Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
TLDR
In this article, the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications are evaluated and compared.Abstract:
We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications. We examine their device structures and associated materials/process technologies and selectively review the recent experimental demonstrations of high voltage power devices and IC structures of these semiconductors. We discuss the technical obstacles that still need to be addressed and overcome before large-scale commercialization commences.read more
Citations
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Journal ArticleDOI
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
TL;DR: In this article, the performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors on Ga2O3 has been evaluated and shown to benefit from the larger critical electric field relative to either SiC or GaN.
Journal ArticleDOI
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges
Ajay Kumar Morya,Matthew C. Gardner,Bahareh Anvari,Liming Liu,Alejandro G. Yepes,Jesus Doval-Gandoy,Hamid A. Toliyat +6 more
TL;DR: The problems of high common mode currents and bearing and insulation damage, which are caused by high dv/dt, and the reliability of WBG devices are discussed.
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Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond
TL;DR: In this paper, the authors highlight recent advances in free-standing wide band-gap membranes, including GaN, SiC, ZnO, β-Ga2O3, and diamond and their applications.
Journal ArticleDOI
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
E. Chikoidze,Adel Fellous,Amador Pérez-Tomás,Guillaume Sauthier,Tamar Tchelidze,Cuong Ton-That,Tung Thanh Huynh,Matthew R. Phillips,Stephen A. O. Russell,Michael R. Jennings,Bruno Berini,François Jomard,Yves Dumont +12 more
TL;DR: In this paper, the authors present evidence of p-type conduction in the undoped WBG β-Ga2O3, which is consistent with findings from photoemission and cathodoluminescence spectroscopies.
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High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers
TL;DR: The current density near breakdown was not strongly dependent on contact circumference but did scale with contact area, indicating that the bulk current contribution was dominant.
References
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Deep-ultraviolet transparent conductive β-Ga2O3 thin films
TL;DR: In this article, β-Ga2O3 with an energy band gap of 4.9 eV was prepared on silica glass substrates by a pulsed-laser deposition method, and the resulting internal transmittance at the wavelength (248 nm) of the KrF excimer laser exceeded 50% for the 100-nm-thick film.
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Power semiconductor device figure of merit for high-frequency applications
TL;DR: In this paper, the authors derived the Baliga high-frequency figure of merit for power semiconductor devices operating in high frequency circuits and showed that significant performance improvement can be achieved by replacing silicon with gallium arsenide, silicon carbide, or semiconducting diamond.
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Recent progress in Ga2O3 power devices
Masataka Higashiwaki,Kohei Sasaki,Hisashi Murakami,Yoshinao Kumagai,Akinori Koukitu,Akito Kuramata,Takekazu Masui,Shigenobu Yamakoshi +7 more
TL;DR: In this article, a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices is presented, covering single-crystal bulk and wafer production, homoepitaxial thin film growth by molecular beam epitaxy and halide vapor phase epitaxy.