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Journal ArticleDOI

Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films

Xinglong Wu, +3 more
- 10 Apr 2001 - 
- Vol. 78, Iss: 16, pp 2285-2287
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TLDR
In this article, the authors examined the spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire and found that the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner the width, the larger the intensity.
Abstract
Photoluminescence and cathodoluminescence (CL) spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire were examined. It was found that the intensities of the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner the width, the larger the intensity. Experimental results and spectral analyses suggest that the mechanism responsible for the green (yellow) emission is the recombination of a delocalized electron close to the conduction band with a deeply trapped hole in the single ionized oxygen vacancy Vo+ (the single negatively charged interstitial oxygen ion Oi−) center in the particle.

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Citations
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Journal ArticleDOI

Effect of film thickness and annealing temperature on the structural and optical properties of ZnO thin films deposited on sapphire (0001) substrates by sol–gel

TL;DR: The effect of film thickness and annealing temperature on the structure and optical properties of sol-gel ZnO thin films on sapphire substrates were investigated by XRD, SEM, RT-PL as mentioned in this paper.
Journal ArticleDOI

Synthesis, characterization and luminescence properties of Y-doped and Tb-doped ZnO nanocrystals

TL;DR: In this article, a wet chemical route with calcination procedure was used to synthesize Y-doped and Tbdoped ZnO nanocrystals using Zn(NO3)2·6H2O, Y( NO3)3·6HO, Tb(NO)3 ·6HO and (NH4)2CO3 as starting materials.
Journal ArticleDOI

Effect of swift heavy ion irradiation on structure, optical, and gas sensing properties of SnO2 thin films

TL;DR: In this paper, the structural, optical, and gas sensing properties of SnO 2 thin films were evaluated with 75 MeV Ni + beam at fluences ranging from 1.5 to 3.1 eV.
Journal ArticleDOI

Luminescence of excitons in mesoscopic ZnO particles

TL;DR: In this article, the effects of surface states and defects on excitons in mesoscopic ZnO particles have been discussed based on the present results, and the decay times are ∼20 and ∼100ps for 369 and 374 nm, and ∼40 and ∼400 ps for 374 nm.
Journal ArticleDOI

Low temperature grown ZnO:Ga films with predominant c-axis orientation in wurtzite structure demonstrating high conductance, transmittance and photoluminescence

TL;DR: In this article, a Ga doped ZnO:Ga film with a dominant c-axis orientation in wurtzite structure with I〈002〉/I〈101〉 ∼ 40 in the XRD pattern was shown to possess a predominant caxis orientation with the most prominent presence of allowed Raman active A1 (LO) mode.
References
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Journal ArticleDOI

Correlation between photoluminescence and oxygen vacancies in ZnO phosphors

TL;DR: By combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the green 510 nm emission, the free-carrier concentration, and the density of singly ionized oxygen vacancies in commercial ZnO phosphor powders as mentioned in this paper.
Journal ArticleDOI

Point defects and luminescence centres in zinc oxide and zinc oxide doped with manganese

TL;DR: The green and yellow luminescence centres in ZnO and Mn-doped ZnOs are investigated in this article, and it seems that a VZn · V0 divacancy exists, and that luminecence is due to interstitial zinc and oxygen.
Journal ArticleDOI

Luminescent Transitions Associated With Divalent Copper Impurities and the Green Emission from Semiconducting Zinc Oxide

TL;DR: In this paper, the role of deep acceptor states in electronic processes in covalent solids was investigated and it was found that the transition is an optical charge transfer between a highly shielded localized level of the copper impurity and a level which is strongly perturbed by the valence-band states of the crystal.
Journal ArticleDOI

Identification of the transition responsible for the visible emission in ZnO using quantum size effects

TL;DR: In this article, the emission properties of suspensions of nanocrystalline ZnO particles with different particle sizes were studied and a linear relationship between the energetic maxima of the two emission bands was found.
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