Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
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TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
New directions in spintronics.
TL;DR: The electron spin is an archetypal two-state quantum system that is an excellent candidate for a solid-state realization of a qubit and opens up new possibilities for ‘more than Moore’ devices incorporating magnetic components that can couple to an external field, store a bit of data or represent a Boolean state.
Journal ArticleDOI
Memristors for the Curious Outsiders
TL;DR: A memristor is a 2-terminal passive component with a dynamic resistance depending on an internal parameter as mentioned in this paper, which can be used to perform machine learning and neural computation.
Journal ArticleDOI
Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure
M Munde,M Munde,Adnan Mehonic,Wing H. Ng,Mark Buckwell,Luca Montesi,Michel Bosman,Alexander L. Shluger,Anthony J. Kenyon +8 more
TL;DR: It is observed that devices with rougher oxide-electrode interfaces exhibit lower electroforming voltages and more reliable switching behaviour, and columnar microstructure in the oxide will be a key factor to consider for the optimization of future SiOx-based resistance random access memory.
Journal ArticleDOI
Stateful Three-Input Logic with Memristive Switches
Anne Siemon,R. Drabinski,M. J. Schultis,Xuan Hu,E. Linn,A. Heittmann,Rainer Waser,Damien Querlioz,Stephan Menzel,Joseph S. Friedman,Joseph S. Friedman +10 more
TL;DR: Multi-input memristive switch logic is proposed, which enables the function X OR (Y NOR Z) to be performed in a single-step with three Memristive switches, improving the overall system efficiency of a memristives switch-based computing architecture.
Journal ArticleDOI
Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications.
TL;DR: A dynamic ECM model of an electrochemical metallization cell is applied to complementary resistive switches, enabling study of the device behavior in terms of sweep rate and series resistance variations and facilitates applications of massively parallel computing paradigms required for neuromorphic applications.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
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Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
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Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.