Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
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TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Proceedings ArticleDOI
Design of Ternary Logic-in-Memory Based on Memristive Dual-Crossbars
TL;DR: Experimental results show that the operation steps of the proposed multi-trit ternary adder are reduced by up to 83.82%, as compared with previously published binary memristive logic designs.
Journal ArticleDOI
The bipolar resistive switching and negative differential resistance of NiO films induced by the interface states
TL;DR: In this paper, the authors investigated the bipolar resistive switching and negative differential resistance in NiO/Pt structures and found that the NiO films have the (111) preferential orientation.
Journal ArticleDOI
Reconfigurable and Efficient Implementation of 16 Boolean Logics and Full‐Adder Functions with Memristor Crossbar for Beyond von Neumann In‐Memory Computing
TL;DR: By merely relying on the fundamental structure of two memristors and a resistor, arbitrary Boolean logic can be reconfigured and calculated in two steps, while no additional voltage sources are needed beyond “±VP” and 0, and all state reversals are based on memristor set switching.
Book ChapterDOI
Applications: Nanoelectronics and Nanomagnetics
TL;DR: The state of the art in nanoelectronics, including nanomagnetics, has rapidly gone from devices at or above 100 nm in size to the realm of 30 nm and below, with a well-defined pathway to devices (including transistors for logic and memory) of about 15 nm as discussed by the authors.
Journal ArticleDOI
A flexible resistive switching device for logical operation applications in wearable systems
TL;DR: In this paper , a flexible memristor with Al/TiO x /Al/polyethylene terephthalate structure was developed to investigate the synergistic effect from the oxygen vacancy, H 2 O molecule, and NaCl.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.