a floating memristor emulator circuit using operational transconductance amplifiers (OTAs) is presented, where OTAs are used to realize electronically tunable second-generation current conveyors (ECCIIs).
Proceedings ArticleDOI
Evolving nanoscale associative memories with memristors
TL;DR: This paper considers the problem of designing associative memories using nano-scale memristors and designs two complementary evolutionary frameworks for the automated discovery of circuits that exploits the analog, time-dependent properties of memristor, resulting in more efficient and simpler designs.
Journal ArticleDOI
Mesoscopic resistive switch: non-volatility, hysteresis and negative differential resistance
Sergey Savel'ev,Fabio Marchesoni,Alexander M. Bratkovsky,Alexander M. Bratkovsky,Alexander M. Bratkovsky +4 more
TL;DR: In this article, a simple model nanoswitch can be used as a memory resistor, whose resistance is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the presence of Joule's heat dissipation.
Journal ArticleDOI
Transient and steady coexisting attractors in a new memristor-based 4-D chaotic circuit
Hongbo Cao,Faqiang Wang +1 more
TL;DR: In this article, a new current-controlled memristor is proposed and its characteristics are analyzed, based on which a new four-dimensional chaotic circuit is proposed, and the complex dynamics of the proposed chaotic circuit are investigated.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.