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Journal ArticleDOI

Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films

Xinglong Wu, +3 more
- 10 Apr 2001 - 
- Vol. 78, Iss: 16, pp 2285-2287
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TLDR
In this article, the authors examined the spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire and found that the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner the width, the larger the intensity.
Abstract
Photoluminescence and cathodoluminescence (CL) spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire were examined. It was found that the intensities of the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner the width, the larger the intensity. Experimental results and spectral analyses suggest that the mechanism responsible for the green (yellow) emission is the recombination of a delocalized electron close to the conduction band with a deeply trapped hole in the single ionized oxygen vacancy Vo+ (the single negatively charged interstitial oxygen ion Oi−) center in the particle.

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Citations
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Journal ArticleDOI

Tuning the luminescence and UV photosensing properties of ZnO nanorods by strategic aqueous chemical growth

TL;DR: In this paper, the photoluminescence properties of aqueous chemically grown (ACG) ZnO nanorods (NRs) were investigated by placing the substrate at different precursor column heights by exploiting a simple phenomenon of different amounts of dissolved O2 along the depth of a precursor solution with its surface exposed to air.
Journal ArticleDOI

An optical study of the D—D neutron irradiation-induced defects in Co- and Cu-doped ZnO wafers

TL;DR: In this article, room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped (1 × 1014, 5 × 1016, and 1 × 1017 cm−2) and Cu-Doped (5 × 101 6 cm− 2) ZnO wafers irradiated by D-D neutrons (fluence of 2.9 × 1010 cm −2) have been investigated.
Journal ArticleDOI

Effect of oxygen partial pressure on conductivity type of MgZnO nanocrystalline thin films prepared by metal-organic chemical vapor deposition

TL;DR: The properties of the MgZnO nanocrystalline thin films deposited on c-Al"2O"3 substrates by metal-organic chemical vapor deposition (MOCVD) at various oxygen partial pressures were thoroughly studied and it was found that the nanocrystals grown in the oxygen partial pressure range from 38 to 56Pa were all c-axis oriented.
Journal ArticleDOI

Formation of ZnO luminescent films on SiN films for light source of high-resolution optical microscope

TL;DR: In this paper, the authors fabricated ZnO/SiN films for use as a light source of a high-resolution optical microscope and characterized the properties of the films, and demonstrated images obtained with the microscope using the fabricated materials.
Journal ArticleDOI

Directed photoluminescent emission of ZnO tetrapods on biotemplated Al2O3

TL;DR: In this paper, a biomorphic Al 2 O 3 with microcellular morphology was produced by biotemplating of rattan and coating with ZnO tetrapods (T-ZnO).
References
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Journal ArticleDOI

Correlation between photoluminescence and oxygen vacancies in ZnO phosphors

TL;DR: By combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the green 510 nm emission, the free-carrier concentration, and the density of singly ionized oxygen vacancies in commercial ZnO phosphor powders as mentioned in this paper.
Journal ArticleDOI

Point defects and luminescence centres in zinc oxide and zinc oxide doped with manganese

TL;DR: The green and yellow luminescence centres in ZnO and Mn-doped ZnOs are investigated in this article, and it seems that a VZn · V0 divacancy exists, and that luminecence is due to interstitial zinc and oxygen.
Journal ArticleDOI

Luminescent Transitions Associated With Divalent Copper Impurities and the Green Emission from Semiconducting Zinc Oxide

TL;DR: In this paper, the role of deep acceptor states in electronic processes in covalent solids was investigated and it was found that the transition is an optical charge transfer between a highly shielded localized level of the copper impurity and a level which is strongly perturbed by the valence-band states of the crystal.
Journal ArticleDOI

Identification of the transition responsible for the visible emission in ZnO using quantum size effects

TL;DR: In this article, the emission properties of suspensions of nanocrystalline ZnO particles with different particle sizes were studied and a linear relationship between the energetic maxima of the two emission bands was found.
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