Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
Physically Transient Resistive Switching Memory With Material Implication Operation
Jing Sun,Zhan Wang,Fang Song,Saisai Wang,Momo Zhao,Haixia Gao,Mei Yang,Hong Wang,Xiaohua Ma,Yue Hao +9 more
TL;DR: In this paper, physically transient resistive switching devices with structure of Mg/SiO2/W for logic operation were proposed for the first time, despite the desirable nonvolatile memory characteristics, the dissolvable memory devices could be used to achieve material implication function.
Proceedings ArticleDOI
Rebooting Computing: The Challenges for Test and Reliability
Alberto Bosio,Ian O'Connor,Gennaro S. Rodrigues,F. K. Lima,Elena Ioana Vatajelu,G. Di Natale,Lorena Anghel,Surya Nagarajan,Moritz Fieback,Said Hamdioui +9 more
TL;DR: This paper highlights the major open questions regarding test and reliability of three emerging computing paradigms being approximate computing, computation-in-memory and neuromorphic computing.
Proceedings ArticleDOI
Exact In-Memory Multiplication Based on Deterministic Stochastic Computing
TL;DR: This work develops the first accurate SC-based in-memory multiplier using Memristor-Aided Logic and proposes a novel method, which takes advantage of the intrinsic properties of memristors, which improves the speed and reduces the memory usage and energy consumption.
Journal ArticleDOI
Applications of biomemristors in next generation wearable electronics.
TL;DR: Wearable electronic devices have a great market prospect in particular, the information storage and processing of real-time collected data is expected to benefit from the rapid development of mobile internet and artificial intelligence.
Proceedings ArticleDOI
Logic design with unipolar memristors
TL;DR: This paper proposes a method for performing logic with unipolar memristors based on OR and NOT logic gates, and indicates that any logic function could be performed using an external controller.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.