Journal ArticleDOI
Oxygen vacancy controlled tunable magnetic and electrical transport properties of (Li, Ni)-codoped ZnO thin films
TLDR
In this article, the electrical, magnetic, and magnetotransport properties of Li-Ni codoped ZnO thin films in the electron dominated, hole dominated, and insulating regimes were investigated.Abstract:
We investigated the electrical, magnetic, and magnetotransport properties of Li–Ni codoped ZnO thin films in the electron dominated, hole dominated, and insulating regimes. In a narrow window of oxygen growth pressure, 10−3–10−2 mbar, the films exhibited p-type conductivity with a maximum hole concentration ∼8.2×1017 cm−3. Magnetoresistance exhibited by the films is attributed to scattering of charge carriers due to localized magnetic moments. Insulating films showed superparamagnetic behavior, whereas both n-type and p-type films showed room temperature ferromagnetism. Our findings suggest that oxygen vacancies and Ni ions in cation site are jointly responsible for ferromagnetism that is not dependent on the carrier type.read more
Citations
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Research progress in ZnO single-crystal: growth, scientific understanding, and device applications
Feng Huang,Zhang Lin,Wenwen Lin,Jiye Zhang,Kai Ding,Yonghao Wang,Qinghong Zheng,Zhibing Zhan,Fengbo Yan,Dagui Chen,Peiwen Lv,Xian Wang +11 more
TL;DR: Zinc oxide, a wide band-gap semiconductor, has shown extensive potential applications in high-efficiency semiconductor photoelectronic devices, semiconductor photocatalysis, and diluted magnetic semiconductors as discussed by the authors.
Journal ArticleDOI
Prototype electrochromic device and dye sensitized solar cell using spray deposited undoped and `Li' doped V2O5 thin film electrodes
M. Kovendhan,D. Paul Joseph,P. Manimuthu,A. Sendilkumar,S. N. Karthick,Sangaraju Sambasivam,K. Vijayarangamuthu,Hee-Je Kim,Byung Chun Choi,K. Asokan,C. Venkateswaran,R. Mohan +11 more
TL;DR: In this paper, Li doped V2O5 thin films were spray deposited at 450°C onto ITO substrates and structural analysis using X-ray diffraction and Raman spectroscopy revealed orthorhombic phase of the films, presence of VO2 peaks due to high deposition temperature is also evident from structural and optical characterization.
Journal ArticleDOI
Tailoring surface phase transition and magnetic behaviors in BiFeO3 via doping engineering
TL;DR: Detailed electron paramagnetic resonance (EPR) results demonstrate that the 3d dopant plays a paramount role in the surface phase transition, which provides an alternative route to tune the charge-spin interactions in multiferroic materials.
Journal ArticleDOI
XRD, SEM, XPS studies of Sb doped ZnO films and electrical properties of its based Schottky diodes
TL;DR: In this article, the authors presented both the morphological and structural characterizations of ZnO depending on the Sb doping and the electrical characterization of Schottky diodes grown on ITO substrates by sol gel dip coating method.
Journal ArticleDOI
Ni doping effect on electrical conductivity of ZnO nanocrystalline thin films
TL;DR: In this paper, the electrical conductivity behavior of undoped and Ni-doped ZnO nanocrystalline thin films prepared by spin-coating method was investigated as a function of temperature.
References
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Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Journal ArticleDOI
Donor impurity band exchange in dilute ferromagnetic oxides.
TL;DR: It is proposed thatferromagnetic exchange here, and in dilute ferromagnetic nitrides, is mediated by shallow donor electrons that form bound magnetic polarons, which overlap to create a spin-split impurity band.
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Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Atsushi Tsukazaki,Akira Ohtomo,Takeyoshi Onuma,M. Ohtani,Takayuki Makino,Masatomo Sumiya,Keita Ohtani,Shigefusa F. Chichibu,S. Fuke,Yusaburou Segawa,Hideo Ohno,Hideomi Koinuma,Masashi Kawasaki +12 more
TL;DR: In this paper, the authors used a new technique to fabricate p-type ZnO reproducibly, and showed high-quality undoped films with electron mobility exceeding that in the bulk.
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Thin films: unexpected magnetism in a dielectric oxide.
TL;DR: It is shown that thin films of hafnium dioxide (HfO2), an insulating oxide better known as a dielectric layer for nanoscale electronic devices, can be ferromagnetic even without doping.
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Anisotropic ferromagnetism in substituted zinc oxide.
TL;DR: Results are interpreted in terms of a spin-split donor impurity-band model, which can account for ferromagnetism in insulating or conducting high-k oxides with concentrations of magnetic ions that lie far below the percolation threshold.