Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
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TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Proceedings ArticleDOI
On-chip supervised learning rule for ultra high density neural crossbar using memristor for synapse and neuron
TL;DR: A memristor-based neural crossbar circuit to implement on-chip supervised learning rule and a compact learning cell with a crossbar latch consisting of two antiparallel oriented binary memristors is proposed.
Journal ArticleDOI
Low-power emerging memristive designs towards secure hardware systems for applications in internet of things
TL;DR: For achieving secure hardware systems in IoT, low-power design techniques based on emerging memristive technology for hardware security primitives/systems are presented and application-level impacts on the novel implementations of secret key generation, crypto functions and machine learning attacks are explored.
Journal ArticleDOI
Single‐Cell Stateful Logic Using a Dual‐Bit Memristor
Kyung-min Kim,Nuo Xu,Xinglong Shao,Kyung Jean Yoon,Hae Jin Kim,R. Stanley Williams,Cheol Seong Hwang +6 more
TL;DR: Here, a single physical dual‐bit memristor, possessing both bipolar and unipolar resistance switching characteristics and utilizing their operations, is demonstrated.
Journal ArticleDOI
Memristive Stateful Logic for Edge Boolean Computers
TL;DR: In this review, recent developments in stateful Logic technology are intensively explored and a summary of the evolution of stateful logic gates and their cascading strategies for Boolean computing is discussed.
Journal ArticleDOI
Exponential synchronization of coupled memristive neural networks via pinning control
TL;DR: Under a mild topology condition, it is proved that a small fraction of controlled subsystems can efficiently synchronize the coupled systems.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.