The 2020 magnetism roadmap
E. Y. Vedmedenko,Roland Kawakami,Denis D. Sheka,Pietro Gambardella,Andrei Kirilyuk,Atsufumi Hirohata,Ch. Binek,Oksana Chubykalo-Fesenko,Stefano Sanvito,Brian J. Kirby,Julie Grollier,Karin Everschor-Sitte,Tobias Kampfrath,Tobias Kampfrath,Chun-Yeol You,Andreas Berger +15 more
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TLDR
The very relevant advances in the field of magnetism research during the past years make yet another Magnetism Roadmap a very sensible and timely endeavour, and allow its authors and readers to take another broad-based, but concise look at the most significant developments in magnetism.Abstract:
Following the success and relevance of the 2014 and 2017 Magnetism Roadmap articles, this 2020 Magnetism Roadmap edition takes yet another timely look at newly relevant and highly active areas in magnetism research The overall layout of this article is hereby unchanged, given that it is very suitable to convey the most relevant aspects of today's magnetism research in a wide variety of sub-fields to a broad readership Again, a different group of experts has been selected, representing both the novelty of new research areas as well as the desire to incorporate different voices and viewpoints The latter is especially relevant for this type of article, in which one's field of expertise has to be accommodated on two printed pages only, so that personal selection preferences are naturally rather more visible than in other types of articles Most importantly, the very relevant advances in the field of magnetism research during the past years make yet another Magnetism Roadmap a very sensible and timely endeavour, and allow its authors and readers to take another broad-based, but concise look at the most significant developments in magnetism, their precise status, their challenges and their anticipated future developmentsread more
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Journal Article
Electrical switching of an antiferromagnet
TL;DR: Electrical writing is combined in solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics.
Journal Article
Opto-Valleytronic Spin Injection in Monolayer MoS 2 /Few-Layer Graphene Hybrid Spin Valves
Yunqiu Luo,Jinsong Xu,Tiancong Zhu,Guanzhong Wu,Elizabeth McCormick,Wenbo Zhan,Mahesh R. Neupane,Roland Kawakami +7 more
TL;DR: This Letter fabricate monolayer MoS2/few-layer graphene hybrid spin valves and demonstrates, for the first time, the opto-valleytronic spin injection across a TMD/graphene interface, which paves the way for multifunctional 2D spintronic devices for memory and logic applications.
Journal ArticleDOI
Temporal and spectral fingerprints of ultrafast all-coherent spin switching
S. Schlauderer,Christoph Lange,S. Baierl,Thomas Ebnet,C. P. Schmid,D. C. Valovcin,A. K. Zvezdin,Alexey Kimel,Rostislav Mikhaylovskiy,Rupert Huber +9 more
TL;DR: In this paper, the authors show that terahertz (1 THz = 10$12}$ Hz) electromagnetic pulses allow coherent navigation of spins over a potential barrier and reveal the corresponding temporal and spectral fingerprints.
Journal ArticleDOI
The Ultrafast Einstein-De Haas Effect
Christian Dornes,Yves Acremann,Matteo Savoini,M. Kubli,Martin J. Neugebauer,Elsa Abreu,Lucas Huber,Gabriel Lantz,C. A. F. Vaz,Henrik T. Lemke,Elisabeth M. Bothschafter,Michael Porer,Vincent Esposito,Laurenz Rettig,Laurenz Rettig,Michele Buzzi,Michele Buzzi,A. Alberca,Yoav William Windsor,Yoav William Windsor,Paul Beaud,Urs Staub,Diling Zhu,Sanghoon Song,James M. Glownia,Steven L. Johnson,Steven L. Johnson +26 more
TL;DR: In this article, it was shown that a large fraction of the angular momentum associated with the aligned electron spins in a ferromagnet can be converted to mechanical angular momentum by reversing the direction of magnetisation using an external magnetic field.
Journal ArticleDOI
Spintronic devices: a promising alternative to CMOS devices
TL;DR: A brief history, current status, and future prospectus of the spintronics field for a novice is introduced and a detailed description of various switching mechanisms to write the information in spintronic devices that have the capability to be used for processing-in-memory architecture in the immediate future is described.
References
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Journal ArticleDOI
Quantum Spin Hall Insulator State in HgTe Quantum Wells
Markus König,Steffen Wiedmann,Steffen Wiedmann,Christoph Brüne,Christoph Brüne,Andreas Roth,Andreas Roth,Hartmut Buhmann,Hartmut Buhmann,Laurens W. Molenkamp,Laurens W. Molenkamp,Xiao-Liang Qi,Xiao-Liang Qi,Shou-Cheng Zhang,Shou-Cheng Zhang +14 more
TL;DR: The quantum phase transition at the critical thickness, d = 6.3 nanometers, was independently determined from the magnetic field–induced insulator-to-metal transition, providing experimental evidence of the quantum spin Hall effect.
Journal ArticleDOI
Revival of the Magnetoelectric Effect
Abstract: Recent research activities on the linear magnetoelectric (ME) effect?induction of magnetization by an electric field or of polarization by a magnetic field?are reviewed. Beginning with a brief summary of the history of the ME effect since its prediction in 1894, the paper focuses on the present revival of the effect. Two major sources for 'large' ME effects are identified. (i) In composite materials the ME effect is generated as a product property of a magnetostrictive and a piezoelectric compound. A linear ME polarization is induced by a weak ac magnetic field oscillating in the presence of a strong dc bias field. The ME effect is large if the ME coefficient coupling the magnetic and electric fields is large. Experiments on sintered granular composites and on laminated layers of the constituents as well as theories on the interaction between the constituents are described. In the vicinity of electromechanical resonances a ME voltage coefficient of up to 90?V?cm?1?Oe?1 is achieved, which exceeds the ME response of single-phase compounds by 3?5 orders of magnitude. Microwave devices, sensors, transducers and heterogeneous read/write devices are among the suggested technical implementations of the composite ME effect. (ii) In multiferroics the internal magnetic and/or electric fields are enhanced by the presence of multiple long-range ordering. The ME effect is strong enough to trigger magnetic or electrical phase transitions. ME effects in multiferroics are thus 'large' if the corresponding contribution to the free energy is large. Clamped ME switching of electrical and magnetic domains, ferroelectric reorientation induced by applied magnetic fields and induction of ferromagnetic ordering in applied electric fields were observed. Mechanisms favouring multiferroicity are summarized, and multiferroics in reduced dimensions are discussed. In addition to composites and multiferroics, novel and exotic manifestations of ME behaviour are investigated. This includes (i) optical second harmonic generation as a tool to study magnetic, electrical and ME properties in one setup and with access to domain structures; (ii) ME effects in colossal magnetoresistive manganites, superconductors and phosphates of the LiMPO4 type; (iii) the concept of the toroidal moment as manifestation of a ME dipole moment; (iv) pronounced ME effects in photonic crystals with a possibility of electromagnetic unidirectionality. The review concludes with a summary and an outlook to the future development of magnetoelectrics research.
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Real-time computing without stable states: a new framework for neural computation based on perturbations
TL;DR: A new computational model for real-time computing on time-varying input that provides an alternative to paradigms based on Turing machines or attractor neural networks, based on principles of high-dimensional dynamical systems in combination with statistical learning theory and can be implemented on generic evolved or found recurrent circuitry.
Journal ArticleDOI
Design of ion-implanted MOSFET's with very small physical dimensions
TL;DR: This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/.
Quantum Spin Hall Insulator State in HgTe Quantum Wells
Markus König,Steffen Wiedmann,Steffen Wiedmann,Christoph Brüne,Christoph Brüne,Andreas Roth,Andreas Roth,Hartmut Buhmann,Hartmut Buhmann,Laurens W. Molenkamp,Laurens W. Molenkamp,Xiao-Liang Qi,Xiao-Liang Qi,Shou-Cheng Zhang,Shou-Cheng Zhang +14 more
TL;DR: In this article, the quantum spin Hall effect was observed in HgTe/(Hg,Cd)Te quantum wells with well width d 6.3 nanometers and the residual conductance was independent of sample width, indicating that it is caused by edge states.