Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
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TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
Finite-time stabilization of memristor-based inertial neural networks with time-varying delays combined with interval matrix method
Fei Wei,Guici Chen,Wenbo Wang +2 more
TL;DR: In this article, the authors investigated the finite-time stability problem of memristor-based inertial neural networks (MINNs) with time-varying delays in association with the interval matrix approach.
Posted Content
Mem-fractive Properties of Mushrooms.
TL;DR: It is shown that the fruit bodies of grey oyster fungi Pleurotus ostreatus exhibit encouraging behaviour in the eld of organic memory devices, demonstrating that nature continues to provide specimens that hold these unique and valuable electrical characteristics and which have the potential to advance the Eld of hybrid electronic systems.
Journal ArticleDOI
In situ generation of silver nanoparticles in PVDF for the development of resistive switching devices
Annalisa Chiappone,Matteo Gillono,Micaela Castellino,Katarzyna Bejtka,Krishna Rajan,Krishna Rajan,Ignazio Roppolo,Ignazio Roppolo,Denis Perrone,Sergio Bocchini,Carlo Ricciardi,Candido Pirri,Candido Pirri,Alessandro Chiolerio +13 more
TL;DR: In this paper, a morphological and chemical characterization of an in-situ generated silver nanoparticles (NPs) in polyvinylidene fluoride-hexafluoropropylene PVDF-HFP nanocomposite (NC) material is presented.
Journal ArticleDOI
Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor
Yi Li,Kang-Sheng Yin,Meiyun Zhang,Long Cheng,Ke Lu,Shibing Long,Ya-Xiong Zhou,Zhuo-Rui Wang,Kan-Hao Xue,Ming Liu,Xiangshui Miao +10 more
TL;DR: In this paper, random telegraph noise (RTN) was used as the indication of current instabilities in distinct resistance states of the Pt/Ti/HfO2/W memristor.
Journal ArticleDOI
An FPGA-Based Instrument for En-Masse RRAM Characterization With ns Pulsing Resolution
TL;DR: The integrated oscilloscope capability extends the versatility of the FPGA-based instrument, rendering a powerful tool for processing development of emerging memory technologies but also for testing theoretical hypotheses arising in the new field of memristors.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
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Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.