Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
A Survey of Memristive Threshold Logic Circuits
TL;DR: Different memristive threshold logic circuits that are inspired from the synaptic action of the flow of neurotransmitters in the biological brain are reviewed.
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Product and technology innovation: What can biomimicry inspire?
TL;DR: A multi-disciplinary framework has been developed to accomplish this analysis and the findings focus on the areas that have been most strikingly affected by the application of biomimicry and also highlight the emerging trends and opportunity areas.
Journal ArticleDOI
Probing memristive switching in nanoionic devices
Yuchao Yang,Ru Huang +1 more
TL;DR: This Review Article assesses the different techniques used to characterize memristive switching in nanoionic devices and proposes a general framework for such devices, based on the relative strengths and weaknesses in each case.
Journal ArticleDOI
On the physical properties of memristive, memcapacitive and meminductive systems
TL;DR: In this article, the physical properties of realistic memristive, memcapacitive and meminductive systems are discussed, and it is shown that diverging and non-crossing input-output curves of all these memory elements are physically possible in both quantum and classical regimes.
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Oxide Double‐Layer Nanocrossbar for Ultrahigh‐Density Bipolar Resistive Memory
Seo Hyoung Chang,Shinbuhm Lee,Dae-Young Jeon,So Jung Park,Gyu Tae Kim,Sang Mo Yang,Seung Chul Chae,Hyang Keun Yoo,Bo Soo Kang,Myoung-Jae Lee,Tae Won Noh +10 more
TL;DR: This paper presents a probabilistic analysis of the response of gallium arsenide to electricity and its applications in semiconductor devices and shows clear trends in high-performance materials and high-efficiency electronics.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.