Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
$I$ – $V$ Characteristics of Antiparallel Resistive Switches Observed in a Single $\hbox{Cu/TaO}_{x}\hbox{/Pt}$ Cell
TL;DR: In this paper, the set operation with positive bias is due to the electrochemical formation of a Cu conductive filament (CF), whereas the set operations with negative bias are attributed to the electrolyte and formation of an oxygen vacancy VOCF.
Journal ArticleDOI
Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches
Yu Zhang,Yu Zhang,Xiaoyang Lin,J.-P. Adam,Guillaume Agnus,Wang Kang,Wenlong Cai,Jean-René Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Kaihua Cao,Kaihua Cao,Hushan Cui,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Chao Zhao,Weisheng Zhao,Dafiné Ravelosona +20 more
TL;DR: In this article, the authors proposed a resistively enhanced magnetic tunnel junction (Re-MTJ) nanopillar surrounded by resistive silicon switches for novel memristive memories, enabling new functionalities that are inaccessible for conventional nonvolatile memories.
Journal ArticleDOI
Efficient resistive memory effect on SrTiO3 by ionic-bombardment
Heiko Gross,Seongshik Oh +1 more
TL;DR: In this paper, the authors show that ionic-bombardment leads to a noticeable resistive memory effect on pure SrTiO3 (STO), and that it can be easily combined with lithographic processes to create spatially selective memory effect.
Journal ArticleDOI
Device Properties of Bernoulli Memristors
TL;DR: A general mathematical framework suitable for the systematic study of individual or networks of Bernoulli memristors can be developed and its usefulness is showcased.
Journal ArticleDOI
Optoelectronic Synapses Based on Hot-Electron-Induced Chemical Processes.
TL;DR: An artificial synapse with both electrical and optical memory effects using chemical transformations in plasmonic tunnel junctions is developed which can be used as multilevel nonvolatile memory, logic units or artificial synapses in future electronic, optoelectronic and artificial neural networks.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.