Proceedings ArticleDOI
SiGe BiCMOS Current Status and Future Trends in Europe
Pascal Chevalier,Wolfgang Liebl,Holger Rücker,Alexis Gauthier,Dirk Manger,Bernd Heinemann,G. Avenier,Josef Bock +7 more
- pp 64-71
TLDR
The state-of-the-art covering both the Si/SiGe HBTs and the CMOS nodes is shown and a focus on the ongoing European research activities through the presentation of the TARANTO project, whose main objective is to help developing nanoscale SiGe BiCMOS platforms.Abstract:
This paper reviews the advantages of SiGe BiCMOS technologies and their applications in the millimeterwave to terahertz domains. The state-of-the-art covering both the Si/SiGe HBTs and the CMOS nodes is shown. Future perspectives and related main challenges are discussed with a focus on the ongoing European research activities through the presentation of the TARANTO project, whose main objective is to help developing 600 GHz $\pmb{f}_{\mathbf{MAX}}$ nanoscale SiGe BiCMOS platforms.read more
Citations
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Proceedings ArticleDOI
A D-Band Radio-on-Glass Module for Spectrally-Efficient and Low-Cost Wireless Backhaul
Amit Singh,Mustafa Sayginer,Michael J. Holyoak,Joseph Weiner,John Kimionis,Mohamed Elkhouly,Yves Baeyens,Shahriar Shahramian +7 more
TL;DR: D-Band Radio-on-Glass modules combining two highly integrated SiGe BiCMOS transceivers (TRX) with a record low-loss glass interposer technology are presented, representing the first low-cost and highly integrated solution for spectrally efficient backhaul systems in D-Band.
Journal ArticleDOI
Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies
TL;DR: In this paper, the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxide-semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades is reviewed.
Journal ArticleDOI
Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors.
Mladen Božanić,Saurabh Sinha +1 more
TL;DR: This paper probes active terahertz circuits that have already been reported and that have the potential to be deployed in a re-engineered terAhertz radar sensor system and attempts to predict future directions in re-engineering of monolithic radar sensors.
Proceedings ArticleDOI
Device Architectures for High-speed SiGe HBTs
H. Rucker,B. Heinemann +1 more
TL;DR: This paper reviews recent developments in process technology of high-speed SiGe HBTs at IHP and two device concepts, one with selective epitaxial growth and one with non-selective epitaxials growth of the base, are analyzed with respect to their impact on radio frequency performance.
Journal ArticleDOI
A 210–284-GHz I–Q Receiver With On-Chip VCO and Divider Chain
Utku Alakusu,M. Sadegh Dadash,Stefan Shopov,Pascal Chevalier,Andreia Cathelin,Sorin P. Voinigescu +5 more
TL;DR: In this article, a 240 GHz direct conversion I-Q receiver with 74 GHz RF bandwidth is reported, which features a mixer-first architecture with fundamental local oscillator (LO)-frequency Gilbert-cell downconversion mixers, variable-gain baseband amplifiers, and a 240-GHz LO source.
References
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Proceedings ArticleDOI
Half-Terahertz SiGe BiCMOS technology
TL;DR: In this article, the integration of a new generation of high-speed SiGe HBTs with f T / f max of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm BiCMOS technology is discussed.
Journal ArticleDOI
A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f $_{T} $ /f $_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps
Holger Rucker,Bernd Heinemann,Wolfgang Winkler,R. Barth,J. Borngraber,Juergen Drews,G.G. Fischer,A. Fox,Thomas Grabolla,Ulrich Haak,Dieter Knoll,Falk Korndörfer,Andreas Mai,Steffen Marschmeyer,Peter Schley,Daniel Schmidt,J. Schmidt,Markus Andreas Schubert,K. Schulz,Bernd Tillack,Dirk Wolansky,Yuji Yamamoto +21 more
TL;DR: A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented and ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.
Proceedings ArticleDOI
A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f T / 370 GHz f MAX HBT and high-Q millimeter-wave passives
Pascal Chevalier,G. Avenier,G. Ribes,A. Montagne,E. Canderle,Didier Celi,N. Derrier,C. Deglise,Cedric Durand,Thomas Quemerais,M. Buczko,Daniel Gloria,O. Robin,Sébastien Petitdidier,Y. Campidelli,F. Abbate,Mickael Gros-Jean,L. Berthier,Jean-Damien Chapon,Francois Leverd,C. Jenny,C. Richard,Olivier Gourhant,C. De-Buttet,Remi Beneyton,Patrick Maury,S. Joblot,Laurent Favennec,M. Guillermet,P. Brun,K. Courouble,K. Haxaire,G. Imbert,E. Gourvest,J. Cossalter,O. Saxod,Clement Tavernier,F. Foussadier,B. Ramadout,R. Bianchini,C. Julien,D. Ney,Julien Rosa,Sebastien Haendler,Y. Carminati,B. Borot +45 more
TL;DR: In this paper, the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics is presented, which features Low Power (LP) and General Purpose (GP) CMOS devices and 0.45 µm2 6T-SRAM bit cell.
Proceedings ArticleDOI
SiGe HBT with fx/fmax of 505 GHz/720 GHz
Bernd Heinemann,Holger Rucker,R. Barth,F. Barwolf,J. Drews,Gunter Fischer,A. Fox,O. Fursenko,Thomas Grabolla,Frank Herzel,Jens Katzer,J. Korn,A. Kruger,P. Kulse,T. Lenke,Marco Lisker,Steffen Marschmeyer,A. Scheit,D. Schmidt,J. Schmidt,M. A. Schubert,Andreas Trusch,C. Wipf,D. Wolansky +23 more
TL;DR: An experimental SiGe HBT technology featuring fT/fmax/BVCEO = 505 GHz/720 GHz/1.6 V and a minimum CML ring oscillator gate delay of 1.34 ps is presented in this article.
Journal ArticleDOI
SiGe HBT Technology: Future Trends and TCAD-Based Roadmap
Michael Schroter,Tommy Rosenbaum,Pascal Chevalier,Bernd Heinemann,Sorin P. Voinigescu,Ed Preisler,Josef Bock,A. Mukherjee +7 more
TL;DR: It is hoped that the presented roadmap will be useful not only for foundries and equipment manufacturers but also for circuit and system designers enabling better predictions of the capability of SiGe–BiCMOS process technology for new millimeter-wave (mm-wave) and terahertz (THz) applications.
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