Showing papers by "David P. Norton published in 2008"

The Execution Premium: Linking Strategy to Operations for Competitive Advantage

Abstract: In a world of stiffening competition, business strategy is more crucial than ever. Yet most organizations struggle in this area--not with formulating strategy but with executing it, or putting their strategy into action. Owing to execution failures, companies realize just a fraction of the financial performance promised in their strategic plans. It doesn't have to be that way, maintain Robert Kaplan and David Norton in The Execution Premium. Building on their breakthrough works on strategy-focused organizations, the authors describe a multistage system that enables you to gain measurable benefits from your carefully formulated business strategy. This book shows you how to: Develop an effective strategy--with tools such as SWOT analysis, vision formulation, and strategic change agendas Plan execution of the strategy--through portfolios of strategic initiatives linked to strategy maps and Balanced Scorecards Put your strategy into action--by integrating operational tools such as process dashboards, rolling forecasts, and activity-based costing Test and update your strategy--using carefully designed management meetings to review operational and strategic data Drawing on extensive research and detailed case studies from a broad array of industries, The Execution Premium presents a systematic and proven framework for achieving the financial results promised by your strategy.

Mastering the management system.

Abstract: Companies have always found it hard to balance pressing operational concerns with long-term strategic priorities. The tension is critical: World-class processes won't lead to success without the right strategic direction, and the best strategy in the world will get nowhere without strong operations to execute it. In this article, Kaplan, of Harvard Business School, and Norton, founder and director of the Palladium Group, explain how to effectively manage both strategy and operations by linking them tightly in a closed-loop management system. The system comprises five stages, beginning with strategy development, which springs from a company's mission, vision, and value statements, and from an analysis of its strengths, weaknesses, and competitive environment. In the next stage, managers translate the strategy into objectives and initiatives with strategy maps, which organize objectives by themes, and balanced scorecards, which link objectives to performance metrics. Stage three involves creating an operational plan to accomplish the objectives and initiatives; it includes targeting process improvements and preparing sales, resource, and capacity plans and dynamic budgets. Managers then put plans into action, monitoring their effectiveness in stage four. They review operational, environmental, and competitive data; assess progress; and identify barriers to execution. In the final stage, they test the strategy, analyzing cost, profitability, and correlations between strategy and performance. If their underlying assumptions appear faulty, they update the strategy, beginning another loop. The authors present not only a comprehensive blueprint for successful strategy execution but also a managerial tool kit, illustrated with examples from HSBC Rail, Cigna Property and Casualty, and Store 24. The kit incorporates leading management experts' frameworks, outlining where they fit into the management cycle.

From Suspicion of Physical Child Abuse to Reporting: Primary Care Clinician Decision-Making

Abstract: OBJECTIVES. The goals were to determine how frequently primary care clinicians reported suspected physical child abuse, the levels of suspicion associated with reporting, and what factors influenced reporting to child protective services. METHODS. In this prospective observational study, 434 clinicians collected data on 15 003 child injury visits, including information about the injury, child, family, likelihood that the injury was caused by child abuse (5-point scale), and whether the injury was reported to child protective services. Data on 327 clinicians indicating some suspicion of child abuse for 1683 injuries were analyzed. RESULTS. Clinicians reported 95 (6%) of the 1683 patients to child protective services. Clinicians did not report 27% of injuries considered likely or very likely caused by child abuse and 76% of injuries considered possibly caused by child abuse. Reporting rates were increased if the clinician perceived the injury to be inconsistent with the history and if the patient was referred to the clinician for suspected child abuse. Patients who had an injury that was not a laceration, who had>1 family risk factor, who had a serious injury, who had a child risk factor other than an inconsistent injury, who were black, or who were unfamiliar to the clinician were more likely to be reported. Clinicians who had not reported all suspicious injuries during their career or who had lost families as patients because of previous reports were more likely to report suspicious injuries. CONCLUSIONS. Clinicians had some degree of suspicion that approximately 10% of the injuries they evaluated were caused by child abuse. Clinicians did not report all suspicious injuries to child protective services, even if the level of suspicion was high (likely or very likely caused by child abuse). Child, family, and injury characteristics and clinician previous experiences influenced decisions to report. Language: en

From Suspicion of Physical Child Abuse to Reporting : Primary Care Clinician Decision-Making. Commentary

Abstract: OBJECTIVES. The goals were to determine how frequently primary care clinicians reported suspected physical child abuse, the levels of suspicion associated with reporting, and what factors influenced reporting to child protective services. METHODS. In this prospective observational study, 434 clinicians collected data on 15 003 child injury visits, including information about the injury, child, family, likelihood that the injury was caused by child abuse (5-point scale), and whether the injury was reported to child protective services. Data on 327 clinicians indicating some suspicion of child abuse for 1683 injuries were analyzed. RESULTS. Clinicians reported 95 (6%) of the 1683 patients to child protective services. Clinicians did not report 27% of injuries considered likely or very likely caused by child abuse and 76% of injuries considered possibly caused by child abuse. Reporting rates were increased if the clinician perceived the injury to be inconsistent with the history and if the patient was referred to the clinician for suspected child abuse. Patients who had an injury that was not a laceration, who had >1 family risk factor, who had a serious injury, who had a child risk factor other than an inconsistent injury, who were black, or who were unfamiliar to the clinician were more likely to be reported. Clinicians who had not reported all suspicious injuries during their career or who had lost families as patients because of previous reports were more likely to report suspicious injuries. CONCLUSIONS. Clinicians had some degree of suspicion that ∼10% of the injuries they evaluated were caused by child abuse. Clinicians did not report all suspicious injuries to child protective services, even if the level of suspicion was high (likely or very likely caused by child abuse). Child, family, and injury characteristics and clinician previous experiences influenced decisions to report.

Structure and magnetism of cobalt-doped ZnO thin films

Abstract: The structure and magnetic properties of Co-doped ZnO films are discussed in relation to cobalt doping levels and growth conditions Films were deposited by pulsed-laser deposition (PLD) from ZnO targets containing cobalt concentrations from 0 to 30?at% The structure of the films is examined by x-ray diffraction (XRD) and transmission electron microscopy (TEM), and optical absorption is used to infer the substitution of cobalt inside the ZnO lattice Magnetic properties are characterized by superconducting quantum interference device (SQUID) magnetometry Films doped with cobalt concentrations of a few per cent appear to be composed of two magnetic components: a paramagnetic component and a low-field ferromagnetic component Films doped with 30% cobalt show a larger FM signature at room temperature with clear hysteretic shape, but films grown at low pressure are plagued by the precipitation of metallic cobalt nanoparticles within the lattice which can be easily detected by XRD These particles are well oriented with the ZnO crystal structure By increasing the base pressure of the vacuum chamber to pressures above 1?10?5?Torr, metallic cobalt precipitates are undetectable in XRD scans, whereas the films still show an FM signature of ~008??B/Co Depositions in the presence of oxygen background gas at 002?mTorr decreases the magnetization The decreased magnetization with oxygen suggests that the activation of ferromagnetism depends on defects, such as oxygen vacancies, created during growth Optical absorption measurements show a sequential increase in the Co+2 absorption peaks in these films, along with an almost linearly increasing bandgap with cobalt concentration suggesting a large solubility of cobalt in ZnO Bright-field TEM imaging and electron diffraction do not show signs of precipitation; however, dark-field imaging shows circular areas of varying contrast which could be associated with cobalt precipitation Therefore, the possibility that ferromagnetism results from secondary phases cannot be ruled out

High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

Abstract: High-performance amorphous (α−) InGaZnO-based thin film transistors (TFTs) were fabricated on flexible polyethylene terephthalate substrates coated with indium oxide (In2O3) films. The InGaZnO films were deposited by rf magnetron sputtering with the presence of O2 at room temperature. The n-type carrier concentration of InGaZnO film was ∼2×1017 cm−3. The bottom-gate-type TFTs with SiO2 or SiNx gate dielectric operated in enhancement mode with good electrical characteristics: saturation mobility 11.5 cm2 V−1 s−1 for SiO2 and 12.1 cm2 V−1 s−1 for SiNx gate dielectrics and drain current on-to-off ratio >105. TFTs with SiNx gate dielectric exhibited better performance than those with SiO2. This is attributed to the relatively high dielectric constant (i.e., high-k material) of SiNx. After more than 500 h aging time at room temperature, the saturation mobility of the TFTs with SiO2 gate dielectric was comparable to the as-fabricated value and the threshold voltage shift was 150 mV.

High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering

Abstract: Thin-film transistors (TFTs) based on amorphous indium gallium zinc oxide (a-IGZO) were fabricated by radio-frequency magnetron sputtering on glass substrates. The TFT device structure was a bottom-gate type, consisting of indium zinc oxide and HfO 2 as electrodes (gate, source, and drain) and gate dielectric, respectively. The resistivity of the a-IGZO channel layer was ∼1 Ω cm. TFTs with a 6 μm gate length and 100 μm gate width displayed a saturation mobility of ∼7.2 cm 2 V -1 s -1 , a threshold voltage of 0.44 V, a drain current on-off ratio of ∼10 5 , and subthreshold gate-voltage swing of ∼ 0.25 V decade -1 . After 1000 h aging time at room temperature, the saturation mobility remained almost constant while the threshold voltage shift was as small as 460 mV. The IGZO TFTs based on HfO 2 gate dielectrics sputtered near room temperature were found to be good candidates for applications on organic flexible substrates.

Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition

Abstract: ZnO-based light emitting diodes were fabricated on c-plane sapphire using ZnO:P∕Zn0.9Mg0.1O∕ZnO∕Zn0.9Mg0.1O∕ZnO:Ga p-i-n heterostructures. The p-i-n heterojunction diodes are rectifying and show light emission under forward bias. The electroluminescence spectra shows deep level emission at low bias, but near band edge ultraviolet emission at high voltage bias. A decrease in leakage currents in as-fabricated structures was achieved via low temperature oxygen annealing.

Synthesis and microstructure of vertically aligned ZnO nanowires grown by high-pressure-assisted pulsed-laser deposition

Abstract: The microstructure and growth behavior for vertically aligned Zinc oxide (ZnO) nanowires, synthesized on a ZnO thin film template by pulsed-laser deposition (PLD), is reported. The nanowire growth proceeds without any metal catalyst for nucleation, although an epitaxial ZnO thin film template is necessary in order to achieve uniform alignment. Nanowire growth at argon or oxygen background pressures of 500-mTorr results in nanowire diameters as small as 50–90 nm, with diameters largely determined by growth pressure and temperature. Room temperature photoluminescence show both near-band-edge and deep-level emission. The deep-level emission is believed caused by oxygen vancancies formed during growth.

Stable room temperature deposited amorphous InGaZnO4 thin film transistors

Abstract: Enhancement-mode amorphous indium gallium zinc oxide (α-IGZO) channel thin film transistors (TFTs) with a 6μm gate length and a 100μm gate width were fabricated on glass substrates by rf magnetron sputtering near room temperature. The resistivities of the α-IGZO films were controlled from 10−1to103Ωcm by varying the deposition power of 75–300W. The n-type carrier concentration in the channel was 6.5×1017cm−3. The gate oxide was 90-nm-thick SiNx, deposited by plasma enhanced chemical vapor deposition at 70°C. The bottom-gate TFTs had saturation mobility of ∼17cm2V−1s−1 and the drain current on-to-off ratio of ∼>105, a subthreshold gate-voltage swing of ∼0.5Vdecade−1, and a threshold voltage of 2.1V. In the TFT with a gate length of 6μm and a gate width of 100μm, the relative change of saturation mobility and threshold voltage was less than ±1.5% after 500h aging time at room temperature. This demonstrates that α-IGZO films are promising semiconductor materials for long-term-stable transparent TFT applications.

Ir/TaN as a bilayer diffusion barrier for advanced Cu interconnects

Abstract: The properties of an Ir (5nm)∕TaN (5nm) stacked layer as a copper diffusion barrier on Si have been investigated. Ir∕TaN bilayer barriers were prepared at room temperature by magnetron sputtering followed by in situ Cu deposition for diffusion tests. Thermal annealing of the barrier stacks was carried out in vacuum at high temperatures for 1h. X-ray diffraction patterns, cross sectional transmission electron microscopy images, and energy-dispersive spectrometer line scans on the samples annealed at 600°C revealed no Cu diffusion through the barrier. The results indicate that the Ir∕TaN bilayer is an effective diffusion barrier for copper metallization.

ZnO and Related Materials for Sensors and Light-Emitting Diodes

Abstract: ZnO is an attractive material for ultraviolet (UV) light emitters and detectors, and transparent thin-film transistors. It is also readily synthesized in the form of nanostructures. In this paper we discuss the fabrication of a number of ZnO thin-film and nanowire devices, including transistors, diodes, and UV and pH sensors. ZnO has been effectively used as a gas sensor material based on the near-surface modification of charge distribution with surface-absorbed species. The large surface area of the nanorods makes them attractive for gas and chemical sensing, and the ability to control their nucleation sites makes them candidates for high-density sensor arrays.

Dielectric passivation effects on ZnO light emitting diodes

Abstract: Plasma-enhanced chemical vapor-deposited SiO2 and SiNx were used to passivate ZnO heterojunction light emitting diodes (LEDs). Postdielectric deposition annealing was critical in obtaining good LED electrical and optical characteristics. No diode characteristics or light emission was observed unless the structures were annealed at 350°C after fabrication. Annealed diodes showed a band-edge electroluminescence (EL) (385nm) and a broad defect band with a peak at 930nm at room temperature. The SiO2 and SiNx had very different passivation effects in terms of the electrical and EL characteristics of the LEDs. After annealing, the SiO2 passivated ZnO LEDs showed diode I-V characteristics and emitted light. However, the annealed SiNx-passivated ZnO LEDs showed leaky diode characteristics and no light emission. We attribute these differences to the role of hydrogen on the LEDs.

Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape

Abstract: Amorphous (α-)InGaZnO4 thin film transistors (TFTs) were fabricated on polyimide clean-room tape at low temperature (<100 °C). The α-InGaZnO4 films with an n-type carrier concentration of ∼1016 cm−3 were deposited by rf-magnetron sputtering in a mixed ambient of Ar/O2. The bottom-gate-type TFTs showed good saturation mobility (∼5.3 cm2 V−1 s−1), drain current on-to-off ratio of approximately 105, threshold voltage of 1.1 V, and subthreshold gate-voltage swing of 0.55 V decade−1. These results were comparable to those of the same oxide TFTs that we have fabricated on either glass or polyethylene terephthalate substrates. The results demonstrate that even polyimide clean-room tape can be an appropriate substrate for inexpensive-flexible-adhesive-transparent electronic devices.

Carrier concentration dependence of Ti∕Au specific contact resistance on n-type amorphous indium zinc oxide thin films

Abstract: Ti(200A)∕Au(800A) Ohmic contacts to n-type amorphous indium zinc oxide (IZO) films with carrier concentrations of (1×1015)–(5×1020)cm−3 showed as-deposited specific contact resistances in the range of (3×10−1)–(1×10−4)Ωcm2. Postgrowth annealing from 200to500°C resulted in significant improvement in contact resistances due to increase of the carrier concentration in the near surface region of IZO layer, which can be attributed to the formation of Ti–O alloy phases that induce oxygen vacancies in the IZO. After annealing at 500°C, the lowest contact resistance of 8×10−6Ωcm2 was achieved in the sample with carrier concentration of 5×1020cm−3. Temperature dependent measurement showed that tunneling was dominant transport mechanism in the contacts on the most highly doped films (n∼5×1020cm−3) and thermionic emission on the most lightly doped films (n∼1×1015cm−3).

Ferromagnetism in pseudocubic BaFeO3 epitaxial films

Abstract: Growth and properties of epitaxial BaFeO3 thin films in the metastable cubic perovskite phase are examined. BaFeO3 films were grown on (012) LaAlO3 and (001) SrTiO3 single crystal substrates by pulsed-laser deposition. X-ray diffraction shows that films grown between 650 and 850°C yield an oxygen-deficient BaFeO2.5+x pseudocubic perovskite phase that decreases in lattice spacing with increasing growth temperature. Magnetization measurements on as-deposited BaFeO3 films indicate weakly ferromagnetic behavior. Annealing in 1atm oxygen ambient converts them into conductive and robustly ferromagnetic pseudocubic BaFeO3 phase with TC=235K. Observation of ferromagnetism with increasing oxygen content is consistent with superexchange coupling of Fe+4–O–Fe+4.

RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs

Abstract: Depletion-mode indium zinc oxide channel thin film transistors (TFTs) with gate dimension of 1 X 200 μm and drain-to-source distance of 2.5 μm were fabricated on glass substrates using radio frequency magnetron sputtering deposition at room temperature. Plasma-enhanced chemical vapor deposited SiN x was used as the gate insulator. The threshold voltage was around -2.5 V. Saturation current density at zero gate bias voltage was 2 mA/mm, and a maximum transconductance of 7.5 mS/mm was obtained at V ds = 3 V. The drain current on-to-off ratio was > 10 5 . The maximum field effect mobility measured in the saturation region was ∼ 14.5 cm 2 V -1 s -1 . A unity current gain cutoff frequency, f T , and maximum frequency of oscillation, f max of 180 and 155 MHz, respectively, were obtained. The equivalent device parameters were extracted by fitting the measured s parameters to obtain the intrinsic transconductance, drain resistance, drain-source resistance, transit time, and gate-drain and gate-source capacitance.

GaN, ZnO and InN nanowires and devices.

Abstract: A brief review is given of recent developments in wide bandgap semiconductor nanowire synthesis and devices fabricated on these nanostructures. There is strong interest in these devices for applications in UV detection, gas sensors and transparent electronics.

Effects of hydrogen on the optical properties of ZnCdO∕ZnO quantum wells grown by molecular beam epitaxy

Abstract: Temperature-dependent cw- and time-resolved photoluminescence (PL), as well as optically detected magnetic resonance (ODMR) measurements are employed to evaluate effects of deuterium (2H) doping on optical properties of ZnCdO∕ZnO quantum well structures grown by molecular beam epitaxy. It is shown that incorporation of H2 from a remote plasma causes a substantial improvement in radiative efficiency of the investigated structures. Based on transient PL measurements, the observed improvements are attributed to efficient passivation by hydrogen of competing nonradiative recombination centers via defects. This conclusion is confirmed from the ODMR studies.

Synthesis and characterization of single crystalline SnO2 nanorods by high-pressure pulsed laser deposition

Abstract: Tin oxide (SnO2) nanorods were grown by high-pressure pulsed laser deposition (PLD). The nanorods were grown without the use of a catalyst but required high background pressure growth in order to realize small grain columnar growth and nanorod formation, with nanorod formation most favored on non-epitaxial substrates. The structures and morphology were characterized by field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM). X-ray diffraction and HRTEM analysis indicate that the as-grown SnO2 nanorods are single crystals with a rutile structure. The nanorods are approximately 50–90 nm in diameters and 1.5 μm in length. This method provides an approach for large area synthesis of one dimensional SnO2 nanostructure materials.

Dominant factors limiting efficiency of optical spin detection in ZnO-based materials

Abstract: Two dominant factors limiting efficiency of optical spin detection in ZnO-based materials system are identified from time-resolved optical orientation and magneto-optical studies. The first is related to the fundamental band structure of the materials characterized by a weak spin-orbit interaction. It leads to cancellation of circular polarization from the optical transitions between the conduction band and the A and B valence band states, which would otherwise carry the desired information on spin polarization of carriers. The second limiting factor is shown to be efficient carrier/exciton spin relaxation, i.e., about 45–80ps.

Materials and Process Development for ZnMgO/ZnO Light-Emitting Diodes

Abstract: We report on the fabrication of UV LEDs based on a p-n junction p-ZnMgO/n-ZnO/n-ZnMgO double heterostructure. Pulsed-laser deposition was used to grow the complete heterostructure on c -plane sapphire templates. The LEDs were patterned by simple wet etching. Band-edge electroluminescence emission most likely associated with ZnO excitonic transitions was observed at room temperature. However, the devices show sensitivity to the presence of hydrogen in the measurement ambient due to formation of a surface conduction layer. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than AlGaN/GaN devices provided adequate surface passivation techniques are developed.

Annealing effects on electrical properties of MgZnO films grown by pulsed laser deposition

Abstract: Electrical properties and deep trap spectra are reported for MgZnO(P) films grown by pulsed laser deposition on undoped n-ZnO substrates. The as-grown films are n type with a “bulk” donor concentration of ∼1018cm−3 and have a compensated high resistivity layer near the surface. Deep trap spectra in these films are dominated by electron traps with an activation energy of 0.3eV, hole traps with an activation energy of 0.14eV, and some unidentified electron traps with a barrier for capture of electrons. After annealing in oxygen at 800°C the MgZnO(P) becomes p type, with the dominant hole traps having an activation energy of 0.2eV. The space charge region of the formed p-n junction is mainly located in the n-ZnO substrate. The main hole traps in this part of the heterojunction have activation energies of 0.14 and 0.84eV, while the main electron traps have activation energies of 0.15 and 0.3eV.

Generation of Nitrogen Acceptors in ZnO using Pulse Thermal Processing

Abstract: Bipolar doping in wide bandgap semiconductors is difficult to achieve under equilibrium conditions because of the spontaneous formation of compensating defects and unfavorable energetics for dopant substitution. In this work, we explored the use of rapid pulse thermal processing for activating nitrogen dopants into acceptor states in ZnO. Low-temperature photoluminescence spectra revealed both acceptor-bound exciton (AX0) and donor-acceptor pair emissions, which present direct evidence for acceptors generated after pulse thermal processing of nitrogen-doped ZnO. This work suggests that pulse thermal processing is potentially an effective method for p-type doping of ZnO.

Deposition of WNxCy Using the Allylimido Complexes Cl4 ( RCN ) W ( NC3H5 ) : Effect of NH3 on Film Properties

Abstract: A mixture of the tungsten allylimido complexes Cl 4 (RCN)W(NC 3 H 5 ) (la, R = CH 3 ; 1b, R = Ph) was used to deposit tungsten nitride carbide (WN x C y ) films with ammonia as coreactant. Depositions were done in a chemical vapor deposition reactor at temperatures in the range of 450-750°C. The effect of ammonia on film composition, crystallinity, lattice parameter, grain size, film growth rate, and electrical resistivity was studied. Importantly, films grown at 450°C with ammonia as a coreactant were amorphous and showed a roughly five-fold increase in nitrogen content and significantly reduced oxygen levels. The films deposited below 500°C were amorphous, whereas films deposited at and above 500°C were polycrystalline. The X-ray diffraction patterns suggest that either the solid solution β-WN x C y or β-WN 0.5 and β-WC 0.6 coexist in the films. An Arrhenius plot yielded an apparent activation energy of 0.34 eV for growth from la,b and ammonia, compared to the value of 0.15 eV reported for depositions without ammonia. As anticipated, the films deposited with ammonia exhibited higher film resistivity, with the lowest film resistivity of 1.7 mΩ cm observed for films grown at 550°C, compared to 0.29 mΩ cm for film grown without ammonia at 450°C.

Deposition of WNxCy for diffusion barrier application using the imido guanidinato complex W(NiPr)Cl3[PriNC(NMe2)NiPr]

Abstract: A solution of the tungsten imido guanidinato complex W(NPri)Cl3[PriNC(NMe2)NPri] (1) in benzonitrile was used to deposit tungsten nitride carbide (WNxCy) thin films by chemical vapor deposition in the temperature range of 400–750°C. Films grown with 1 were composed of W, N, C, and O as determined by Auger electron spectroscopy. X-ray photoelectron spectroscopy results indicated that no Cl impurity was present in the film. The apparent activation energy in the reaction limited growth regime was 0.54eV. The films deposited below 500°C were amorphous, while films deposited at and above 500°C were nanocrystalline (grain size <50A). The lowest resistivity of 0.98mΩcm was obtained for film deposited at 450°C. Films, 45–55nm thick, deposited at 450–500°C were able to prevent bulk Cu diffusion after vacuum annealing at 500°C for 30min. The properties of thin films deposited with 1 were compared to those from the isopropyl imido complex, Cl4(RCN)W(NPri) (2a, R=CH3, 2b, R=Ph), to provide insight into the effect of ...