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Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

TLDR
The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
Abstract
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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Van der Waals heterostructures

TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
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A roadmap for graphene

TL;DR: This work reviews recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.
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Recent Advances in Ultrathin Two-Dimensional Nanomaterials

TL;DR: The unique advances on ultrathin 2D nanomaterials are introduced, followed by the description of their composition and crystal structures, and the assortments of their synthetic methods are summarized.
References
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Journal ArticleDOI

The rise of graphene

TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
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Boron nitride substrates for high-quality graphene electronics

TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
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Giant intrinsic carrier mobilities in graphene and its bilayer

TL;DR: Measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated and a sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.
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Approaching ballistic transport in suspended graphene.

TL;DR: This work shows that the fluctuations are significantly reduced in suspended graphene samples and reports low-temperature mobility approaching 200,000 cm2 V-1 s-1 for carrier densities below 5 x 109 cm-2, which cannot be attained in semiconductors or non-suspended graphene.
Journal ArticleDOI

Temperature-dependent transport in suspended graphene.

TL;DR: The resistivity of ultraclean suspended graphene is strongly temperature (T) dependent for 5
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