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Journal ArticleDOI

Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films

Xinglong Wu, +3 more
- 10 Apr 2001 - 
- Vol. 78, Iss: 16, pp 2285-2287
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TLDR
In this article, the authors examined the spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire and found that the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner the width, the larger the intensity.
Abstract
Photoluminescence and cathodoluminescence (CL) spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire were examined. It was found that the intensities of the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner the width, the larger the intensity. Experimental results and spectral analyses suggest that the mechanism responsible for the green (yellow) emission is the recombination of a delocalized electron close to the conduction band with a deeply trapped hole in the single ionized oxygen vacancy Vo+ (the single negatively charged interstitial oxygen ion Oi−) center in the particle.

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Citations
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TL;DR: In this article, the influence of five different proteins on the crystallization of ZnO was investigated and it was shown that the lower the isoelectric point of a protein, the more efficient is the adsorption of this protein at ZnOs.
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TL;DR: In this paper, six ZnO thin films were grown under different oxygen flow rates by electrochemical deposition onto commercial indium tin oxide substrates, and X-ray diffraction, optical absorption, and photoluminescence (PL) measurements were performed on all films.
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Enhanced native acceptor-related blue emission of ZnO thin films annealed in an oxygen ambient

TL;DR: In this article, the thermodynamic behavior of charged point defects in unintentionally-doped ZnO thin films was investigated, and the as-grown sample displayed two different types of blue-emission bands: one at ∼2.95 eV from native-donor zinc interstitial (Zni) and the other at ∼3.17eV from VZn vacancies (VZn).
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Spontaneous polarization induced electric field in zinc oxide nanowires and nanostars

TL;DR: In this article, the authors used electrostatic force microscopy in zinc oxide nanowires and nanostars grown by vapor-liquid-solid technique to detect spontaneous polarization and estimate the electric field from the change in interleave amplitude induced by the electrostatic forces.
References
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Journal ArticleDOI

Correlation between photoluminescence and oxygen vacancies in ZnO phosphors

TL;DR: By combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the green 510 nm emission, the free-carrier concentration, and the density of singly ionized oxygen vacancies in commercial ZnO phosphor powders as mentioned in this paper.
Journal ArticleDOI

Point defects and luminescence centres in zinc oxide and zinc oxide doped with manganese

TL;DR: The green and yellow luminescence centres in ZnO and Mn-doped ZnOs are investigated in this article, and it seems that a VZn · V0 divacancy exists, and that luminecence is due to interstitial zinc and oxygen.
Journal ArticleDOI

Luminescent Transitions Associated With Divalent Copper Impurities and the Green Emission from Semiconducting Zinc Oxide

TL;DR: In this paper, the role of deep acceptor states in electronic processes in covalent solids was investigated and it was found that the transition is an optical charge transfer between a highly shielded localized level of the copper impurity and a level which is strongly perturbed by the valence-band states of the crystal.
Journal ArticleDOI

Identification of the transition responsible for the visible emission in ZnO using quantum size effects

TL;DR: In this article, the emission properties of suspensions of nanocrystalline ZnO particles with different particle sizes were studied and a linear relationship between the energetic maxima of the two emission bands was found.
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