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Jun Fan

Researcher at Missouri University of Science and Technology

Publications -  505
Citations -  7033

Jun Fan is an academic researcher from Missouri University of Science and Technology. The author has contributed to research in topics: Printed circuit board & Equivalent circuit. The author has an hindex of 36, co-authored 482 publications receiving 5641 citations. Previous affiliations of Jun Fan include Ulsan National Institute of Science and Technology & University of Missouri.

Papers
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Proceedings ArticleDOI

Gassian Process Regression Analysis of Passive Intermodulation Level and DCR for Spring Contacts

TL;DR: In this paper, the feasibility of estimating the nonlinearity level of spring contacts using DC resistance (DCR) has been investigated, which has easier access to be tested with much lower cost.
Proceedings ArticleDOI

Top-layer inductance extraction for the pre-layout power integrity using the physics-based model size reduction (PMSR) method

TL;DR: In this article, a physics-based model size reduction (PMSR) method is applied to get the equivalent circuit model for the above-ground geometries, which can be used in analyzing the structure in its parts.
Proceedings ArticleDOI

Self-contact Introduced Passive Intermodulation Characterizations for Captured Springs

TL;DR: In this article, the captured RF springs that can introduce noticeable passive intermodulation (PIM) due to their structural self-contact phenomenon are characterized and validated using an integrated camera.
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Study of cross polarization of tapered slot antenna for EMC measurements

TL;DR: In this paper, full-wave analysis of E-field distribution of various slotlines is presented, which reveals that the bilateral tapered slot antenna has the widest impedance bandwidth and the lowest cross-polarization level simultaneously.
Proceedings ArticleDOI

Impact of Voltage Bias on Through Silicon Vias (TSV) depletion and crosstalk

TL;DR: In this paper, the circuit segmentation approach for the modeling of Through Silicon Vias (TSV) is extended to the presence of time domain non linear phenomena such as depletion and capacitance hysteresis.