Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
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TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
Global Dynamics of Memristor Oscillator
TL;DR: Compared with the case a > b, this oscillator displays more complicated dynamics for the case when a < b, and all global phase portraits are given for 50 cases on the Poincare disc, where a generalized normal sector method is applied.
Proceedings ArticleDOI
Analytical approach to single memristor circuits
TL;DR: This method is based on a Volterra series representation of the essential time functions of the circuit and describes the behavior of a general single memristor circuit, e.g. a circuit with an arbitrary linear two-port which is coupled to a Memristor and a current source.
Journal ArticleDOI
Controllable Seebeck Coefficients of a Metal-Diffused Aluminum Oxide Layer via Conducting Filament Density and Energy Filtering.
No Won Park,Dae Yun Kang,Won-Yong Lee,Yo Seop Yoon,Gil Sung Kim,Eiji Saitoh,Eiji Saitoh,Tae Geun Kim,Sang-Kwon Lee +8 more
TL;DR: The results showed that the Seebeck coefficients of the CF-containing AO layer in metal/AO/metal structures were influenced by the generation of the metallic CFs, which is due to the diffusion of the metal into the insulating AO layers when exposed to a temperature gradient in the direction of the cross plane of the sample.
Journal ArticleDOI
Reduction 93.7% time and power consumption using a memristor-based imprecise gradient update algorithm
Jie Li,Guangdong Zhou,Yingying Li,Jiahao Chen,Yuan Ge,Yan Mo,Yuanlei Yang,Xicong Qian,Wenwu Jiang,Hongbo Liu,Mingjian Guo,Lidan Wang,Shukai Duan +12 more
TL;DR: Based on the resistive switching behavior observed in the Ag/TiOx/F-doped SnO 2 memristor, the weight update by the P2P model enables the MLP network online training in the low accuracy Memristor with high performance and the time and power consumption ofmemristor can be largely reduced.
Proceedings ArticleDOI
Approximate in-Memory Computing on ReRAM Crossbars
Amad Ul Hassen,Salman Khokhar +1 more
TL;DR: This work presents a novel framework for approximate in-memory computing on memristive crossbars, and synthesized a crossbar design for edge detection that is 72% more compact than the state of the art on approximate synthesis for flow-based computing.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.