Carlo Bernard

TL;DR: In this article, the authors present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures, adopting a 'hands-on' approach, providing practical details and procedures as derived from literature and from the authors' experience, in order to enable the reader to reproduce the results.

TL;DR: The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates.

TL;DR: Large-area hexagonal boron nitride (h-BN) promises many new applications of two-dimensional materials, such as the protective packing of reactive surfaces or as membranes in liquids, but scalable production beyond exfoliation from bulk single crystals remained a major challenge.

TL;DR: This work demonstrates the epitaxial growth of nominal monolayer (ML) MoSe2 on h-BN/Rh(111) by molecular beam epitaxy, where theMoSe2/h-BN layer system can be transferred from the growth substrate onto SiO2, demonstrating that the electronic properties, such as the direct band gap and the effective mass of ML MoSe 2, are well preserved in MoSe-BN heterostructures.

TL;DR: In this paper, the surface segregation profile of an intermetallic compound becomes vertically and laterally modulated upon epitaxial growth of a single-layer hexagonal boron nitride nanomesh.