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Oxygen vacancy controlled tunable magnetic and electrical transport properties of (Li, Ni)-codoped ZnO thin films
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In this article, the electrical, magnetic, and magnetotransport properties of Li-Ni codoped ZnO thin films in the electron dominated, hole dominated, and insulating regimes were investigated.Abstract:
We investigated the electrical, magnetic, and magnetotransport properties of Li–Ni codoped ZnO thin films in the electron dominated, hole dominated, and insulating regimes. In a narrow window of oxygen growth pressure, 10−3–10−2 mbar, the films exhibited p-type conductivity with a maximum hole concentration ∼8.2×1017 cm−3. Magnetoresistance exhibited by the films is attributed to scattering of charge carriers due to localized magnetic moments. Insulating films showed superparamagnetic behavior, whereas both n-type and p-type films showed room temperature ferromagnetism. Our findings suggest that oxygen vacancies and Ni ions in cation site are jointly responsible for ferromagnetism that is not dependent on the carrier type.read more
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p-Type ZnO materials: Theory, growth, properties and devices
TL;DR: In this paper, the authors discuss p-type ZnO materials: theory, growth, properties and devices, comprehensively, and summarize the growth techniques and properties of P-type materials.
RaoP-Type ZnO Materials: Theory, Growth, Properties, and Devices
TL;DR: In this article, the authors discuss p-type ZnO materials: theory, growth, properties and devices, comprehensively, and summarize the growth techniques for p- type ZnOs.
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Oxygen Vacancy Promoted Heterogeneous Fenton-like Degradation of Ofloxacin at pH 3.2-9.0 by Cu Substituted Magnetic Fe3O4@FeOOH Nanocomposite
TL;DR: The new formed oxygen vacancy from in situ Fe substitution by Cu rather than promoted Fe3+/Fe2+ cycle was responsible for the ultraefficiency of Cu doped Fe3O4@FeOOH at neutral and even alkaline pHs.
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Antimicrobial Mechanism Based on H2O2 Generation at Oxygen Vacancies in ZnO Crystals
TL;DR: The comparatively detections showed that the antimicrobial activity of ZnO was correlated with its production of H2O2, and the t-ZnO treated in H2, which possessed the most V(O) in its crystal, produced the most H2 O2 and displayed the best antimacterial activity.
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Room-Temperature Ferromagnetism of Flowerlike CuO Nanostructures
TL;DR: In this article, the results of X-ray diffraction and Raman and Xray photoelectron spectroscopies show that the samples annealed at 400, 600, and 800 °C have a typical monoclinic structure and are absent of impurity phases.
References
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Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Journal ArticleDOI
Donor impurity band exchange in dilute ferromagnetic oxides.
TL;DR: It is proposed thatferromagnetic exchange here, and in dilute ferromagnetic nitrides, is mediated by shallow donor electrons that form bound magnetic polarons, which overlap to create a spin-split impurity band.
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Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Atsushi Tsukazaki,Akira Ohtomo,Takeyoshi Onuma,M. Ohtani,Takayuki Makino,Masatomo Sumiya,Keita Ohtani,Shigefusa F. Chichibu,S. Fuke,Yusaburou Segawa,Hideo Ohno,Hideomi Koinuma,Masashi Kawasaki +12 more
TL;DR: In this paper, the authors used a new technique to fabricate p-type ZnO reproducibly, and showed high-quality undoped films with electron mobility exceeding that in the bulk.
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Thin films: unexpected magnetism in a dielectric oxide.
TL;DR: It is shown that thin films of hafnium dioxide (HfO2), an insulating oxide better known as a dielectric layer for nanoscale electronic devices, can be ferromagnetic even without doping.
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Anisotropic ferromagnetism in substituted zinc oxide.
TL;DR: Results are interpreted in terms of a spin-split donor impurity-band model, which can account for ferromagnetism in insulating or conducting high-k oxides with concentrations of magnetic ions that lie far below the percolation threshold.