Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
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TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Efficient evaluation model including interconnect resistance effect for large scale RRAM crossbar array matrix computing
TL;DR: The simulation results indicate that the computing speed of the proposed model can be boosted by over three orders of magnitude with the computation deviation of 7.7% in comparison with the precise comprehensive model in the 64 kb crossbar array fabricated at the 14 nm technology node.
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Multilevel resistive switching performance of TiO2-based flexible memory prepared by low-temperature sol-gel method with UV irradiation
TL;DR: In this article, a flexible Ag/TiO2/ITO/PET resistive switching memory is prepared by low-temperature sol-gel method with UV irradiation, and the simple method that combined the advantages of solgel method and low temperature can be applied to fabricate high quality film.
Journal ArticleDOI
Implementation of All 27 Possible Univariate Ternary Logics With a Single ZnO Memristor
Yuejun Zhang,Xin-Hui Chen,Zhuo-Rui Wang,Qilai Chen,Gang Liu,Yi Li,Pengjun Wang,Run-Wei Li,Xiangshui Miao +8 more
TL;DR: All the 27 univariate ternary logic operations can be realized with a single ZnO three-state resistive switching memristor in at most three steps and could be beneficial for constructing future high-performance computation architectures.
Journal ArticleDOI
Skeleton-Based Synthesis Flow for Computation-in-Memory Architectures
Jintao Yu,Razvan Nane,Imran Ashraf,Mottaqiallah Taouil,Said Hamdioui,Henk Corporaal,Koen Bertels +6 more
TL;DR: A synthesis flow for mapping parallel applications on memristor-based CIM architecture employs solution templates that contain scheduling, placement, and routing information to map multiple algorithms with similar data flow graphs to thememristor crossbar; this template is named skeleton.
Journal ArticleDOI
Investigating unipolar switching in Niobium oxide resistive switches: Correlating quantized conductance and mechanism
TL;DR: In this paper, the authors investigated the mechanism in Niobium oxide based resistive switching (RS) devices, which shows unipolar switching with high ON/OFF ratio, good endurance cycles and high retention times.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
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Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.