Journal ArticleDOI
On-chip hot spot cooling using silicon thermoelectric microcoolers
Peng Wang,Avram Bar-Cohen +1 more
TLDR
In this article, a three-dimensional analytical thermal model of the silicon chip was developed and used to predict the on-chip hot spot cooling performance, and the effects of hot spot size, hot spot heat flux, silicon chip thickness, microcooler size, doping concentration in the silicon, and parasitic Joule heating from electric contact resistance on the cooling of onchip hot spots, were investigated in detail.Abstract:
Thermal management of microprocessors has become an increasing challenge in recent years because of localized high flux hot spots which cannot be effectively removed by conventional cooling techniques. This paper describes the use of the silicon chip itself as a thermoelectric cooler to suppress the hot spot temperature. A three-dimensional analytical thermal model of the silicon chip, including localized thermoelectric cooling, thermoelectric heating, silicon Joule heating, hot spot heating, background heating, and conductive/convective cooling on the back of the silicon chip, is developed and used to predict the on-chip hot spot cooling performance. The effects of hot spot size, hot spot heat flux, silicon chip thickness, microcooler size, doping concentration in the silicon, and parasitic Joule heating from electric contact resistance on the cooling of on-chip hot spots, are investigated in detail.read more
Citations
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Journal ArticleDOI
An experimental study on an electro-osmotic flow-based silicon heat spreader
TL;DR: In this article, an electro-osmotic (EO) heat spreader for microprocessor cooling is proposed, which can be fabricated at the back surface of the microprocessor as an integral part and no extra space may be required.
Journal ArticleDOI
TSV-integrated thermoelectric cooling by holey silicon for hot spot thermal management.
TL;DR: Results show the combined passive and active cooling in TSV-integrated TEC offers effective hot spot thermal management solutions for advanced electronics.
Journal ArticleDOI
Highly nanotextured nickel-electroplated bismuth vanadate micropillars for hotspot removal via air- and spray-cooling
TL;DR: In this article, the electrospraying of bismuth vanadate (BiVO4) facilitated the formation of micropillars via diffusion-limited aggregation, yielding a highly textured surface.
Journal ArticleDOI
A fast and accurate temperature prediction method for microfluidic cooling with multiple distributed hotspots
TL;DR: In this paper, a simplified model based on the superposition principle was proposed to predict the temperature excess of multiple distributed hotspots with microfluidic cooling, which was experimentally verified to attain a deviation less than 15%.
Journal ArticleDOI
Two-Dimensional Mapping of Interface Thermal Resistance by Transient Thermal Measurement
TL;DR: This article develops a measurement technique that involves moving a thermal probe discretely across a large-area bonded substrate and acquiring the thermal interface resistance under the probe at each location until a 2-D map of the interface thermal resistance across the entire substrate is completed.
References
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Book
CRC Handbook of Chemistry and Physics
TL;DR: CRC handbook of chemistry and physics, CRC Handbook of Chemistry and Physics, CRC handbook as discussed by the authors, CRC Handbook for Chemistry and Physiology, CRC Handbook for Physics,
Journal ArticleDOI
Thin-film thermoelectric devices with high room-temperature figures of merit
TL;DR: Th thin-film thermoelectric materials are reported that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys, and the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications.
Journal ArticleDOI
Quantum dot superlattice thermoelectric materials and devices.
TL;DR: It is demonstrated that improved cooling values relative to the conventional bulk (Bi,Sb)2(Se,Te)3thermoelectric materials using a n-type film in a one-leg thermoelectrics device test setup, which cooled the cold junction 43.7 K below the room temperature hot junction temperature of 299.8 K.
Journal ArticleDOI
Thermal sensors based on the seebeck effect
TL;DR: In this article, an analysis of the performance of integrated silicon thermopiles is presented and several thermal sensors that measure magnetic, mechanical, radiation and chemical signals, as well as electrical converters are reviewed.
Journal ArticleDOI
Seebeck Effect in Silicon
Theodore H. Geballe,G. W. Hull +1 more
TL;DR: The Seebeck effect has been measured from liquid hydrogen temperatures into the intrinsic range for a series of single-crystal silicon samples in which varying concentrations of donor and acceptor atoms have been incorporated as discussed by the authors.