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Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films
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In this article, the authors examined the spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire and found that the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner the width, the larger the intensity.Abstract:
Photoluminescence and cathodoluminescence (CL) spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire were examined. It was found that the intensities of the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner the width, the larger the intensity. Experimental results and spectral analyses suggest that the mechanism responsible for the green (yellow) emission is the recombination of a delocalized electron close to the conduction band with a deeply trapped hole in the single ionized oxygen vacancy Vo+ (the single negatively charged interstitial oxygen ion Oi−) center in the particle.read more
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References
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Journal ArticleDOI
Electronic wave functions in semiconductor clusters: experiment and theory
Journal ArticleDOI
Correlation between photoluminescence and oxygen vacancies in ZnO phosphors
TL;DR: By combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the green 510 nm emission, the free-carrier concentration, and the density of singly ionized oxygen vacancies in commercial ZnO phosphor powders as mentioned in this paper.
Journal ArticleDOI
Point defects and luminescence centres in zinc oxide and zinc oxide doped with manganese
TL;DR: The green and yellow luminescence centres in ZnO and Mn-doped ZnOs are investigated in this article, and it seems that a VZn · V0 divacancy exists, and that luminecence is due to interstitial zinc and oxygen.
Journal ArticleDOI
Luminescent Transitions Associated With Divalent Copper Impurities and the Green Emission from Semiconducting Zinc Oxide
TL;DR: In this paper, the role of deep acceptor states in electronic processes in covalent solids was investigated and it was found that the transition is an optical charge transfer between a highly shielded localized level of the copper impurity and a level which is strongly perturbed by the valence-band states of the crystal.
Journal ArticleDOI
Identification of the transition responsible for the visible emission in ZnO using quantum size effects
TL;DR: In this article, the emission properties of suspensions of nanocrystalline ZnO particles with different particle sizes were studied and a linear relationship between the energetic maxima of the two emission bands was found.
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