Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
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TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
CMOS back-end compatible memristors for in situ digital and neuromorphic computing applications.
TL;DR: In this paper, a flexible two-terminal memristor based on SiCO:H, which is a porous low-k back-end complementary metal-oxide-semiconductor (CMOS)-compatible material, was introduced.
Proceedings ArticleDOI
Memristor based adder circuit design
TL;DR: It is shown that the Kogge-Stone design has the best metric in terms of delay and area among the parallel prefix adders.
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Memristor-Based Resistive Random Access Memory: Hybrid Architecture for Low Power Compact Memory Design
TL;DR: This paper approaches to design memristor based nonvolatile 6-T static random access memory (SRAM) and analysis the circuit performance with conventional6-T SRAM cell in order to prove the parameter optimizations.
Proceedings ArticleDOI
Memristive nano-crossbar arrays enabling novel computing paradigms
TL;DR: Passive nano-crossbars arrays are highly attractive structures which enable ultra dense non-volatile memories, novel logic-in-memory approaches, and efficient synaptic connections for neuromorphic computing approaches.
Proceedings ArticleDOI
Efficient Organization of Digital Periphery to Support Integer Datatype for Memristor-Based CIM
TL;DR: This paper proposes a new organization of the periphery (next to memristor crossbar) to compute matrix-matrix multiplication (MMM) at the tile level to reduce energy and latency up to 50x and 3x, respectively, compared to the reference design.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.