Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
Logic Design Within Memristive Memories Using Memristor-Aided loGIC (MAGIC)
TL;DR: A novel resistive memory-the transpose memory is presented, which adds additional functionality to the memristive memory, and a case study of an adder is presented to demonstrate the design issues discussed in this paper.
Journal ArticleDOI
Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems.
Yi Li,Yingpeng Zhong,Zhang Jinjian,Lei Xu,Wang Qing,Huajun Sun,Hao Tong,Xiaoming Cheng,Xiangshui Miao +8 more
TL;DR: A Ag/AgInSbTe/Ag structure for chalcogenide memristor-based electronic synapses is demonstrated, using the memristive characteristics with reproducible gradual resistance tuning to mimic the activity-dependent synaptic plasticity that serves as the basis of memory and learning.
Journal ArticleDOI
Organic and hybrid resistive switching materials and devices
TL;DR: This review presents a timely and comprehensive review of the recent advances in organic and hybrid resistive switching materials and devices, with particular attention on their design principles for electronic property tuning and flexible device performance.
Journal ArticleDOI
Memristor Bridge Synapses
TL;DR: This paper proposes a memristor bridge circuit consisting of four identical memristors that is able to perform zero, negative, and positive synaptic weightings together with three additional transistors to perform synaptic operation for neural cells.
Journal ArticleDOI
Towards Oxide Electronics: a Roadmap
Mariona Coll,Josep Fontcuberta,Matthias Althammer,Manuel Bibes,Hans Boschker,Albert Calleja,Guanglei Cheng,Guanglei Cheng,Mario Cuoco,Regina Dittmann,Brahim Dkhil,I. El Baggari,Marco Fanciulli,Ignasi Fina,Elvira Fortunato,Carlos Frontera,Sz. Fujita,Vincent Garcia,Sebastian T. B. Goennenwein,Claes-Göran Granqvist,Julie Grollier,Rudolf Gross,Rudolf Gross,A. Hagfeldt,Gervasi Herranz,Kazuhiro Hono,Evert Pieter Houwman,Mark Huijben,Alexei Kalaboukhov,David J. Keeble,Gertjan Koster,Lena F. Kourkoutis,Jeremy Levy,M. Lira-Cantu,Judith L. MacManus-Driscoll,Jochen Mannhart,Rodrigo Martins,Stephan Menzel,Thomas Mikolajick,Mari Napari,Minh D. Nguyen,Gunnar A. Niklasson,Charles Paillard,Shrabani Panigrahi,Guus Rijnders,Florencio Sánchez,Pablo Sanchis,Simone Sanna,Darrell G. Schlom,Uwe Schroeder,Kyle Shen,Anne Siemon,M. Spreitzer,Hiroaki Sukegawa,R. Tamayo,J. van den Brink,Nini Pryds,F. Miletto Granozio +57 more
TL;DR: The Towards Oxide-Based Electronics (TO-BE) Action as mentioned in this paper has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries in a wide four-year project.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.