Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
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TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
Spin–orbit torque controllable complete spin logic in a single magnetic heterojunction
Yanan Dong,Xiaonan Zhao,X. Han,Yingcai Fan,Xuejie Xie,Yanxue Chen,Lihui Bai,Youyong Dai,S. S. Yan,Yufeng Tian +9 more
TL;DR: In this paper, the authors demonstrate that all 16 Boolean logic functions can be realized within a single four-state nonvolatile IrMn/Co/Ru/CoPt magnetic heterojunction, where controllable field-free spin-orbit torque switching of the perpendicularly magnetized CoPt alloy is obtained, relying on the interlayer exchange coupling and exchange bias effect.
Journal ArticleDOI
Bipolar resistive switching effects with self-compliance and multilevel storage characteristics in Ag/MgZnO/Si structures
TL;DR: In this paper, the authors have fabricated the MgZnO thin films directly on low resistive silicon substrates by using a chemical solution deposition route Besides the investigation of the structures, morphologies, chemical states, and photoluminescence properties of the thin films, the bipolar resistive switching behaviours have been evaluated in the simple Ag/MgZnznO/Si structures.
Journal ArticleDOI
Probing the Critical Region of Conductive Filament in Nanoscale HfO 2 Resistive-Switching Device by Random Telegraph Signals
Chai Zheng,Jigang Ma,Weidong Zhang,Bogdan Govoreanu,Jian Fu Zhang,Zhigang Ji,Malgorzata Jurczak +6 more
TL;DR: In this article, a random-telegraph-signal-based defect-tracking technique was developed for probing the location and movements of individual defects and their statistical spatial and energy characteristics in the conductive filament (CF) in metal-oxide-based filamentary RRAM devices.
Journal ArticleDOI
Memristive effects in oxygenated amorphous carbon nanodevices
Tobias Bachmann,W.W. Koelmans,V. P. Jonnalagadda,M. Le Gallo,Claudia Santini,Abu Sebastian,Evangelos Eleftheriou,Monica F. Craciun,C.D. Wright +8 more
TL;DR: The successful operation of nanoscale a-COx memory cells are shown for both the storage of multilevel states and for the provision of an arithmetic accumulator, including a base-16, or hexadecimal, accumulator.
Journal ArticleDOI
Study of Memristive Associative Capacitive Networks for CAM Applications
TL;DR: In this study a highly accurate physics-based dynamical memristive device model is used to evaluate the network properties for various configurations and the high ON-to-OFF ratio of electrochemical metallization cells beneficially supports the functionality of the network.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
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Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.