Showing papers on "Quantum capacitance published in 2012"
TL;DR: In this article, the area-normalized capacitance of lightly N-doped activated graphene with similar porous structure was measured and a trend of upwards shifts of the Dirac Point with increasing N concentration was observed.
Abstract: Many researchers have used nitrogen (N) as a dopant and/or N-containing functional groups to enhance the capacitance of carbon electrodes of electrical double layer (EDL) capacitors. However, the physical mechanism(s) giving rise to the interfacial capacitance of the N-containing carbon electrodes is not well understood. Here, we show that the area-normalized capacitance of lightly N-doped activated graphene with similar porous structure increased from 6 μF cm−2 to 22 μF cm−2 with 0 at%, and 2.3 at% N-doping, respectively. The quantum capacitance of pristine single layer graphene and various N-doped graphene was measured and a trend of upwards shifts of the Dirac Point with increasing N concentration was observed. The increase in bulk capacitance with increasing N concentration, and the increase of the quantum capacitance in the N-doped monolayer graphene versus pristine monolayer graphene suggests that the increase in the EDL type of capacitance of many, if not all, N-doped carbon electrodes studied to date, is primarily due to the modification of the electronic structure of the graphene by the N dopant. It was further found that the quantum capacitance is closely related to the N dopant concentration and N-doping provides an effective way to increase the density of the states of monolayer graphene.
353 citations
TL;DR: The work function values of graphene under various metals are accurately measured for the first time through a detailed analysis of the capacitance-voltage characteristics of a metal-graphene-oxide-semiconductor (MGOS) capacitor structure.
Abstract: Although the work function of graphene under a given metal electrode is critical information for the realization of high-performance graphene-based electronic devices, relatively little relevant research has been carried out to date. In this work, the work function values of graphene under various metals are accurately measured for the first time through a detailed analysis of the capacitance–voltage (C–V) characteristics of a metal–graphene–oxide–semiconductor (MGOS) capacitor structure. In contrast to the high work function of exposed graphene of 4.89–5.16 eV, the work function of graphene under a metal electrode varies depending on the metal species. With a Cr/Au or Ni contact, the work function of graphene is pinned to that of the contacted metal, whereas with a Pd or Au contact the work function assumes a value of ∼4.62 eV regardless of the work function of the contact metal. A study of the gate voltage dependence on the contact resistance shows that the latter case provides lower contact resistance.
321 citations
TL;DR: In this article, a hot-electron graphene base transistor (GBT) is proposed for high-frequency operation, which can potentially allow terahertz operation, based on energy-band considerations.
Abstract: We present a novel graphene-based-device concept for a high-frequency operation: a hot-electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows terahertz operation. Based on energy-band considerations, we propose a specific material solution that is compatible with SiGe process lines.
157 citations
TL;DR: This study studied the ac conductance of a model quantum conductor and observed a counterintuitive behavior of a quantum origin: as the transmission of the single conducting mode decreases, the resistance of the quantum RC circuit remains constant while the capacitance oscillates.
Abstract: We review the first experiment on dynamic transport in a phase-coherent quantum conductor. In our discussion, we highlight the use of time-dependent transport as a means of gaining insight into charge relaxation on a mesoscopic scale. For this purpose, we studied the ac conductance of a model quantum conductor, i.e. the quantum RC circuit. Prior to our experimental work, Buttiker et al (1993 Phys. Lett. A 180 364–9) first worked on dynamic mesoscopic transport in the 1990s. They predicted that the mesoscopic RC circuit can be described by a quantum capacitance related to the density of states in the capacitor and a constant charge-relaxation resistance equal to half of the resistance quantum h/2e2, when a single mode is transmitted between the capacitance and a reservoir. By applying a microwave excitation to a gate located on top of a coherent submicronic quantum dot that is coupled to a reservoir, we validate this theoretical prediction on the ac conductance of the quantum RC circuit. Our study demonstrates that the ac conductance is directly related to the dwell time of electrons in the capacitor. Thereby, we observed a counterintuitive behavior of a quantum origin: as the transmission of the single conducting mode decreases, the resistance of the quantum RC circuit remains constant while the capacitance oscillates.
104 citations
TL;DR: In this article, a physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field effect transistor is presented.
Abstract: A physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field-effect transistor is presented. Taking into account the two-dimensional (2D) density-of-states of the atomic layer thick TMD and its impact on the quantum capacitance, a model for the surface potential is presented. Next, considering a drift-diffusion mechanism for the carrier transport along the monolayer TMD, an explicit expression for the drain current has been derived. The model has been benchmarked with a measured prototype transistor. Based on the proposed model, the device design window targeting low-power applications is discussed.
82 citations
TL;DR: In this paper, a physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field effect transistor (FET) was presented.
Abstract: A physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field-effect transistor (FET) is presented. Taking into account the 2D density-of-states of the atomic layer thick TMD and its impact on the quantum capacitance, a model for the surface potential is presented. Next, considering a drift-diffusion mechanism for the carrier transport along the monolayer TMD, an explicit expression for the drain current has been derived. The model has been benchmarked with a measured prototype transistor. Based on the proposed model, the device design window targeting low-power applications is discussed.
74 citations
TL;DR: In this article, a 500-nm graphene frequency doubler with a record 3 GHz bandwidth was demonstrated, exceeding the device transit frequency by 50%, a previously unobserved result in graphene, indicating that graphene multiplier devices might be useful beyond their transit frequency.
Abstract: We demonstrate a 500-nm graphene frequency doubler with a record 3-GHz bandwidth, exceeding the device transit frequency by 50%, a previously unobserved result in graphene, indicating that graphene multiplier devices might be useful beyond their transit frequency. The maximum conversion gain of graphene ambipolar frequency doublers is determined to approach a near lossless value in the quantum capacitance limit. In addition, the experimental performance of graphene transistor frequency detectors is demonstrated, showing responsivity of 25.2 μA/μW. The high-frequency performance of these gigahertz devices is enabled by top-gate device fabrication using synthesized graphene transferred onto low capacitance, atomically smooth quartz substrates, affording carrier mobilities as high as 5000 cm2/V ·s.
66 citations
TL;DR: The results show that sub-femtojoule per bit switching energies and peak-to-peak voltages less than 0.1 V are achievable in graphene-on-graphene optical modulators using the constraint of 3 dB extinction ratio and 3 dB insertion loss.
Abstract: The fundamental switching energy limitations for waveguide coupled graphene-on-graphene optical modulators are described. The minimum energy is calculated under the constraints of fixed insertion loss and extinction ratio. Analytical relations for the switching energy both for realistic structures and in the quantum capacitance limit are derived and compared with numerical simulations. The results show that sub-femtojoule per bit switching energies and peak-to-peak voltages less than 0.1 V are achievable in graphene-on-graphene optical modulators using the constraint of 3 dB extinction ratio and 3 dB insertion loss. The quantum-capacitance limited switching energy for a single TE-mode modulator geometry is found to be < 0.5 fJ/bit at λ = 1.55 μm, and the dependences of the minimum energy on the waveguide geometry, wavelength, and graphene location are investigated. The low switching energy is a result of the very strong optical absorption in graphene, and the extremely-small operating voltages needed as the device approaches the quantum capacitance regime.
58 citations
TL;DR: In this article, the authors investigated the forward transmission coefficient of TS-SWCNTBVs for different metallic fractions of the SWCNTs, with quantum effects treated appropriately, based on the modified equivalent lumped-element circuit model.
Abstract: Electromagnetic compatibility-oriented study is performed for accurately characterizing through silicon single-walled carbon nanotube bundle via (TS-SWCNTBV) array in this paper. Based on the modified equivalent lumped-element circuit model of a pair of TS-SWCNTBVs, its forward transmission coefficient, in comparison with copper- and tungsten-based TSVs, is investigated for different metallic fractions of the SWCNTs, with quantum effects treated appropriately. The 3-D transmission-line method (TLM) is further employed for studying mutual couplings in three, four, and nine TS-SWCNTBV arrays, respectively, where the effects of their geometrical and physical parameters on the effective capacitance and conductance are examined in detail. Also, transient coupling noises in different arrays excited by a clock signal, respectively, are predicted and compared, which are useful for the design of high density TS-SWCNTBV arrays with better signal transmission performance.
54 citations
TL;DR: In this paper, a measurement method using an LC-circuit provides high sensitivity to small capacitance changes and hence allows the observation of the quantum part of the capacitance in top-gated graphene sheets.
Abstract: We report capacitance measurements in top-gated graphene sheets as a function of charge carrier density. A measurement method using an LC-circuit provides high sensitivity to small capacitance changes and hence allows the observation of the quantum part of the capacitance. The extracted density of states has a finite value of 1◊10 17 m 2 eV 1 in the vicinity of the Dirac point, which is in contrast to the theoretical prediction for ideal graphene. We attribute this discrepancy to fluctuations of the electrostatic potential with a typical amplitude of 100meV in our device.
47 citations
TL;DR: The capacitance measured from a single nanowire device corresponds to ~140 μF cm(-2), exceeding previous reported values for metal-insulator-metal micro-capacitors and is more than one order of magnitude higher than what is predicted by classical electrostatics.
Abstract: Building entire multiple-component devices on single nanowires is a promising strategy for miniaturizing electronic applications. Here we demonstrate a single nanowire capacitor with a coaxial asymmetric Cu-Cu 2o-C structure, fabricated using a two-step chemical reaction and vapour deposition method. The capacitance measured from a single nanowire device corresponds to ~140 µF cm − 2 , exceeding previous reported values for metal-insulator-metal micro-capacitors and is more than one order of magnitude higher than what is predicted by classical electrostatics. Quantum mechanical calculations indicate that this unusually high capacitance may be attributed to a negative quantum capacitance of the dielectric-metal interface, enhanced significantly at the nanoscale.
Patent•
13 Apr 2012
TL;DR: An electrical device includes at least one graphene quantum capacitance varactor as discussed by the authors, where the graphene layer comprises an exposed surface opposite the dielectric layer, and the contact electrode formed on the graphene surface and making electrical contact with the graphene.
Abstract: An electrical device includes at least one graphene quantum capacitance varactor. In some examples, the graphene quantum capacitance varactor includes an insulator layer, a graphene layer disposed on the insulator layer, a dielectric layer disposed on the graphene layer, a gate electrode formed on the dielectric layer, and at least one contact electrode disposed on the graphene layer and making electrical contact with the graphene layer. In other examples, the graphene quantum capacitance varactor includes an insulator layer, a gate electrode recessed in the insulator layer, a dielectric layer formed on the gate electrode, a graphene layer formed on the dielectric layer, wherein the graphene layer comprises an exposed surface opposite the dielectric layer, and at least one contact electrode formed on the graphene layer and making electrical contact with the graphene layer.
TL;DR: This work reports on an experimental observation of Shubnikov-de Haas oscillations in quantum capacitance measurements, which originate from topological helical states, and demonstrates easy access to the surface states at relatively high temperatures up to 60 K.
Abstract: Topological insulators show unique properties resulting from massless, Dirac-like surface states that are protected by time-reversal symmetry. Theory predicts that the surface states exhibit a quantum spin Hall effect with counter-propagating electrons carrying opposite spins in the absence of an external magnetic field. However, to date, the revelation of these states through conventional transport measurements remains a significant challenge owing to the predominance of bulk carriers. Here, we report on an experimental observation of Shubnikov-de Haas oscillations in quantum capacitance measurements, which originate from topological helical states. Unlike the traditional transport approach, the quantum capacitance measurements are remarkably alleviated from bulk interference at high excitation frequencies, thus enabling a distinction between the surface and bulk. We also demonstrate easy access to the surface states at relatively high temperatures up to 60 K. Our approach may eventually facilitate an exciting exploration of exotic topological properties at room temperature.
TL;DR: In this paper, the ultimate behavior of the graphene transistor in the quantum capacitance limit was explored, and a negative differential resistance was predicted under certain conditions, with a maximum peak-to-valley-current ratio of 4.
Abstract: We explore the ultimate behavior of the graphene transistor in the quantum capacitance limit. The quantum capacitance formulation allows for an exactly solvable model, and the ideal assumptions provide an upper bound on performance, including peak currents of 1 mA/μm with mobilities as low as 2000 cm2/V s for channel length of 1 μm, as well as linearly increasing transconductance not observed in conventional transistors. A negative differential resistance is predicted under certain conditions, with a maximum peak-to-valley-current ratio of 4. Finally, the effects of oxide scaling are elucidated and the oxide capacitances required for quantum capacitance limited behavior are quantified.
TL;DR: In this paper, the electrical behavior of vias made by bundles of either single-walled or multiwalled carbon nanotubes (CNTs) is investigated, with particular focus on the behavior of electrical parameters versus temperature and frequency.
Abstract: This paper investigates the electrical behavior of vias made by bundles of either single-walled or multiwalled carbon nanotubes (CNTs). The electronic transport in the CNTs is modeled through the kinetic inductance, the quantum capacitance, and the electrical resistance, which depend on the equivalent number of the CNT conducting channels. The dependence of such a number on the CNT radius, chirality, and temperature is described by using the quasi-classical transport theory. Since for the common mode the effects of the intershell tunneling are negligible, the interaction between different shells is described by using the classical electromagnetic theory. A simple but accurate equivalent lumped model for vias made by CNT bundles is proposed. Vias of interest in nanoelectronic applications are here analyzed, with particular focus on the behavior of electrical parameters versus temperature and frequency.
TL;DR: This work introduces a self-aligned fabrication method for carbon nanotube RF transistors, which incorporate a T-shaped (mushroom-shaped) aluminum gate, with oxidized aluminum as the gate dielectric, and reveals the importance and potential of separated semiconducting nanotubes for various RF applications.
Abstract: Carbon nanotube RF transistors are predicted to offer good performance and high linearity when operated in the ballistic transport and quantum capacitance regime; however, realization of such trans...
TL;DR: In this article, the authors used a quantum capacitance detector (QCD) to estimate the residual quasiparticle density, and the noise equivalent power (NEP) was assessed to be 7.2×10−20W/Hz1/2 at the lowest signal power.
Abstract: Quasiparticle tunneling events are measured in real time using a quantum capacitance detector (QCD), allowing for the extraction of tunneling rates as a function of temperature and optical loading of radiation coming from a black body source filtered to 200 m. The measurements are used to corroborate the basic operating principles of the QCD. An estimate of the residual quasiparticle density is made, and the noise equivalent power (NEP) is assessed to be 7.2×10−20W/Hz1/2 at the lowest signal power of 9.2×10−20W. This NEP was higher than the photon noise by only a factor of 7 over a wide signal power range.
TL;DR: In this article, a general transmission line (TL) model for describing the propagation of electric signals along MWCNTs at microwave through terahertz frequencies that takes into account all these aspects is proposed.
Abstract: The electromagnetic behavior of multiwall carbon nanotubes (MWCNTs), in the frequency range where only intraband transitions are allowed, depends on the combinations of different aspects: the number of effective conducting channels of each shell, the electron tunneling between adjacent shells, and the electromagnetic interaction between shells and the environment. This paper proposes a general transmission-line (TL) model for describing the propagation of electric signals along MWCNTs at microwave through terahertz frequencies that takes into account all these aspects. The dependence of the number of conducting channels of the single shell on the shell chirality and radius is described in the framework of the quasi-classical transport theory. The description of the intershell tunneling effects on the longitudinal transport of the π-electrons is carried on the basis of the density matrix formalism and Liouville's equation. The electromagnetic coupling between the shells and ground plane is described in the frame of the classical TL theory. The intershell tunneling qualitatively changes the form of the TL equations through the tunneling inductance and capacitance operators, which have to be added, respectively, in series to the (kinetic and magnetic) inductance matrix and in parallel to the (quantum and electrical) capacitance matrix. For carbon nanotube (CNT) lengths greater than 500 nm, the norm of the tunneling inductance operator is greater than 60% of the norm of the total inductance in the frequency range from gigahertz to terahertz. The tunneling inductance is responsible for a considerable coupling between the shells and gives rise to strong spatial dispersion. The model has been used to analyze the eigenmodes of a double-wall CNT above a ground plane. The intershell tunneling gives arise to strong anomalous dispersion in antisymmetrical modes.
TL;DR: In this article, the diameter-dependent performance of Si and InAs nanowire metal-oxide-semiconductor field effect transistors (NW MOSFETs) was investigated by developing a gate capacitance model.
Abstract: We investigated the diameter-dependent performance of Si and InAs nanowire metal-oxide-semiconductor field-effect transistors (NW MOSFETs) by developing a gate capacitance model. A nonparabolic effective-mass approximation and a semiclassical ballistic transport model were used. The capacitance model helped interpret the different contributions of the capacitances, which were due to the inversion-layer centroid and density of states. As a result, the inversion-layer centroid was close to the surface with a shrinking diameter. In Si NWs, this effect increased the gate capacitance in a small diameter. On the other hand, in InAs NWs, the density of states could decrease the gate capacitance in a small diameter. In both NWs, the on-current drastically increased in diameter smaller than 5 nm mainly due to the increase in the gate capacitance. The diameter-dependent injection velocity reached a peak around 5 nm in both NWs. Our results could imply that the peak in the diameter-dependent injection velocity is a universal feature of NW MOSFETs. With respect to intrinsic gate delay, the highest injection velocity led to the best performance of Si NWs; however, this case was not accompanied with the best performance of InAs NWs.
TL;DR: In this paper, the operation of multi-finger graphene quantum capacitance varactors fabricated using a planarized local bottom gate electrode, HfO2 gate dielectric, and large-area graphene is described.
Abstract: The operation of multi-finger graphene quantum capacitance varactors fabricated using a planarized local bottom gate electrode, HfO2 gate dielectric, and large-area graphene is described. As a function of the gate bias, the devices show a room-temperature capacitance tuning range of 1.22–1 over a voltage range of ±2 V. An excellent theoretical fit of the temperature-dependent capacitance-voltage characteristics is obtained when random potential fluctuations with standard deviation of 65 mV are included. The results represent a first step in realizing graphene quantum capacitance varactors for wireless sensing applications.
TL;DR: The main emphasis is on electronic components, particularly transistors and radio-frequency applications, and a circuit theory model is used to predict the feasibility of CNT transmission lines and technical challenges that have to be solved before graphene transistors are suitable for mobile devices.
Abstract: This paper presents potential carbon nanoelectronic applications in battery-powered mobile devices such as mobile phones and laptop computers. Based on the physical behavior of carbon nanotubes (CNTs) and graphene and the specific requirements for portable consumer electronic devices, the main challenges and restrictions for the adoption of carbon-based components by the industry are presented. The main emphasis is on electronic components, particularly transistors and radio-frequency applications. A circuit theory model is used to predict the feasibility of CNT transmission lines, and technical challenges that have to be solved before graphene transistors are suitable for mobile devices are presented. The performance of graphene transistors is compared with the corresponding parameters of silicon. In addition, other potential carbon-based applications in mobile devices aside from transistors such as displays and memory elements are outlined briefly.
TL;DR: In this article, the effects of quantum capacitance in an N-polar GaN/AlGaN/GaN heterostructures were investigated by directly measuring quantum displacement of the electron wavefunction Δd.
Abstract: We investigate the effects of quantum capacitance in an N-polar GaN/AlGaN/GaN heterostructures by directly measuring quantum displacement of the electron wavefunction Δd. A comparison between electrically and microscopically measured thicknesses showed negative quantum displacement effects in the inverted high-electron-mobility-transistor (HEMT) structure. As a result of the quantum capacitance effects, a quantum displacement Δd of ~ -4nm was extracted from the measurements. Further analysis using 1-D self-consistent Schrodinger-Poisson solver has been done to validate the measured data. Our simulation results, including multiple-subband occupancy, explain the increasing capacitance in the measured C-V profile in N-polar GaN-based HEMTs.
TL;DR: In this paper, a physically based analytical model of quantum capacitance (C-Q) in a bilayer graphene nanoribbon (BGN) under the application of an external longitudinal static bias is presented.
Abstract: We address a physically based analytical model of quantum capacitance (C-Q) in a bilayer graphene nanoribbon (BGN) under the application of an external longitudinal static bias. We demonstrate that as the gap (Delta) about the Dirac point increases, a phenomenological population inversion of the carriers in the two sets of subbands occurs. This results in a periodic and composite oscillatory behavior in the C-Q with the channel potential, which also decreases with increase in Delta. We also study the quantum size effects on the C-Q, which signatures heavy spatial oscillations due to the occurrence of van Hove singularities in the total density-of-states function of both the sets of subbands. All the mathematical results as derived in this paper converge to the corresponding well-known solution of graphene under certain limiting conditions and this compatibility is an indirect test of our theoretical formalism. (C) 2012 Elsevier By. All rights reserved.
13 May 2012
TL;DR: In this paper, methods of extraction of interface trap level density in graphene field effect devices from the capacitance-voltage measurements are described and discussed, and the correlation with the graphene Fermi velocity extraction is shown.
Abstract: Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities and differences in interface trap extraction procedure in graphene and silicon field-effect structures are briefly discussed.
TL;DR: In this paper, a semi-analytical model for the capacitance-voltage characteristics of graphene nanoribbon field effect transistors (GNR-FETs), in the quantum capacitance limit, is presented.
01 Dec 2012
TL;DR: In this paper, the effect of gate capacitance on varying oxide thickness for silicon MOSFET and CNTFET was analyzed and it was shown that in the nanometre regime quantum capacitance plays a major role in deciding the gate capacity.
Abstract: Carbon nanotube based FET devices are getting more and more importance today because of their high channel mobility and improved gate capacitance versus voltage characteristics. In this paper we compare and analyse the effect of gate capacitance on varying oxide thickness for silicon MOSTFET and CNTFET. It is seen that in nanometre regime quantum capacitance plays the major role in deciding the gate capacitance of a CNTFET and we find a favourable characteristics of decreasing gate capacitance with the decrease in the oxide thickness which is not possible to get in silicon MOSFET.
01 Dec 2012
TL;DR: It is seen that in nanometre regime quantum capacitance plays the major role in deciding the gate capacitance of a CNTFET and a favourable characteristics of decreasing gate capacitors with the decrease in the oxide thickness are found.
Abstract: Carbon nanotube based FET devices are getting more and more importance today because of their high channel mobility and improved gate capacitance versus voltage characteristics In this paper we compare and analyse the effect of gate capacitance on varying oxide thickness for single gate MOSFET, double gate MOSFET and CNTFET It is seen that in nanometre regime quantum capacitance plays the major role in deciding the gate capacitance of a CNTFET and we find a favourable characteristics of decreasing gate capacitance with the decrease in the oxide thickness which is not possible to get in single gate silicon MOSFET and double gate MOSFET
01 Oct 2012
TL;DR: In this paper, scaling effects on gate capacitance of GNRFETs were investigated by means of a semi-analytical model and the influence of nanoribbon width, gateinsulator thickness and dielectric constant scaling on the capacitance was explored.
Abstract: Scaling effects on the gate capacitance of graphene nanoribbon field-effect transistors (GNRFETs) are studied by means of a semi-analytical model. The influence of nanoribbon width, gateinsulator thickness and dielectric constant scaling on the capacitance — voltage characteristics is explored. Gate capacitance has non-monotonic behavior with ripples for thin and high-k gate-insulators. However, beyond the quantum capacitance limit, the ripples are suppressed and smooth monotonic characteristics are obtained.
TL;DR: Experimental evidence of one-dimensional behavior of silicon (Si) nanowires (NWs) at low-temperature through both transfer (I(d)-V(G)) and capacitance-voltage characteristics is provided.
Abstract: This article provides experimental evidence of one-dimensional behavior of silicon (Si) nanowires (NWs) at low-temperature through both transfer (I(d)-V(G)) and capacitance-voltage characteristics. For the first time, operation of Si NWs in the quantum capacitance limit (QCL) is experimentally demonstrated and quantitatively analyzed. This is of relevance since working in the QCL may allow, e.g., tunneling field-effect transistors (TFETs) to achieve higher on-state currents (I(on)) and larger on-/off-state current ratios (I(on)/I(off)), thus addressing one of the most severe limitations of TFETs. Comparison of the experimental data with simulations finds excellent agreement using a simple capacitor model.
TL;DR: In this paper, an explicit expression of the conducting channels as function of diameter, temperature, doping, and supply voltage for both metallic and semiconducting carbon nanotubes is presented.
Abstract: Multiwall carbon nanotubes represent a low-dimensional material that could serve as building blocks for future carbon-based nanoelectronics. The understanding of the electromagnetic performances at radio frequency of these materials for use in nanointerconnects is strictly related to the analysis of their transport properties as function of the working conditions. In this paper, we present an explicit expression of the conducting channels as function of diameter, temperature, doping, and supply voltage for both metallic and semiconducting carbon nanotubes. The proposed formula is based on the Dirac cone approximation of the conducting band energy of graphene nearby the Fermi points, combined with the Landauer-Buttiker formalism. Simplified expressions are also obtained in case of large diameter nanotubes. We show that the conductance, kinetic inductance, and quantum capacitance of each carbon shell are strongly affected by those parameters, and, consequently, that the current distribution among the shells of a multiwall carbon nanotube at radio frequency could be optimized with the proper definition of the nanotube configuration versus the working conditions.