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Jun Fan

Researcher at Missouri University of Science and Technology

Publications -  505
Citations -  7033

Jun Fan is an academic researcher from Missouri University of Science and Technology. The author has contributed to research in topics: Printed circuit board & Equivalent circuit. The author has an hindex of 36, co-authored 482 publications receiving 5641 citations. Previous affiliations of Jun Fan include Ulsan National Institute of Science and Technology & University of Missouri.

Papers
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Book ChapterDOI

Cloud Computing: Efficient Congestion Control in Data Center Networks

TL;DR: This chapter proposes two sketch-based algorithms, namely “α-CU” and “P(d)-CU,” which are based on the existing conservative update (CU) approach and adds no extra implementation cost to the traditional CU, and also successfully trades off the achieved error with time complexity.
Journal ArticleDOI

A slope and amplitude controllable triangular-current generator for the injection of a broad-band PDN noise

TL;DR: In this paper, a triangular current generator was proposed to estimate the voltage noise in a PDN and estimate the amplitude and slope of the waveform manually depending upon the PDN impedance.
Proceedings ArticleDOI

Near-field H to E transformation using plane wave spectrum theory

TL;DR: In this paper, a method based on plane wave spectrum theory was proposed to perform the H to E transformation, and a filtering technique was used to address the noise problem in the calculation.
Proceedings ArticleDOI

Using TWDP to quantify channel performance with frequency-domain s-parameter data

TL;DR: This paper presents an approach to quantify channel performance using TWDP (transmitter waveform and dispersion penalty) with frequency-domain S-parameter data, obtained either from measurements or simulations.
Proceedings ArticleDOI

Extraction of the parameters of the coupling capacitance hysteresis cycle for TSV transient modeling

TL;DR: In this paper, the authors deal with the extraction, from the measurement, of the parameters needed to identify in time domain the hysteretic behavior of the coupling capacitance of through silicon via (TSV).