Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
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TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
A Seamless, Reconfigurable, and Highly Parallel In-Memory Stochastic Computing Approach With Resistive Random Access Memory Array
Wensheng Shen,Peng Huang,Mengqi Fan,Yudi Zhao,Yulin Feng,Lifeng Liu,Xiaoyan Liu,Xing Zhang,Jinfeng Kang +8 more
TL;DR: A seamless, reconfigurable, and highly parallel in-memory stochastic computing (SC) approach is proposed and experimentally demonstrated in resistive random access memory (RRAM) array.
Proceedings ArticleDOI
Memristors and memristive circuits - an overview
Ronald Tetzlaff,Torsten Schmidt +1 more
TL;DR: A tutorial overview of the state-of-the-art of theory and applications of single memristor devices as well as memristive circuits is presented.
Proceedings ArticleDOI
In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory
Brian L. Ji,H. F. Li,Q. Ye,S. Gausepohl,S. Deora,Dmitry Veksler,Saikumar Vivekanand,H. Chong,Harlan Stamper,T. Burroughs,C. Johnson,M. Smalley,Stephen Bennett,V. Kaushik,Joseph Piccirillo,Martin Rodgers,M. Passaro,Maximilian Liehr +17 more
TL;DR: Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs and bit-error-rate is proposed as a holistic parameter for the write cycle resistance statistics.
Proceedings ArticleDOI
Logic Design Using Memristors: An Emerging Technology
TL;DR: This paper provides an introduction to memristor, which is considered as the fourth circuit element along with resistor, inductor and capacitor, which can change the resistance under voltage control and can retain its value even after the voltage is withdrawn.
Journal ArticleDOI
Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions
Karol Fröhlich,Ivan Kundrata,M. Blaho,M. Precner,M. Ťapajna,Martin Klimo,Ondrej Such,Ondrej Skvarek +7 more
TL;DR: An analysis of implementation of the resistive switching structures for logic application based on Zadeh fuzzy logic showed that the accuracy of the Min/Max function determination depends on the ratio of the high and low resistivity states of the single switches.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.