Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
Noise cancellation of memristive neural networks
TL;DR: This paper shows how to approximate the behavior of synapses in neural networks using this memristive device based on the reproducible gradual resistance tuning in bipolar mode with asymmetric voltage thresholds.
Journal ArticleDOI
Finite-time Anti-synchronization of Memristive Stochastic BAM Neural Networks with Probabilistic Time-varying Delays
TL;DR: A class of MBAMNNs with mixed probabilistic time-varying delays and stochastic perturbations is formulated and an nonlinear control law is constructed and utilized to guarantee drive-response finite-time anti-synchronization of the neural networks.
Journal ArticleDOI
New Silk Road: From Mesoscopic Reconstruction/Functionalization to Flexible Meso-Electronics/Photonics Based on Cocoon Silk Materials.
Chenyang Shi,Fan Hu,Ronghui Wu,Zijie Xu,Guangwei Shao,Guangwei Shao,Rui Yu,Xiang-Yang Liu,Xiang-Yang Liu +8 more
TL;DR: In this paper, a comprehensive overview of the unique strategy of mesoscopic functionalization starting from silk fibroin (SF) materials to the fabrication of various meso flexible SF devices is presented.
Journal ArticleDOI
Picosecond multilevel resistive switching in tantalum oxide thin films
Ulrich Böttger,Moritz von Witzleben,Viktor Havel,Karsten Fleck,Vikas Rana,Rainer Waser,Rainer Waser,Stephan Menzel +7 more
TL;DR: In this article, the authors reveal that the programmable resistance states are linked to internal series resistances and the fundamental nonlinear switching kinetics, and the elucidated link between fundamental material properties and multi-bit data storage paves the way for designing resistive switches for memory and neuromorphic applications.
Journal ArticleDOI
Robust learning approach for neuro-inspired nanoscale crossbar architecture
TL;DR: An analytical model of the global reliability at the crossbar level is built based on a supervised learning method with multilayer and redundancy extensions and shows that high defect rate and important parameter variability can be handle efficiency with a moderate amount of redundancy.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.