Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
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TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
Recursive Boolean Formula Minimization Algorithms for Implication Logic
TL;DR: Two novel algorithms for minimization of recursive Boolean formula (RBF) are given, which is adequate for implementation of N-input 1-output Boolean functions (BFs) over basis {imply, false} using two memristors.
Journal ArticleDOI
All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics
Yoon Cheol Bae,Ah Rahm Lee,Gwang Ho Baek,Je Bock Chung,Taeyoon Kim,Jea-Gun Park,Jin Pyo Hong +6 more
TL;DR: It is reported that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics, and an associated Zener tunneling mechanism is proposed that explains the unique features of the p- n-p selector.
Journal ArticleDOI
Memcomputing: fusion of memory and computing
TL;DR: The CA and CC parts evolved into the central processing unit (CPU), whereas the M and R correspond to the high-speed main memory that stores data and instructions (SRAM and DRAM) and external mass storage, respectively.
Journal ArticleDOI
Synchronization and anti-synchronization of a fractional order delayed memristor-based chaotic system using active control
TL;DR: The issue of synchronization and anti-synchronization for fractional-delayed memristor-based chaotic system is studied by using active control strategy.
Journal ArticleDOI
Resistive Memory Devices Based on Reticular Materials for Electrical Information Storage.
Jongwon Oh,Seok Min Yoon +1 more
TL;DR: A recent review on the development of reticular material-based resistive random access memory (RRAM) devices and the study of their operational mechanisms are reviewed, and new challenges and future perspectives related to reticular materials-based RRAM are discussed.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
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Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.