Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
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TLDR
Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.Abstract:
The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.read more
Citations
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Journal ArticleDOI
A resettable and reprogrammable biomolecular keypad lock with dual outputs based on glucose oxidase-Au nanoclusters-Prussian blue nanocomposite films on an electrode surface.
TL;DR: A 2-input/3-output biomolecular logic gate system with 3 different types of output signals and a 2-to-1 encoder was developed with fluorescence intensity and UV-vis absorbance as dual outputs, which greatly enhanced the security level of the keypad lock.
Journal ArticleDOI
Memristive Devices for Neuromorphic Applications: Comparative Analysis
TL;DR: These features are considered with a special attention to how memristive devices can be implemented for reaching the goal, and comparison of characteristic properties of organic and inorganic memristives is discussed.
Journal ArticleDOI
Fluidic-Based Ion Memristors and Ionic Latches.
TL;DR: The formation of a nanoscale anodic silicon oxide layer on silicon electrodes in an aqueous environment leads to fluidic-based ionic memristive devices and ionic latches for large integrated fluidic ion logic circuitry, which can enable massively multiplexed smart biosensor arrays and complex active chemical circuits.
Journal ArticleDOI
Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Memtranstor.
Jianxin Shen,Dashan Shang,Yisheng Chai,Yue Wang,Junzhuang Cong,Shipeng Shen,Liqin Yan,Wenhong Wang,Young Sun +8 more
TL;DR: It is demonstrated here that nonvolatile logic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni/PMN-PT/Ni heterostructure.
Journal ArticleDOI
Tunnel conductivity switching in a single nanoparticle-based nano floating gate memory
TL;DR: This study shows that a reversible local switching in tunnel conductivity can be achieved by applying an appropriate voltage pulse using the tip of a scanning tunnelling microscope on NPs embedded in a TiO2 matrix, and provides useful information for the understanding mechanism or resistive switching.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
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Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Memristive devices and systems
Leon O. Chua,Sung-Mo Kang +1 more
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.