scispace - formally typeset
Journal ArticleDOI

Performance Comparisons Between Carbon Nanotubes, Optical, and Cu for Future High-Performance On-Chip Interconnect Applications

Reads0
Chats0
TLDR
In this article, the authors compare the performance of optical and carbon nanotubes (CNT) interconnects and compare it with Cu/low-kappa wires for future high-performance integrated circuits.
Abstract
Optical interconnects and carbon nanotubes (CNTs) present promising options for replacing the existing Cu-based global/semiglobal (optics and CNT) and local (CNT) wires. We quantify the performance of these novel interconnects and compare it with Cu/low-kappa wires for future high-performance integrated circuits. We find that for a local wire, a CNT bundle exhibits a smaller latency than Cu for a given geometry. In addition, by leveraging the superior electromigration properties of CNT and optimizing its geometry, the latency advantage can be further amplified. For semiglobal and global wires, we compare both optical and CNT options with Cu in terms of latency, energy efficiency/power dissipation, and bandwidth density. The above trends are studied with technology node. In addition, for a future technology node, we compare the relationship between bandwidth density, power density, and latency, thus alluding to the latency and power penalty to achieve a given bandwidth density. Optical wires have the lowest latency and the highest possible bandwidth density using wavelength division multiplexing, whereas a CNT bundle has a lower latency than Cu. The power density comparison is highly switching activity (SA) dependent, with high SA favoring optics. At low SA, optics is only power efficient compared to CNT for a bandwidth density beyond a critical value. Finally, we also quantify the impact of improvement in optical and CNT technology on the above comparisons. A small monolithically integrated detector and modulator capacitance for optical interconnects (~10 fF) yields a superior power density and latency even at relatively lower SA (~20%) but at high bandwidth density. At lower bandwidth density and SA lower than 20%, an improvement in mean free path and packing density of CNT can render it most energy efficient.

read more

Citations
More filters
Journal ArticleDOI

Device Requirements for Optical Interconnects to Silicon Chips

TL;DR: The current performance and future demands of interconnects to and on silicon chips are examined and the requirements for optoelectronic and optical devices are project if optics is to solve the major problems of interConnects for future high-performance silicon chips.
Journal ArticleDOI

Optical interconnects to electronic chips

TL;DR: The progress toward and prospects for the penetration of optics all the way to the silicon chip are summarized.
Journal ArticleDOI

Performance Modeling for Single- and Multiwall Carbon Nanotubes as Signal and Power Interconnects in Gigascale Systems

TL;DR: In this paper, the performances of carbon nanotube (CNT) interconnects, both single and multiwall (SWNT and MWNT), are benchmarked against their copper counterparts at a realistic operating temperature (100degC).
Journal ArticleDOI

Direct bandgap germanium-on-silicon inferred from 5.7% 〈100〉 uniaxial tensile strain [Invited]

TL;DR: In this paper, the authors reported uniaxial tensile strains up to 5.7% along germanium wires on a silicon substrate, measured using Raman spectroscopy.
Journal ArticleDOI

Nanoelectromagnetics: Circuit and Electromagnetic Properties of Carbon Nanotubes

Chris Rutherglen, +1 more
- 20 Apr 2009 - 
TL;DR: This Review presents a discussion of the electromagnetic properties of nanoscale electrical conductors, which are quantum mechanical one-dimensional systems, and carbon nanotubes are the most technologically advanced example, and are discussed mainly in this paper.
References
More filters
Journal ArticleDOI

The mean free path of electrons in metals

TL;DR: The mean free path of electrons in metals has been studied in this paper, where the authors show that electrons follow a straight line along the path of the electron in the metal atom.
Journal ArticleDOI

Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External Surfaces

A. F. Mayadas, +1 more
- 15 Feb 1970 - 
TL;DR: In this paper, the total resistivity of a thin metal film is calculated from a model in which three types of electron scattering mechanisms are simultaneously operative: an isotropic background scattering (due to the combined effects of phonons and point defects), scattering due to a distribution of planar potentials (grain boundaries), and scattering by the external surfaces.
Journal ArticleDOI

High-field electrical transport in single-wall carbon nanotubes

TL;DR: The intrinsic high-field transport properties of metallic single-wall carbon nanotubes are measured using low-resistance electrical contacts and it is shown that the current-voltage characteristics can be explained by considering optical or zone-boundary phonon emission as the dominant scattering mechanism at high field.
Journal ArticleDOI

Physical modeling of spiral inductors on silicon

TL;DR: In this article, the authors present a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance in the spiral, substrate ohmic loss, and substrate capacitance.
Journal ArticleDOI

Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

TL;DR: The discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture.
Related Papers (5)