Journal ArticleDOI
The work function of the elements and its periodicity
TLDR
In the data for the 63 elements, trends that occur simultaneously in both the columns and the rows of the periodic table are shown to be useful in predicting correct values and also for identifying questionable data.Abstract:
A new compilation, based on a literature search for the period 1969–1976, is made of experimental data on the work function. For these 44 elements, preferred values are selected on the basis of valid experimental conditions. Older values, which are widely accepted, are given for 19 other elements on which there is no recent literature, and are so identified. In the data for the 63 elements, trends that occur simultaneously in both the columns and the rows of the periodic table are shown to be useful in predicting correct values and also for identifying questionable data. Several illustrative examples are given, including verifications of predictions published in 1950.read more
Citations
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Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
Journal ArticleDOI
A review on highly ordered, vertically oriented TiO2 nanotube arrays: Fabrication, material properties, and solar energy applications
TL;DR: In this paper, the fabrication, properties, and solar energy applications of highly ordered TiO 2 nanotube arrays made by anodic oxidation of titanium in fluoride-based electrolytes are reviewed.
Journal ArticleDOI
Integrated Circuits Based on Bilayer MoS2 Transistors
Han Wang,Lili Yu,Yi-Hsien Lee,Yi-Hsien Lee,Yumeng Shi,Allen Hsu,Matthew L. Chin,Lain-Jong Li,Madan Dubey,Jing Kong,Tomas Palacios +10 more
TL;DR: This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology based on the semiconducting nature of molybdenum disulfide.
Journal ArticleDOI
High dielectric constant gate oxides for metal oxide Si transistors
TL;DR: In this article, a review of the development of high-k gate oxides such as hafnium oxide (HFO) and high-K oxides is presented, with the focus on the work function control in metal gate electrodes.
References
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Journal ArticleDOI
Vacuum thermionic work functions of polycrystalline Nb, Mo, Ta, W, Re, Os, and Ir.
TL;DR: Experimentally measured effective vacuum thermionic work functions are reported for well-outgassed polycrystalline surfaces of 70% (100)+20% (211)oriented niobium (419 eV), 70%(100)+ 20% (21)−oriented molybdenum (40−43 eV) as discussed by the authors.
Journal ArticleDOI
LEED studies of thorium adsorption on tungsten
TL;DR: The structural arrangement of thorium atoms adsorbed on a tungsten (100) surface has been investigated by means of low energy electron diffraction (LEED) techniques as mentioned in this paper.
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