J
Jun Fan
Researcher at Missouri University of Science and Technology
Publications - 505
Citations - 7033
Jun Fan is an academic researcher from Missouri University of Science and Technology. The author has contributed to research in topics: Printed circuit board & Equivalent circuit. The author has an hindex of 36, co-authored 482 publications receiving 5641 citations. Previous affiliations of Jun Fan include Ulsan National Institute of Science and Technology & University of Missouri.
Papers
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Book ChapterDOI
Cloud Computing: Efficient Congestion Control in Data Center Networks
Chi Harold Liu,Jian Shi,Jun Fan +2 more
TL;DR: This chapter proposes two sketch-based algorithms, namely “α-CU” and “P(d)-CU,” which are based on the existing conservative update (CU) approach and adds no extra implementation cost to the traditional CU, and also successfully trades off the achieved error with time complexity.
Journal ArticleDOI
A slope and amplitude controllable triangular-current generator for the injection of a broad-band PDN noise
TL;DR: In this paper, a triangular current generator was proposed to estimate the voltage noise in a PDN and estimate the amplitude and slope of the waveform manually depending upon the PDN impedance.
Proceedings ArticleDOI
Near-field H to E transformation using plane wave spectrum theory
Zhenwei Yu,Yaojiang Zhang,Soji Sajuyigbe,R. Camacho,Jason A. Mix,Kevin Slattery,Matthew Halligan,Jun Fan +7 more
TL;DR: In this paper, a method based on plane wave spectrum theory was proposed to perform the H to E transformation, and a filtering technique was used to address the noise problem in the calculation.
Proceedings ArticleDOI
Using TWDP to quantify channel performance with frequency-domain s-parameter data
TL;DR: This paper presents an approach to quantify channel performance using TWDP (transmitter waveform and dispersion penalty) with frequency-domain S-parameter data, obtained either from measurements or simulations.
Proceedings ArticleDOI
Extraction of the parameters of the coupling capacitance hysteresis cycle for TSV transient modeling
TL;DR: In this paper, the authors deal with the extraction, from the measurement, of the parameters needed to identify in time domain the hysteretic behavior of the coupling capacitance of through silicon via (TSV).