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Journal ArticleDOI

On-chip hot spot cooling using silicon thermoelectric microcoolers

Peng Wang, +1 more
- 02 Aug 2007 - 
- Vol. 102, Iss: 3, pp 034503
TLDR
In this article, a three-dimensional analytical thermal model of the silicon chip was developed and used to predict the on-chip hot spot cooling performance, and the effects of hot spot size, hot spot heat flux, silicon chip thickness, microcooler size, doping concentration in the silicon, and parasitic Joule heating from electric contact resistance on the cooling of onchip hot spots, were investigated in detail.
Abstract
Thermal management of microprocessors has become an increasing challenge in recent years because of localized high flux hot spots which cannot be effectively removed by conventional cooling techniques. This paper describes the use of the silicon chip itself as a thermoelectric cooler to suppress the hot spot temperature. A three-dimensional analytical thermal model of the silicon chip, including localized thermoelectric cooling, thermoelectric heating, silicon Joule heating, hot spot heating, background heating, and conductive/convective cooling on the back of the silicon chip, is developed and used to predict the on-chip hot spot cooling performance. The effects of hot spot size, hot spot heat flux, silicon chip thickness, microcooler size, doping concentration in the silicon, and parasitic Joule heating from electric contact resistance on the cooling of on-chip hot spots, are investigated in detail.

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Citations
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Journal ArticleDOI

The central role of the Peltier coefficient in thermoelectric cooling

TL;DR: In this article, the Peltier coefficient of a thermocouple has been derived from measurements of the two temperature gradients at the junction of the pair of thermocouples, and a precise value has been obtained but which deviates from the Kelvin relation.
Journal ArticleDOI

Transient Cooling and Heating Effects in Holey Silicon-Based Lateral Thermoelectric Devices for Hot Spot Thermal Management

TL;DR: In this paper, the role of anisotropy in transient cooling and heating effects is studied for lateral thermoelectric devices with anisotropic thermal conductivities, where the Peltier cooling and the Joule heating occur in a lateral direction.
Dissertation

Graphene Heat Spreaders for Electronics Thermal Management Applications

Yong Zhang
TL;DR: In this paper, thermal chemical vapor deposition (TCVD), liquid phase exfoliation (LPE) from graphite, and reduction of graphene ox- ide (GO) were used to synthesize graphene, and transfer methods were also demonstrated.

Superlattice µTEC Hot Spot Cooling

TL;DR: In this paper, the results of 3-D, electrothermal, finite element modeling of a superlattice micro-cooler were provided, focusing on the hot spot temperature and surface temperature reductions, respectively.
Journal ArticleDOI

A unified model for Digitized Heat Transfer in a microchannel

TL;DR: In this paper, the authors investigated the heat transfer characteristics of DHT for parallel plate and axisymmetric circular microchannels using scale analysis and numerical simulations and found that DHT is quantified by the Nusselt number (Nu).
References
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Book

CRC Handbook of Chemistry and Physics

TL;DR: CRC handbook of chemistry and physics, CRC Handbook of Chemistry and Physics, CRC handbook as discussed by the authors, CRC Handbook for Chemistry and Physiology, CRC Handbook for Physics,
Journal ArticleDOI

Thin-film thermoelectric devices with high room-temperature figures of merit

TL;DR: Th thin-film thermoelectric materials are reported that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys, and the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications.
Journal ArticleDOI

Quantum dot superlattice thermoelectric materials and devices.

TL;DR: It is demonstrated that improved cooling values relative to the conventional bulk (Bi,Sb)2(Se,Te)3thermoelectric materials using a n-type film in a one-leg thermoelectrics device test setup, which cooled the cold junction 43.7 K below the room temperature hot junction temperature of 299.8 K.
Journal ArticleDOI

Thermal sensors based on the seebeck effect

TL;DR: In this article, an analysis of the performance of integrated silicon thermopiles is presented and several thermal sensors that measure magnetic, mechanical, radiation and chemical signals, as well as electrical converters are reviewed.
Journal ArticleDOI

Seebeck Effect in Silicon

TL;DR: The Seebeck effect has been measured from liquid hydrogen temperatures into the intrinsic range for a series of single-crystal silicon samples in which varying concentrations of donor and acceptor atoms have been incorporated as discussed by the authors.
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