Tsunenobu Kimoto

TL;DR: In this article, the features and present status of SiC power devices are briefly described, and several important aspects of the material science and device physics of the SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed.

TL;DR: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications is provided in this paper. But the authors focus on the SiC Schottky barrier diodes (SBDs) and do not provide an in-depth reference for scientists and engineers working in this field.

TL;DR: In this paper, a step-controlled epitaxial growth of silicon carbide (SiC) is proposed, which utilizes step-flow growth on off-oriented SiC{0001} substrates, and the detailed growth mechanism is discussed.

TL;DR: In this paper, deep level transient spectroscopy investigations on deep defect centers in 3C, 4H, and 6H SiC polytypes are reviewed and an emphasis is put on intrinsic defect centers observed in as-grown material and subsequent to ion implantation or electron irradiation as well as on defect centers caused by doping with or implantation of transition metals (vanadium, titanium, chromium, and scandium).

TL;DR: In this article, the capability of SiC power semiconductor devices, in particular JFET and Schottky barrier diodes (SBDs), for application in high-temperature power electronics was evaluated.