Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
Bipolar Resistive Switch Effects in Calcium Fluoride Thin Films Deposited on Silicon Bottom Electrodes
TL;DR: In this paper, bipolar resistive switches in calcium fluoride thin films deposited on doped silicon bottom electrodes were investigated. And the authors found that the resistive switch is a local effect taking place in a small region in the vicinity of the interface with the electrode and discussed its mechanism based on the space charge-limited current model.
Journal ArticleDOI
Controlled Majority-Inverter Graph Logic With Highly Nonlinear, Self-Rectifying Memristor
TL;DR: In this paper, self-rectifying memristors are exploited for logic-in-memory computation, and a Pt/TaO x /Ta memristor with salient selfrectifying bipolar features (104 ON-/OFF-ratio, 105 rectification ratio, 105 nonlinearity, and ~1 pA leakage current) is presented.
Journal ArticleDOI
Optically driven intelligent computing with ZnO memristor
Jing Yang,Lingxiang Hu,Liufeng Shen,Jingrui Wang,Peihong Cheng,Huanming Lu,Fei Zhuge,Zhizhen Ye +7 more
TL;DR: In this article , an all-optically controlled memristive ISCM device based on a simple structure of Au/ZnO/Pt with the ZnO thin film sputtered at pure Ar atmosphere was proposed.
Journal ArticleDOI
An Arabidopsis protoplast isolation method reduces cytosolic acidification and activation of the chloroplast stress sensor SENSITIVE TO FREEZING 2.
TL;DR: It is concluded that S FR2 activation during protoplast isolation correlates with cytosolic acidification, implying that all SFR2 activation may be dependent on cytosol acidification.
Journal ArticleDOI
A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors.
Zhaoqun Zhang,Yanna Luo,Hong Seon Yang,Qing-Zhe Zhang,Gaobo Xu,Zhenhua Wu,Jinjuan Xiang,Qianqian Liu,Huaxiang Yin,Shujuan Mao,Xiaolei L. Wang,Junjie Li,Yongkui Zhang,Qing Luo,Jian-Hua Gao,Wenjuan Xiong,Jinbiao Liu,Yongliang Li,Junfeng Li,Jun Luo,Wenwu Tang +20 more
TL;DR: In this paper , the authors introduced polarization-switching and charge-trapping effects in a single Fe FET and fabricated a multi-field-effect transistor with bipolar-like characteristics based on advanced 10 nm node fin field effect transistors (PS-CT FinFET) with 9 nm thick Hf0.5Zr0.2 films.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.