Journal ArticleDOI
Oxygen vacancy controlled tunable magnetic and electrical transport properties of (Li, Ni)-codoped ZnO thin films
TLDR
In this article, the electrical, magnetic, and magnetotransport properties of Li-Ni codoped ZnO thin films in the electron dominated, hole dominated, and insulating regimes were investigated.Abstract:
We investigated the electrical, magnetic, and magnetotransport properties of Li–Ni codoped ZnO thin films in the electron dominated, hole dominated, and insulating regimes. In a narrow window of oxygen growth pressure, 10−3–10−2 mbar, the films exhibited p-type conductivity with a maximum hole concentration ∼8.2×1017 cm−3. Magnetoresistance exhibited by the films is attributed to scattering of charge carriers due to localized magnetic moments. Insulating films showed superparamagnetic behavior, whereas both n-type and p-type films showed room temperature ferromagnetism. Our findings suggest that oxygen vacancies and Ni ions in cation site are jointly responsible for ferromagnetism that is not dependent on the carrier type.read more
Citations
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Spintronic oxides grown by laser-MBE
TL;DR: In this article, a review of the evolution of transition-metal oxide thin-film fabrication is presented, particularly with emphasis on transition metal oxide thin films, their versatile physical properties, and their impact on the field of spintronics.
Journal ArticleDOI
When bimetallic oxides and their complexes meet Fenton-like process.
Alfina Noviyanti, Yuyun Umaidah, Rini Mayasari,Wenhong Fu,Andreas Manseck,Jing Yi,Min Cheng,Yang Liu,Gaoxia Zhang,Ling Li,Li Du,Bo Li,Guangfu Wang,Xiaofeng Yang +11 more
TL;DR: In this paper, a review of the use of bimetallic oxides and their complexes as catalysts for Fenton-like reaction has attracted intense attention due to their high catalytic performance and excellent stability over a wide pH range.
Journal ArticleDOI
When bimetallic oxides and their complexes meet Fenton-like process
TL;DR: In this article , the authors classified bimetallic oxides and their complexes into Fe-based and Fe-free bimetal catalysts and focused on the performance of their respective applications in Fenton-like reactions.
Journal ArticleDOI
ZnO homojunction white light-emitting diodes
TL;DR: In this article, the electrical properties of individually doped ZnO:Na/Mg/Sb/Ti films were determined by means of the Hall system at the room temperature.
Journal ArticleDOI
Defect-driven magnetism in luminescent n/p-type pristine and Gd-substituted SnO2 nanocrystalline thin films.
TL;DR: The studies demonstrate that only structural defects such as V(O)(+) defects, not magnetic ions such as Gd(3+), are responsible for inducing ferromagnetism in SnO(2) thin films.
References
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Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
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Donor impurity band exchange in dilute ferromagnetic oxides.
TL;DR: It is proposed thatferromagnetic exchange here, and in dilute ferromagnetic nitrides, is mediated by shallow donor electrons that form bound magnetic polarons, which overlap to create a spin-split impurity band.
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Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Atsushi Tsukazaki,Akira Ohtomo,Takeyoshi Onuma,M. Ohtani,Takayuki Makino,Masatomo Sumiya,Keita Ohtani,Shigefusa F. Chichibu,S. Fuke,Yusaburou Segawa,Hideo Ohno,Hideomi Koinuma,Masashi Kawasaki +12 more
TL;DR: In this paper, the authors used a new technique to fabricate p-type ZnO reproducibly, and showed high-quality undoped films with electron mobility exceeding that in the bulk.
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Thin films: unexpected magnetism in a dielectric oxide.
TL;DR: It is shown that thin films of hafnium dioxide (HfO2), an insulating oxide better known as a dielectric layer for nanoscale electronic devices, can be ferromagnetic even without doping.
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Anisotropic ferromagnetism in substituted zinc oxide.
TL;DR: Results are interpreted in terms of a spin-split donor impurity-band model, which can account for ferromagnetism in insulating or conducting high-k oxides with concentrations of magnetic ions that lie far below the percolation threshold.